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肖特基二极管(Schottky Diode)
| Symbol |
Parameter |
中文 |
| VRRM |
Peak repetitive reverse voltage |
反向重复峰值电压 |
| VRWM |
Working peak reverse voltage |
方向工作峰值电压 |
| VR |
DC Blocking Voltage |
反向直流电压 |
| VR(RMS) |
RMS Reverse Voltage |
反向电压有效值 |
| IF(AV) |
Average Rectified Forward Current |
正向平均电流 |
| IR |
Reverse Current |
反向电流 |
| IFSM |
Non-Repetitive Peak Forward Surge Current |
正向浪涌电流 |
| VF |
Forward Voltage |
正向直流电压 |
| Cj |
Typical Junction Capactiance |
结电容 |
| PD |
Power Dissipation |
耗散功率 |
| Tj |
Operating Junction Temperature |
工作结温 |
| Tstg |
Storage Temperature Range |
存储温度 |
| Rth(j-a) |
Thermal Resistance from Junction to Ambient |
结到环境的热阻 |
Pin二极管(Pin Diode)
| Symbol |
Parameter |
中文 |
| VR |
Continuous reverse voltage |
反向直流电压 |
| IF |
Continuous forward current |
正向直流电流 |
| VF |
Forward voltage |
正向电压 |
| IR |
Reverse current |
反向电流 |
| Cd |
diode capacitance |
二极管电容 |
| rd |
diode forward resistance |
二极管正向电阻 |
| Ptot |
total power dissipation |
总的功率损耗 |
| Tj |
Junction Temperature |
结温 |
| Tstg |
storage temperature |
存储温度 |
TVS二极管(TVS Diode)
| Symbol |
Parameter |
中文 |
| IPP |
Maximum reverse peak pulse current |
峰值脉冲电流 |
| VC |
Clampling voltage |
钳位电压 |
| IR |
Maximum reverse leakage current |
最大反向漏电流 |
| VBR |
Breakdown voltage |
击穿电压 |
| VRWM |
Working peak reverse voltage |
反向工作峰值电压 |
| VF |
Forward voltage |
正向电压 |
| IF |
Forward current |
正向电流 |
| IT |
Test current |
测试电流 |
可控硅(SCR)
| Symbol |
Parameter |
中文 |
| VDRM |
Peak repetitive off-state voltage |
断态重复峰值电压 |
| VRRM |
Peak repetitive reverse voltage |
反向重复峰值电压 |
| IT(RMS) |
RMS On-state current |
额定通态电流 |
| ITSM |
Non repetitive surge peak on-state current |
通态非重复浪涌电流 |
| IGM |
Forward peak gate current |
控制极重复峰值电流 |
| VTM |
peak forward on-state voltage |
通态峰值电压 |
| IGT |
Gate trigger current |
控制极触发直流电流 |
| VGT |
Gate trigger voltage |
控制极出发电压 |
| IH |
Holding current |
维持电流 |
| IDRM |
Peak repetitive off-state current |
断态重复峰值电流 |
| IRRM |
Peak repetitive reverse current |
反向重复峰值电流 |
| PG(AV) |
Average gate power dissipation |
控制极平均功率 |
| Tj |
operating junction temperature range |
工作结温 |
| Tstg |
Tstg storage temperature range |
存储温度 |
三端稳压管(Three Terminal Voltage Regulator)
| Symbol |
Parameter |
中文 |
| VI |
input voltage |
输入电压 |
| Vo |
output voltage |
输出电压 |
| △Vo |
Load regulation |
输出调整率 |
| △Vo |
Line regulation |
输入调整率 |
| Iq |
quiescent current |
偏置电流 |
| △Iq |
quiescent current change |
偏置电流变化量 |
| VN |
Output noise voltage |
输出噪声电压 |
| RR |
Ripple rejection |
纹波抑制比 |
| Vd |
dropout voltage |
降落电压 |
| Isc |
short circuit current |
短路输出电流 |
| Ipk |
peak current |
峰值输出电流 |
| Topr |
operating junction temperature range |
结温 |
| Tstg |
storage temperature range |
存储温度 |
43系列稳压管(Adjustable Shunt Regulator)
| Symbol |
Parameter |
中文 |
| VKA |
Cathode voltage |
阴极电压 |
| IK |
Cathode current range(continous) |
阴极电流 |
| Iref |
Reference input current range,continous |
基准输入电流 |
| PD |
Power dissipation |
耗散功率 |
| Rth(j-a) |
Thermal resistance from junction to ambient |
结到环境的热阻 |
| Topr |
operating junction temperature range |
工作结温 |
| Tstg |
storage temperature range |
存储温度 |
| Vref |
Reference input voltage |
基准输入电压 |
| △Vref(dev) |
Deviation of reference input voltage over full temperature range |
全温度范围内基准输入电压的偏差 |
| △Vref/△VKA |
Ratio of change in reference input voltage to the change in cathode voltage |
基准输入电压变化量与阴极电压变化量的比 |
| △Iref(dev) |
Deviation of reference input current over full temperature range |
全温度范围内基准输入电流的偏差 |
| Imin |
Minimum cathode current for regulation |
稳压时最小负极电流 |
| Ioff |
Off-state cathode current |
关断状态阴极电流 |
| |ZKA| |
Dynamic impedance |
动态阻抗 |
普通晶体管(Transistor)
| Symbol |
Parameter |
中文 |
| VCBO |
Collector-Base voltage |
发射极开路,集电极-基极电压 |
| VCEO |
Collector-emitter voltage |
基极开路,集电极-发射极电压 |
| VEBO |
Emitter-base voltage |
集电极开路,发射极-基极电压 |
| IC |
Collector current |
集电极电流 |
| PC |
Collector power dissipation |
集电极耗散功率 |
| Tj |
Junction temperature |
结温 |
| Tstg |
storage temperature |
存储温度 |
| V(BR)CBO |
Collector-Base breakdown voltage |
发射极开路,集电极-基极反向电压 |
| V(BR)CEO |
Collector-emitter breakdown voltage |
基极开路,集电极-发射极反向电压 |
| V(BR)EBO |
Emitter-base breakdown voltage |
集电极开路,发射极-基极反向电压 |
| ICBO |
Collector cut-off current |
发射极开路,集电极-基极截止电流 |
| IEBO |
Emitter cut-off current |
集电极开路,发射极-基极截止电流 |
| ICEO |
Collector cut-off current |
基极开路,集电极-发射极截止电流 |
| hFE |
DC current gain |
共发射极正向电流传输比的静态值 |
| VCEsat |
Collector-emitter saturation voltage |
集电极-发射极饱和电压 |
| VBEsat |
Base-emitter saturation voltage |
基极-发射极饱和电压 |
| VBE |
Base-emitter voltage |
基极-发射极电压 |
| fT |
Transition frequency |
特征频率 |
| Cobo |
Collector output capacitance |
共基极输出电容 |
| Cibo |
Collector input capacitance |
共基极输入电容 |
| F |
Noise figure |
噪声系数 |
| ton |
Turn-on time |
开通时间 |
| toff |
Turn-off time |
关断时间 |
| tr |
Rise time |
上升时间 |
| ts |
Storage time |
存储时间 |
| tf |
Fall time |
下降时间 |
| td |
Delay time |
延迟时间 |
数字晶体管(Digital Transistor）
| Symbol |
Parameter |
中文 |
| VCC |
Supply voltage |
直流电压 |
| VIN |
input voltage |
输入电压 |
| IO |
output current |
输出电流 |
| PD |
Power dissipation |
功率损耗 |
| VI(off) |
Input-off voltage |
输入截止电压 |
| VI(on) |
Input-on voltage |
输入开启电压 |
| VO(on) |
output voltage |
输出电压 |
| II |
input current |
输入电流 |
| IO(off) |
output current |
输出截止电流 |
| GI |
DC current gain |
直流增益 |
| R1 |
Input resistance |
输入电阻 |
| R2/R1 |
Resistance ratio |
电阻率 |
| fT |
Transition frequency |
传输频率 |
| Tj |
junction temperature |
结温 |
| Tstg |
storage temperature range |
存储温度 |
| VCBO |
Collector-base voltage |
发射极开路,集电极-基极反向击穿电压 |
| VCEO |
Collector-emitter voltage |
基极开路,集电极-发射极反向击穿电压 |
| VEBO |
Emitter-base voltage |
集电极开路,发射极-基极反向击穿电压 |
场效应管(MOSFET)
| Symbol |
Parameter |
中文 |
| ID |
Continous drain current |
漏极直流电流 |
| VGS |
Gate-source voltage |
栅-源电压 |
| VDS |
Drain-source voltage |
漏-源电压 |
| EAS |
single pulse avalchane energy |
单脉冲雪崩击穿能量 |
| Rth(j-a) |
Thermal resistance from junction to ambient |
结到环境的热阻 |
| Rth(j-c) |
Thermal resistance from junction to case |
结到管壳的热阻 |
| V(BR)DSS |
Drain-source breakdown voltage |
漏源击穿电压 |
| V(GS)th |
Gate threshold voltage |
栅源阈值电压 |
| IGSS |
Gate-body leakage current |
漏-源短路的栅极电流 |
| IDSS |
Zero gate voltage drain curent |
栅-源短路的漏极电流 |
| rDS(on) |
Drain-source on-resistance |
漏源通态电阻 |
| gfs |
Forward transconductance |
跨导 |
| VSD |
Diode forward voltage |
漏源间体内反并联二极管正向压降 |
| Ciss |
Input capacitance |
栅-源电容 |
| Coss |
Output capacitance |
漏-源电容 |
| Crss |
Reverse transfer capacitance |
反向传输电容 |
| Rg |
Gate resistance |
栅极电阻 |
| td(on) |
Turn-on delay time |
开通延迟时间 |
| tr |
Rise time |
上升时间 |
| td(off) |
Turn-off delay time |
关断延迟时间 |
| tf |
Fall time |
下降时间 |
| IDM |
Pulsed drain current |
最大脉冲漏电流 |
| PD |
Power dissipation |
耗散功率 |
| Tj |
operating junction temperature range |
结温 |
| Tstg |
storage temperature range |
存储温度 |
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