BAV99series
High-speedswitchingdiodes
1.Productprofile
1.1Generaldescription
High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)
plasticpackages.
1.2Featuresandbenefits
1.3Applications
1.4Quickreferencedata
[1]WhenswitchedfromI
F
=10mAtoI
R
=10mA;R
L
=100Ω;measuredatI
R
=1mA.
Rev.8—18November2010Productdatasheet
Table1.Productoverview
TypenumberPackageConfigurationPackage
configuration
NXPJEITAJEDEC
BAV99SOT23-TO-236ABdualseriessmall
BAV99SSOT363SC-88-quadruple;2seriesverysmall
BAV99WSOT323SC-70-dualseriesverysmall
?Highswitchingspeed:t
rr
≤4ns?Lowcapacitance:C
d
≤1.5pF
?Lowleakagecurrent?Reversevoltage:V
R
≤100V
?SmallSMDplasticpackages?AEC-Q101qualified
?High-speedswitching?Reversepolarityprotection
?General-purposeswitching
Table2.Quickreferencedata
SymbolParameterConditionsMinTypMaxUnit
Perdiode
I
R
reversecurrentV
R
=80V--0.5μA
V
R
reversevoltage--100V
t
rr
reverserecoverytime
[1]
--4ns
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
2.Pinninginformation
3.Orderinginformation
4.Marking
[1]=placeholderformanufacturingsitecode
Table3.Pinning
PinDescriptionSimplifiedoutlineGraphicsymbol
BAV99;BAV99W
1anode(diode1)
2cathode(diode2)
3cathode(diode1),
anode(diode2)
BAV99S
1anode(diode1)
2cathode(diode2)
3cathode(diode3),
anode(diode4)
4anode(diode3)
5cathode(diode4)
6cathode(diode1),
anode(diode2)
006aaa144
12
3
006aaa763
12
3
132
456
006aab101
13
6
2
54
Table4.Orderinginformation
TypenumberPackage
NameDescriptionVersion
BAV99-plasticsurface-mountedpackage;3leadsSOT23
BAV99SSC-88plasticsurface-mountedpackage;6leadsSOT363
BAV99WSC-70plasticsurface-mountedpackage;3leadsSOT323
Table5.Markingcodes
TypenumberMarkingcode
[1]
BAV99A7
BAV99SK1
BAV99WA7
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20102of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
5.Limitingvalues
[1]Singlediodeloaded.
[2]Doublediodeloaded.
[3]T
j
=25°Cpriortosurge.
[4]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandard
footprint.
[5]Solderingpointsatpins2,3,5and6.
Table6.Limitingvalues
InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnit
Perdiode
V
RRM
repetitivepeakreverse
voltage
-10V
V
R
reversevoltage-100V
I
F
forwardcurrent
BAV99
[1]
-215mA
[2]
-125mA
BAV99S
[1]
-20mA
BAV99W
[1]
-150mA
[2]
-130mA
I
FRM
repetitivepeakforward
current
-50mA
I
FSM
non-repetitivepeak
forwardcurrent
squarewave
[3]
t
p
=1μs-4A
t
p
=1ms-1A
t
p
=1s-0.5A
P
tot
totalpowerdissipation
[1][4]
BAV99T
amb
≤25°C-250mW
BAV99ST
sp
≤85°C
[5]
-250m
BAV99WT
amb
≤25°C-2W
Perdevice
T
j
junctiontemperature-150°C
T
amb
ambienttemperature?65+150°C
T
stg
storagetemperature?65+150°C
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20103of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
6.Thermalcharacteristics
[1]Singlediodeloaded.
[2]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.
[3]Solderingpointsatpins2,3,5and6.
7.Characteristics
[1]WhenswitchedfromI
F
=10mAtoI
R
=10mA;R
L
=100Ω;measuredatI
R
=1mA.
[2]WhenswitchedfromI
F
=10mA;t
r
=20ns.
Table7.Thermalcharacteristics
SymbolParameterConditionsMinTypMaxUnit
R
th(j-a)
thermalresistancefrom
junctiontoambient
infreeair
[1][2]
BAV99--500K/W
BAV99W--625K/W
R
th(j-sp)
thermalresistancefrom
junctiontosolderpoint
BAV99--360K/W
BAV99S
[3]
--260K/W
BAV99W--300K/W
Table8.Characteristics
T
amb
=25°Cunlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnit
Perdiode
V
F
forwardvoltageI
F
=1mA--715mV
I
F
=10mA--855mV
I
F
=50mA--1V
I
F
=150mA--1.25V
I
R
reversecurrentV
R
=25V--30nA
V
R
=80V--0.5μA
V
R
=25V;T
j
=150°C--30μA
V
R
=80V;T
j
=150°C--50μA
C
d
diodecapacitancef=1MHz;V
R
=0V--1.5pF
t
rr
reverserecoverytime
[1]
--4ns
V
FR
forwardrecoveryvoltage
[2]
--1.75V
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20104of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
(1)T
amb
=150°C
(2)T
amb
=85°C
(3)T
amb
=25°C
(4)T
amb
=?40°C
(1)T
amb
=150°C
(2)T
amb
=85°C
(3)T
amb
=25°C
(4)T
amb
=?40°C
Fig1.Forwardcurrentasafunctionofforward
voltage;typicalvalues
Fig2.Reversecurrentasafunctionofreverse
voltage;typicalvalues
f=1MHz;T
amb
=25°CBasedonsquarewavecurrents.
T
j
=25°C;priortosurge
Fig3.Diodecapacitanceasafunctionofreverse
voltage;typicalvalues
Fig4.Non-repetitivepeakforwardcurrentasa
functionofpulseduration;maximumvalues
006aab132
1
10
10
2
10
3
I
F
(mA)
10
?1
V
F
(V)
01.41.00.40.80.21.20.6
(1)(2)(3)(4)
006aab133
10
2
I
R
(μA)
V
R
(V)
010080406020
10
1
10
?1
10
?2
10
?3
10
?4
10
?5
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF
)
mbg704
10
1
10
2
I
FSM
(A)
10
?1
t
p
(μs)
110
4
10
3
1010
2
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20105of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
8.Testinformation
8.1Qualityinformation
ThisproducthasbeenqualifiedinaccordancewiththeAutomotiveElectronicsCouncil
(AEC)standardQ101-Stresstestqualificationfordiscretesemiconductors,andis
suitableforuseinautomotiveapplications.
(1)I
R
=1mA
Inputsignal:reversepulserisetimet
r
=0.6ns;reversevoltagepulsedurationt
p
=100ns;dutycycleδ=0.05
Oscilloscope:risetimet
r
=0.35ns
Fig5.Reverserecoverytimetestcircuitandwaveforms
Inputsignal:forwardpulserisetimet
r
=20ns;forwardcurrentpulsedurationt
p
≥100ns;dutycycleδ≤0.005
Fig6.Forwardrecoveryvoltagetestcircuitandwaveforms
t
rr
(1)
+I
F
t
outputsignal
t
r
t
p
t
10%
90%
V
R
inputsignal
V=V
R
+
I
F
×
R
S
R
S
=50Ω
I
F
D.U.T.
R
i
=50Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10%
90%
I
inputsignal
R
S
=50Ω
I
R
i
=50Ω
OSCILLOSCOPE
1kΩ450Ω
D.U.T.
mga882
V
FR
t
outputsignal
V
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20106of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
9.Packageoutline
10.Packinginformation
[1]Forfurtherinformationandtheavailabilityofpackingmethods,seeSection14.
Fig7.PackageoutlineBAV99(SOT23/TO-236AB)Fig8.PackageoutlineBAV99S(SOT363/SC-88)
Fig9.PackageoutlineBAV99W(SOT323/SC-70)
04-11-04Dimensionsinmm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
06-03-16Dimensionsinmm
0.25
0.10
0.3
0.2
pin1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
04-11-04Dimensionsinmm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
Table9.Packingmethods
Theindicated-xxxarethelastthreedigitsofthe12NCorderingcode.
[1]
TypenumberPackageDescriptionPackingquantity
300010000
BAV99SOT234mmpitch,8mmtapeandreel-215-235
BAV99SSOT3634mmpitch,8mmtapeandreel;T1
[2]
-115-135
4mmpitch,8mmtapeandreel;T2
[3]
-125-165
BAV99WSOT3234mmpitch,8mmtapeandreel-115-135
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20107of14
[2]T1:normaltaping
[3]T2:reversetaping
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
11.Soldering
Fig10.ReflowsolderingfootprintBAV99(SOT23/TO-236AB)
Fig11.WavesolderingfootprintBAV99(SOT23/TO-236AB)
solderlands
solderresist
occupiedarea
solderpaste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensionsinmm
solderlands
solderresist
occupiedarea
preferredtransportdirectionduringsoldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensionsinmm
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20108of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
Fig12.ReflowsolderingfootprintBAV99S(SOT363/SC-88)
Fig13.WavesolderingfootprintBAV99S(SOT363/SC-88)
solderlands
solderresist
occupiedarea
solderpaste
sot363_fr
2.65
2.350.4(2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensionsinmm
sot363_fw
solderlands
solderresist
occupiedarea
preferredtransport
directionduringsoldering
5.3
1.31.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensionsinmm
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November20109of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
Fig14.ReflowsolderingfootprintBAV99W(SOT323/SC-70)
Fig15.WavesolderingfootprintBAV99W(SOT323/SC-70)
solderlands
solderresist
occupiedarea
solderpaste
sot323_fr
2.65
2.35
0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensionsinmm
sot323_fw
3.652.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solderlands
solderresist
occupiedarea
preferredtransport
directionduringsoldering
Dimensionsinmm
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November201010of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
12.Revisionhistory
Table10.Revisionhistory
DocumentIDReleasedateDatasheetstatusChangenoticeSupersedes
BAV99_SER_820101118Productdatasheet-BAV99_SER_7
Modifications:?Section4“Marking”:markingplaceholderexplanationintablefooterupdated
?Section5“Limitingvalues”:P
tot
conditionforBAV99Scorrected
?Section13“Legalinformation”:updated
BAV99_SER_720100414Productdatasheet-BAV99_SER_6
BAV99_SER_620100310Productdatasheet-BAV99_SER_5
BAV99_SER_520080820Productdatasheet-BAV99_4
BAV99S_3
BAV99W_4
BAV99_420011015Productspecification-BAV99_3
BAV99S_320010514Productspecification-BAV99S_N_2
BAV99W_419990511Productspecification-BAV99W_3
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November201011of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
13.Legalinformation
13.1Datasheetstatus
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm‘shortdatasheet’isexplainedinsection“Definitions”.
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus
informationisavailableontheInternetatURLhttp://www.nxp.com.
13.2Definitions
Draft—Thedocumentisadraftversiononly.Thecontentisstillunder
internalreviewandsubjecttoformalapproval,whichmayresultin
modificationsoradditions.NXPSemiconductorsdoesnotgiveany
representationsorwarrantiesastotheaccuracyorcompletenessof
informationincludedhereinandshallhavenoliabilityfortheconsequencesof
useofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheet
withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended
forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand
fullinformation.Fordetailedandfullinformationseetherelevantfulldata
sheet,whichisavailableonrequestviathelocalNXPSemiconductorssales
office.Incaseofanyinconsistencyorconflictwiththeshortdatasheet,the
fulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProduct
datasheetshalldefinethespecificationoftheproductasagreedbetween
NXPSemiconductorsanditscustomer,unlessNXPSemiconductorsand
customerhaveexplicitlyagreedotherwiseinwriting.Innoeventhowever,
shallanagreementbevalidinwhichtheNXPSemiconductorsproductis
deemedtoofferfunctionsandqualitiesbeyondthosedescribedinthe
Productdatasheet.
13.3Disclaimers
Limitedwarrantyandliability—Informationinthisdocumentisbelievedto
beaccurateandreliable.However,NXPSemiconductorsdoesnotgiveany
representationsorwarranties,expressedorimplied,astotheaccuracyor
completenessofsuchinformationandshallhavenoliabilityforthe
consequencesofuseofsuchinformation.
InnoeventshallNXPSemiconductorsbeliableforanyindirect,incidental,
punitive,specialorconsequentialdamages(including-withoutlimitation-lost
profits,lostsavings,businessinterruption,costsrelatedtotheremovalor
replacementofanyproductsorreworkcharges)whetherornotsuch
damagesarebasedontort(includingnegligence),warranty,breachof
contractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreason
whatsoever,NXPSemiconductors’aggregateandcumulativeliabilitytowards
customerfortheproductsdescribedhereinshallbelimitedinaccordance
withtheTermsandconditionsofcommercialsaleofNXPSemiconductors.
Righttomakechanges—NXPSemiconductorsreservestherighttomake
changestoinformationpublishedinthisdocument,includingwithout
limitationspecificationsandproductdescriptions,atanytimeandwithout
notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior
tothepublicationhereof.
malfunctionofanNXPSemiconductorsproductcanreasonablybeexpected
toresultinpersonalinjury,deathorseverepropertyorenvironmental
damage.NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseof
NXPSemiconductorsproductsinsuchequipmentorapplicationsand
thereforesuchinclusionand/oruseisatthecustomer’sownrisk.
Applications—Applicationsthataredescribedhereinforanyofthese
productsareforillustrativepurposesonly.NXPSemiconductorsmakesno
representationorwarrantythatsuchapplicationswillbesuitableforthe
specifiedusewithoutfurthertestingormodification.
Customersareresponsibleforthedesignandoperationoftheirapplications
andproductsusingNXPSemiconductorsproducts,andNXPSemiconductors
acceptsnoliabilityforanyassistancewithapplicationsorcustomerproduct
design.Itiscustomer’ssoleresponsibilitytodeterminewhethertheNXP
Semiconductorsproductissuitableandfitforthecustomer’sapplicationsand
productsplanned,aswellasfortheplannedapplicationanduseof
customer’sthirdpartycustomer(s).Customersshouldprovideappropriate
designandoperatingsafeguardstominimizetherisksassociatedwiththeir
applicationsandproducts.
NXPSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,
damage,costsorproblemwhichisbasedonanyweaknessordefaultinthe
customer’sapplicationsorproducts,ortheapplicationorusebycustomer’s
thirdpartycustomer(s).Customerisresponsiblefordoingallnecessary
testingforthecustomer’sapplicationsandproductsusingNXP
Semiconductorsproductsinordertoavoidadefaultoftheapplicationsand
theproductsoroftheapplicationorusebycustomer’sthirdparty
customer(s).NXPdoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedin
theAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanent
damagetothedevice.Limitingvaluesarestressratingsonlyand(proper)
operationofthedeviceattheseoranyotherconditionsabovethosegivenin
theRecommendedoperatingconditionssection(ifpresent)orthe
Characteristicssectionsofthisdocumentisnotwarranted.Constantor
repeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffect
thequalityandreliabilityofthedevice.
Termsandconditionsofcommercialsale—NXPSemiconductors
productsaresoldsubjecttothegeneraltermsandconditionsofcommercial
sale,aspublishedathttp://www.nxp.com/profile/terms,unlessotherwise
agreedinavalidwrittenindividualagreement.Incaseanindividual
agreementisconcludedonlythetermsandconditionsoftherespective
agreementshallapply.NXPSemiconductorsherebyexpresslyobjectsto
applyingthecustomer’sgeneraltermsandconditionswithregardtothe
purchaseofNXPSemiconductorsproductsbycustomer.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedor
construedasanoffertosellproductsthatisopenforacceptanceorthegrant,
conveyanceorimplicationofanylicenseunderanycopyrights,patentsor
otherindustrialorintellectualpropertyrights.
Documentstatus
[1][2]
Productstatus
[3]
Definition
Objective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November201012of14
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,
authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalor
safety-criticalsystemsorequipment,norinapplicationswherefailureor
Exportcontrol—Thisdocumentaswellastheitem(s)describedherein
maybesubjecttoexportcontrolregulations.Exportmightrequireaprior
authorizationfromnationalauthorities.
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
Quickreferencedata—TheQuickreferencedataisanextractofthe
productdatagivenintheLimitingvaluesandCharacteristicssectionsofthis
document,andassuchisnotcomplete,exhaustiveorlegallybinding.
13.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarks
arethepropertyoftheirrespectiveowners.
14.Contactinformation
Formoreinformation,pleasevisit:http://www.nxp.com
Forsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.com
BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.?NXPB.V.2010.Allrightsreserved.
ProductdatasheetRev.8—18November201013of14
NXPSemiconductorsBAV99series
High-speedswitchingdiodes
15.Contents
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)
describedherein,havebeenincludedinsection‘Legalinformation’.
1Productprofile..........................1
1.1Generaldescription.....................1
1.2Featuresandbenefits....................1
1.3Applications...........................1
1.4Quickreferencedata....................1
2Pinninginformation......................2
3Orderinginformation.....................2
4Marking................................2
5Limitingvalues..........................3
6Thermalcharacteristics..................4
7Characteristics..........................4
8Testinformation.........................6
8.1Qualityinformation......................6
9Packageoutline.........................7
10Packinginformation.....................7
11Soldering..............................8
12Revisionhistory........................11
13Legalinformation.......................12
13.1Datasheetstatus......................12
13.2Definitions............................12
13.3Disclaimers...........................12
13.4Trademarks...........................13
14Contactinformation.....................13
15Contents..............................14
?NXPB.V.2010.Allrightsreserved.
Formoreinformation,pleasevisit:http://www.nxp.com
Forsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.com
Dateofrelease:18November2010
Documentidentifier:BAV99_SER
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