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黄火林， 现任大连理工大学光电工程与仪器科学学院副教授，硕士生导师。2016年入选大连市青年科技之星。2006年7月和2011年7月于厦门大学物理系分别获得学士和博士学位，2011年8月至2014年10月在新加坡国立大学（NUS）电机工程系（ECE）从事新一代GaN材料功率电子器件研制工作，期间负责带领多名博士生开展《高压高功率氮化镓材料功率电子器件技术研发》重大项目。该项目典型成果是获得+5V阈值电压和超过1200V击穿电压性能的常关型（增强型）功率器件，以及基于无金（Au-free）工艺技术的+2V阈值电压和600V击穿电压的常关型功率器件，项目指标达到同期国际先进水平。2014年12月被引进大连理工大学，主要继续从事GaN材料功率电子器件技术以及新型GaN材料光电磁传感器集成技术工作，在GaN电子器件技术方向至今已在IEEE Electron Device Letters、IEEE Transactions on Power Electronics等重要学术期刊和国际会议上发表学术论文数十篇，作为第一发明人已经申请和授权专利十余项。 5、中科院半导体所、苏州纳米所等多项重点实验室开放课题和滚动支持 [1] H. Huang*, Z. Sun, Y. Cao, et al., Investigation of Surface Traps-Induced Current Collapse Phenomenon in AlGaN/GaN High Electron Mobility Transistors with Schottky Gate Structures, J. Phys. D: Appl. Phys., vol. 51, p. 345102, 2018 (SCI, JCR-2区). [2] H. Huang*, F. Li, Z. Sun, and Y. Cao, Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices, Micromachines, vol. 9, p. 658, 2018 (SCI, JCR-2区). [3] H. Huang*, Z. Sun, F. Zhang, et al., Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme, Physica E, vol. 108, pp. 197-201, 2019 (SCI, JCR-2区). [4] H. Huang*, F. Li, Z. Sun, et al., Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Block Layer Structure, Electronics, vol. 8, p. 241, 2019 (SCI, JCR-2区). [5] H. Huang*, F. Li, Z. Sun, et al., Proposal and Demonstration of GaN-Based Normally-Off Vertical Field-Effect Transistor with a Design of Back Current Block Layer, Key Eng. Mater., vol. 787, pp. 69-73, 2018 (EI). [6] H. Huang*, Y. Cao, et al., Improved Wide-bandgap Gallium Nitride Hall Sensors for High Temperature Applications, 2019 Collaborative Conference on Materials Research (CCMR), Goyang, South Korea, June 3-7, pp. **-**, 2019 (SCI). [7] H. Huang*, Z. Sun, et al., Performance-Improved Normally-off AlGaN/GaN High-Electron Mobility Transistors with a Designed p-GaN Area under the Recessed Gate, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1230-1232, 2016 (EI). [8] Z. Sun, H. Huang*, et al., Improved On-Resistance and Breakdown Voltage Vertical GaN-based Field Effect Transistors, 13rd IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, pp. 1101-1103, 2016 (EI). [9] H. Huang*, Z. Sun, Y. Cao, et al., A New Method for Extracting Ohmic Contact Parameters Obtaining the specific contact resistance from transmission line model measurements, 2018 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Xi'an, pp. 153-156, 2018 (EI). [10] H. Huang* and Y.C. Liang, 'Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices', Solid-State Electronics 114, 148-154, 2015 (SCI, JCR-3区). [11] H. Huang, Yung C. Liang, Ganesh S. Samudra, Ting-Fu Chang, and Chih-Fang Huang, “Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs”, IEEE Trans. Power Electron. 29, 2164-2173, 2014 (SCI, JCR-1区). [12] H Huang, Yung C. Liang, Ganesh S. Samudra, and Cassandra Low Lee Ngo, “Au-Free Normally-off AlGaN/GaN-on-Si MIS-HEMTs using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures”, IEEE Electron Device Lett. 35, pp. 569-571, 2014 (SCI, JCR-1区). [13] H. Huang*, Y. Xie, et al., “Growth and fabrication of sputtered TiO2 based ultraviolet detectors”, Appl. Surf. Sci. 293, pp. 248-254, 2014, (SCI, JCR-1区). [14] H. Huang, Y. Xie, et al., “Low-Dark-Current TiO2 MSM UV Photodetectors with Pt Schottky Contacts”, IEEE Electron Device Lett. 32, pp. 530-532, 2011 (SCI, JCR-1区). [15] H. Huang*, W. Yang, et al., “Metal-semiconductor-metal ultraviolet photodetectors based on TiO2 films deposited by radio frequency magnetron sputtering”, IEEE Electron Device Lett. 31, pp. 588-590, 2010 (SCI, JCR-1区). [16] H. Huang*, Y.-H. Wang, et al., 'Formation of Gate Structure by Multiple Fluorinated Dielectric Layers on Partially Recessed Barrier for High Threshold Voltage AlGaN/GaN Power HEMTs', 11th International Conference on Nitride Semiconductors (ICNS-11), 2015, August 30 - September 4, Beijing, China. [17] H. Huang, Y.-H. Wang, et al., “5V High Threshold Voltage Normally-off MIS-HEMTs with Combined Partially Recessed and Multiple Fluorinated-Dielectric Layers Gate Structures”, 46th SSDM 2014, September 8-11, 2014, Ibaraki, Japan. [18] H. Huang, Y. C. Liang, G. S. Samudra, and C.-F. Huang, “Design of Novel Normally-off AlGaN/GaN HEMTs with Combined Gate Recess and Floating Charge Structures”, IEEE PEDS 2013, April 22-25, 2013, Kitakyushu, Japan. [19] H. Huang, Y. C. Liang, and G. S. Samudra, “Theoretical Calculation and Efficient Simulations of Power Semiconductor AlGaN/GaN HEMTs”, IEEE EDSSC 2012, December 3-5, 2012, Chulalongkorn University, Bangkok, Thailand. [20] H. Huang, Y. C. Liang, et al., “Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs”, SISPAD 2012, September 5-7, 2012, Denver, CO, USA. 近三年主要申请和授权发明专利： [1] 黄火林、孙仲豪等，具有纵向栅极结构的常关型HEMT器件及其制备方法，专利号：ZL201610109041.3，授权公告日：2018.06.19 [2] 黄火林，具有三明治栅极介质结构的HEMT器件及其制备方法，专利号：ZL201510392175.6，授权公告日：2018.04.10 [3] 黄火林、梁红伟等，一种纵向短开启栅极沟道型HEMT器件及其制备方法，专利号：ZL201510319284.5，授权公告日：2018.04.27 [4] 黄火林、孙仲豪等，一种具有局部电流阻挡层的纵向栅极结构功率器件及其制备方法，公布号：CN109037327A，已公布，公布日：2018.12.18 [5] 黄火林、孙仲豪，半纵向型欧姆接触电极及其制作方法，公布号：CN108682687A，已公布，公布日：2018.10.19 [6] 黄火林、李飞雨等，一种具有P型埋层结构的增强型HEMT器件及其制备方法，公布号：CN109037326A，已公布，公布日：2018.12.18 [7] 黄火林、孙仲豪等，一种欧姆接触电极有效宽度的计算和判定方法，公布号：CN108197359A，已公布，公布日：2018.06.22 [8] 黄火林、孙仲豪等，一种半导体电极欧姆接触电阻参数提取方法，公布号：CN108170910A，已公布，公布日：2018.06.15 [9] 黄火林、曹亚庆等，二维电子气沟道半耗尽型霍尔传感器及其制作方法，公布号：CN108649117A，已公布，公布日：2018.10.12 [10] 黄火林、曹亚庆等，具有二维电子气沟道势垒层局部凹槽结构的霍尔传感器及其制作方法，公布号：CN108321291A，已公布，公布日：2018.07.24 [11] 黄火林、曹亚庆等，适用于高温工作环境的半导体三维霍尔传感器及其制作方法，公布号：CN107966669A，已公布，公布日：2018.04.27 [12] 孙仲豪、黄火林，具有极化结纵向泄漏电流阻挡层结构的HEMT器件及其制备方法，公布号：CN109004017A，已公布，公布日：2018.12.14 |
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