ElectricalCharacterization-Resistivity:spreadingresistancepro
be(SRP)-Minoritycarrierlifetime:methodtoindirectlydet
erminethepresenceofmetallicimpurity
(suchasFe,Cu,Ni)StackingFaultEpitax
ialthicknesste=KLK=0.707for(100)0.616for(111)
Geometricalbasisofthestackingfaultmethodfordetermining
thethicknessofanepitaxiallayerforthe<111>caseFourierTr
ansformInfrared(FTIR)SpectroscopySchematicrepresentationof
interferometricmesurementofepitaxiallayerthicknessa)Inter
ferometershowingpathlengthsb)Interferogramshowingacohere
ncepeakandside-bursts.Thickness:FTIR,ASRPSheetresis
tance:4pointprobeCrystaldefect:Sirtle,SecoetchCon
centrationdistribution:ASRPC-Vplot-Patternshift:Jun
ctioncheck,Microscope(micrometer)Measurement |
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