ASEMIMOSFETCURRENT12AmpereVOLTAGERANG650VoltsASE12N65S12N65STO
-220123Features:□LowIntrinsicCapacitances□ExcellentSwitchi
ngCharacteristics□ExtendedSafeOperatingArea□UnrivalledGate
Charge:Qg=44nC(Typ.)□BVDSS=650V,ID=12A□RDS(on):0.68?(Max
)@VG=10V□100%AvalancheTested1.Gate(G)2.Drain(D)3.Source(S)
AbsoluteMaximumRatings(Ta=25℃unlessotherwisenoted)SymbolPar
ameterValueUnitVDSSDrain-SourceVoltage650VIDDrainCurrentTj=25℃1
2ATj=100℃7.9VGS(TH)GateThresholdVoltage±30VEASSinglePulseAval
ancheEnergy(note1)660mJIARAvalancheCurrent(note2)12APDPowerD
issipation(Tj=25℃)140WTjJunctionTemperature(Max)150℃TstgStorage
Temperature-55~+150℃TLMaximumleadtemperatureforsolderingpur
pose,1/8”fromcasefor5seconds300℃ThermalCharacteristicsSymbo
lParameterTyp.Max.UnitRθJCThermalResistance,JunctiontoCase-0.8
9℃/WRθJAThermalResistance,JunctiontoAmbient-62.5℃/W2022.3Rev.
2.07-1www.asemi99.comCURRENT12AmpereVOLTAGERANG650VoltsEle
ctricalCharacteristics(Ta=25℃unlessotherwisenoted)ASE12N65S
SymbolParameterTestConditionMin.Typ.Max.UnitOffCharacteristicsB
VDSSDrain-SourceBreakdownVoltageID=250μA，VGS=0650--V△BVDSS/△TJ
BreakdownVoltageTemperatureCoefficientID=250μA,Referenceto2
5℃-0.71-V/℃IDSSZeroGateVoltageDrainCurrentVDS=650V,VGS=0V--1
0μAVDS=520V,Tj=125℃100IGSSFGate-bodyleakageCurrent,ForwardVGS=
+30V,VDS=0V--100nAIGSSRGate-bodyleakageCurrent,ReverseVGS=-30V
,VDS=0V---100OnCharacteristicsVGS(TH)DateThresholdVoltageID=2
50μA,VDS=VGS2-4VRDS(ON)StaticDrain-SourceOn-ResistanceID=6.0A,V
GS=10V--0.68?DynamicCharacteristicsCissInputCapacitanceVDS=25V，
VGS=0，f=1.0MHz-1890-pFCossOutputCapacitance-150-CrssReverseTra
nsferCapacitance-18-SwitchingCharacteristicsTd(on)Turn-OnDelay
TimeVDD=300V，ID=12ARG=25?(Note3,4)-3070nsTrTurn-OnRiseTime-
80165Td(off)Turn-OffDelayTime-144300TfTurn-OffRiseTime-77165Q
gTotalGateChargeVDS=520V,VGS=10V，ID=12A(Note3,4)-4447nCQgsGa
te-SourceCharge-6.7-QgdGate-DrainCharge-18.5-Drain-SourceDiode
CharacteristicsandMaximumRatingsIsMax.DiodeForwardCurrent-
--12AISMMax.PulsedForwardCurrent---48VSDDiodeForwardVoltageI
D=12A--1.4VTrrReverseRecoveryTimeIS=12A,VGS=0VdiF/dt=100A/μs(
Note3)-380-nSQrrReverseRecoveryCharge-3.5-μCNotes:1,L=0.5mH,
IAS=12A,VDD=50V,RG=25?,StartingTJ=25°C2,RepetitiveRatin
g:Pulsewidthlimitedbymaximumjunctiontemperature3,PulseT
est:PulseWidth≤300μs,DutyCycle≤2%4,EssentiallyIndepen
dentofOperatingTemperatureASE12N65SCURRENT12AmpereVOLTAGER
ANG650VoltsTypicalCharacteristicsID,DrainCurrent[A]ID,Dra
inCurrent[A]10C150o-55Co25oC2.250μ※Notes:1.V=DS40VPulse
Test101010-1110010sVTop:10.0V8.0V7.0V6.0V5.5V5.0VBottom:
4.5V※Notes:1.250μsPulseTest2.T=25℃GS15.0VC024681V
GS,Gate-SourceVoltage[V]010101VDS,Drain-SourceVoltage[V]F
igure1.On-RegionCharacteristicsFigure2.TransferCharacteris
ticsRDS(ON)[Ω],Drain-SourceOn-Resistance1.51.00.5V=GS10VGSV
=20V※Note:TJ=25℃05101520253035ID,DrainCurrent[A
]IDR,ReverseDrainCurrent[A]1010150℃※Notes:2.250μsPulseT
est0.40.60.81.V=0VGS1025℃10-10.21.01.21.4VSD,Source-Dr
ainvoltage[V]Figure3.On-ResistanceVariationvsDrainCurrent
andGateVoltageFigure4.BodyDiodeForwardVoltageVariationwi
thSourceCurrentandTemperature=C+C=shortos=+CgdC※Notes;2.
f=S1MHzCapacitance[pF]GCCed)issgsCCsCdsgd(Cdsrssossiss3500C
rss=Cgd30002500200015001.V=0V10005000VGS,Gate-SourceVoltage
[V]121086420V=DS120VV=300DSV=480VDSV※Note:ID=12A0104
0502030QG,TotalGateCharge[nC]10-1010101VDS,Drain-Source
Voltage[V]Figure5.CapacitanceCharacteristicsFigure6.GateC
hargeCharacteristicsBVDSS,(Normalized)Drain-SourceBreakdownVo
ltageRDS(ON),(Normalized)Drain-SourceOn-ResistanceID,DrainCu
rrent[A]ID,DrainCurrent[A]ZθJC(t),ThermalRespo
nse1.2:otes1.V=GS2.I=25D0V0μA1.11.0※N0.90.8-100-50050
100TJ,JunctionTemperature[oC]1502003.SinglePulse10μs100μs1
ms10ms100msDC※Notes:OperationinThisArea1.T=25oCC2.
T=150oCJ21011010010-110-2130210101010Figure9-2.MaximumSafe
OperatingArea01010-110-2isLimitedbyRDS(on)3.02.52.01.51
.0※Notes:1.V=10VGS2.I=6.0AD0.0-1000.5-50050100150200D
=0.50.20.10.050.020.01singlepulse※Notes:1.Z
θJC(t)=2.43℃/WMax.2.DutyFactor,D=t1/t
23.TJM-TC=PDMZθJC(t)PDMt1t2TJ,JunctionTemperatu
re[C]o14121086420150100125255075TC,CaseTemperature[℃]Figure1
0.MaximumDrainCurrentvsCaseTemperatureCURRENT12AmpereVOL
TAGERANG650VoltsASE12N65STypicalCharacteristics(Continued)F
igure7.BreakdownVoltageVariationvsTemperatureFigure8.On-R
esistanceVariationvsTemperatureVDS,Drain-SourceVoltage[V]01
10-410-5101010-310-210-1t1,SquareWavePuls
eDuration[sec]Figure11-2.TransientThermalResponseCurveC
URRENT12AmpereVOLTAGERANG650VoltsASE12N65SGateChargeTest
Circuit&Waveform12VDUTVGSVGSDUTSameTypeasDUT50KΩ200nF300nF3
mAVDSVGS10VQgQgdQgsChargeResistiveSwitchingTestCircuit&Wav
eformsVDSVGSRGDUTVGSVDDRLVDS90%VGS10%10Vtd(on)trtd(off)tftontoffRLVDSVDDRGDUTUnclampedInductiveSwitchingTestCircuit&WaveformsVDSIDRG10VDUTtp10VRGDUTLVDDBVDSSIAS1BVDSSEAS=LIAS2--------------------2BVDSS-VDDVDS(t)ID(t)VDDtpTimeASEMIMOSFETASEMIMOSFET7-22022.3Rev.2.0www.asemi99.com7-32022.3Rev.2.0www.asemi99.com |
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