B1D02065E
SiC Schottky Diode
V 650 V
RRM =
I ( TC=160°C) 2 A
F =
TO-252-2
Q = 6.8 nC
C
CASE
Features
? Extremely low reverse current
1
? No reverse recovery current
2
? Temperature independent switching
? Positive temperature coefficient on V
F
? Excellent surge current capability
1
? Low capacitive charge
CASE
2
Benefits
? Essentially no switching losses
? System efficiency improvement over Si diodes
? Increased power density
? Enabling higher switching frequency
? Reduction of heat sink requirements
? System cost savings due to smaller magnetics
? Reduced EMI
Applications
? Switch mode power supplies (SMPS)
? Uninterruptible power supplies
? Motor drivers
? Power factor correction
Package Pin Definitions
? Pin1- Cathode
? Pin2- Anode
Package Parameters
Part Number Marking Package
B1D02065E B1D02065E TO-252-2
Rev. 2.1 www.basicsemi.com 1 / 7 B1D02065E
SiC Schottky Diode
Maximum Ratings (T =25 ℃ unless otherwise specified)
C
Symbol Parameter Test conditions Value Unit
V Repetitive peak reverse voltage 650 V
RRM
VRSM Non-repetitive peak reverse voltage 650 V
T =25°C 9
C
I Continuous forward current A
F
T =160°C 2
C
I Non- repetitive forward surge current A
FSM TC=25°C , tp=10ms, Half Sine Wave 16
2 2 2
∫i dt i t value T =25°C , t =10ms 1.28 A S
C p
TC=25°C 39
P Power dissipation W
tot
TC=110°C 17
T Operating junction temperature -55~175 °C
j
Tstg Storage temperature -55~175 °C
Thermal Characteristics
Value
Symbol Parameter Unit
Min. Typ. Max.
Rth(jc) Thermal resistance from junction to case 3.762 K/W
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B1D02065E
SiC Schottky Diode
Electrical Characteristics
Static Characteristics
Value
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V DC blocking voltage 650 V
DC Tj=25°C
I =2A T =25°C
F j 1.40
VF Diode forward voltage V
1.70
I =2A T =175°C
F j
V =650V T =25°C
R j 0.1
IR Reverse current μA
1
V =650V T =175°C
R j
AC Characteristics
Value
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V =400V T =25°C
R j
QC Total capacitive charge 6.8 nC
VR
= C ( V ) dV
∫
0
V =1V f=1MHz 99
R
C Total capacitance V =300V f=1MHz 11.9 pF
R
V =600V f=1MHz 11.8
R
EC Capacitance stored energy VR=400V 1.6 μJ
Rev. 2.1 www.basicsemi.com 3 / 7 B1D02065E
SiC Schottky Diode
Typical Performance
4 1
3
25 ℃
175℃
175℃
2 0.1
150℃
150 ℃
100℃
1
100℃
-55 ℃
25 ℃ -55 ℃
0 0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0
200 250 300 350 400 450 500 550 600 650
V (V) V (V)
F R
Figure 1. Typical forward characteristics Figure 2. Typical reverse current as function of
reverse voltage
35 140
D=1
120
30 D=0.7
D=0.5
D=0.3
25 100
D=0.2
D=0.1
20 80
15 60
40
10
5 20
0 0
25 50 75 100 125 150 175 0.1 1 10 100 1000
V (V)
T (℃) R
j
Figure 3. Diode forward current as function Figure 4. Typical capacitance as function of
of temperature, D=duty cycle reverse voltage, C=f(V ); T =25°C; f=1 MHz
R j
Rev. 2.1 www.basicsemi.com 4 / 7
I (A)
F
I (A)
F
I (μA)
R
C (pF)B1D02065E
SiC Schottky Diode
e
Typical Performance
10 50
8 40
6 30
4 20
2 10
0 0
0 100 200 300 400 500 600 25 50 75 100 125 150 175
V (V)
T (℃)
R
j
Figure 5. Typical reverse charge as function Figure 6. Power dissipation as function of
of reverse voltage case temperature
4
3
1
2
0.1
D=0.5
D=0.3
1
D=0.1
D=0.05
D=0.02
D=0.01
Single Pulse
0 0.01
0 200 400 600 800 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
V (V) t (s)
R p
Figure 7.Capacitance stored energy Figure 8. Max. transient thermal impedance,
Z = f(t ), parameter: D =t /T
thjc
Rev. 2.1 www.basicsemi.com 5 / 7
Q (nC)
C
E (μJ)
C
Z (K/W)
thjc
P (W)
totθ
B 1 D 0 2 0 6 5 E
S i C S c h o t t k y D i o d e
P a c k a g e D i m e n s i o n s
E
c
b 3
A 2
E 1
A 1
b
e
L 2
m m
S Y M B O L
M I N N O M M A X
A 2 . 2 0 2 . 3 0 2 . 3 8
A 1 0 . 0 0 - 0 . 2 0
A 2 0 . 9 0 1 . 0 7 1 . 1 7
b 0 . 6 8 0 . 7 8 0 . 9 0
b 3 5 . 2 3 5 . 3 3 5 . 4 6
c 0 . 4 3 0 . 5 3 0 . 6 1
D 5 . 9 8 6 . 1 0 6 . 2 2
D 1 5 . 3 0 R E F
E 6 . 4 0 6 . 6 0 6 . 7 3
E 1 4 . 6 3 - -
e 2 . 2 8 6 B S C
H 9 . 4 0 1 0 . 1 0 1 0 . 5 0
L 1 . 3 8 1 . 5 0 1 . 7 5
L 1 2 . 9 0 R E F
L 2 0 . 5 1 B S C
L 3 0 . 8 8 - 1 . 2 8
L 4 0 . 5 0 - 1 . 0 0
L 5 1 . 6 5 1 . 8 0 1 . 9 5
θ 0° - 8°
R e v . 2 . 1 w w w . b a s i c s e m i . c o m 6 / 7
D
L 3
L 4
L 5
A
L 1
L
H
D 1B1D02065E
SiC Schottky Diode
Revision History
Document
Date of Release Description of Changes
Version
Release of the datasheet.
Rev 1.0 2019-07-23
Rev 2.0 2020-07-06 Characteristics updated.
Rev. 2.1 2020-11-02 Characteristics updated.
BASiC Semiconductor Ltd.
Shenzhen, China
? 2020 BASiC Semiconductor Ltd.
All Rights Reserved.
Information
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BASiC Semiconductor Office
Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
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