BAV70series
High-speedswitchingdiodes
1.Productprofile
1.1Generaldescription
High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)
plasticpackages.
1.2Features
1.3Applications
nHigh-speedswitching
nGeneral-purposeswitching
1.4Quickreferencedata
[1]WhenswitchedfromI
F
=10mAtoI
R
=10mA;R
L
=100?;measuredatI
R
=1mA.
Rev.07—27November2007Productdatasheet
Table1.Productoverview
TypenumberPackagePackage
configuration
Configuration
NXPJEITAJEDEC
BAV70SOT23-TO-236ABsmalldualcommoncathode
BAV70MSOT883SC-101-leadlessultra
small
dualcommoncathode
BAV70SSOT363SC-88-verysmallquadruplecommon
cathode/commoncathode
BAV70TSOT416SC-75-ultrasmalldualcommoncathode
BAV70WSOT323SC-70-verysmalldualcommoncathode
nHighswitchingspeed:t
rr
≤4nsnLowcapacitance:C
d
≤1.5pF
nLowleakagecurrentnReversevoltage:V
R
≤100V
nSmallSMDplasticpackages
Table2.Quickreferencedata
SymbolParameterConditionsMinTypMaxUnit
Perdiode
I
R
reversecurrentV
R
=80V--0.5μA
V
R
reversevoltage--100V
t
rr
reverserecoverytime
[1]
--4ns
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
2.Pinninginformation
3.Orderinginformation
Table3.Pinning
PinDescriptionSimplifiedoutlineSymbol
BAV70;BAV70T;BAV70W
1anode(diode1)
2anode(diode2)
3commoncathode
BAV70M
1anode(diode1)
2anode(diode2)
3commoncathode
BAV70S
1anode(diode1)
2anode(diode2)
3commoncathode(diode3
anddiode4)
4anode(diode3)
5anode(diode4)
6commoncathode(diode1
anddiode2)
006aaa144
12
3
006aab034
1
3
2
3
1
2
Transparent
topview
006aab034
1
3
2
132
456
006aab104
13
6
2
54
Table4.Orderinginformation
TypenumberPackage
NameDescriptionVersion
BAV70-plasticsurface-mountedpackage;3leadsSOT23
BAV70MSC-101leadlessultrasmallplasticpackage;3solderlands;
body1.0×0.6×0.5mm
SOT883
BAV70SSC-88plasticsurface-mountedpackage;6leadsSOT363
BAV70TSC-75plasticsurface-mountedpackage;3leadsSOT416
BAV70WSC-70plasticsurface-mountedpackage;3leadsSOT323
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20072of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
4.Marking
[1]=-:madeinHongKong
=p:madeinHongKong
=t:madeinMalaysia
=W:madeinChina
5.Limitingvalues
Table5.Markingcodes
TypenumberMarkingcode
[1]
BAV70A4
BAV70MS4
BAV70SA4
BAV70TA4
BAV70WA4
Table6.Limitingvalues
InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnit
Perdiode
V
RRM
repetitivepeakreverse
voltage
-100V
V
R
reversevoltage-100V
I
F
forwardcurrent
BAV70T
amb
≤25°C-215mA
BAV70MT
s
=90°C-150mA
BAV70ST
s
=60°C-250mA
BAV70TT
s
=90°C-150mA
BAV70WT
amb
≤25°C-175mA
I
FRM
repetitivepeakforward
current
BAV70-450mA
BAV70M-500mA
BAV70S-450mA
BAV70T-500mA
BAV70W-500mA
I
FSM
non-repetitivepeakforward
current
squarewave
[1]
t
p
=1μs-4A
t
p
=1ms-1A
t
p
=1s-0.5A
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20073of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
[1]T
j
=25°Cpriortosurge.
[2]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandard
footprint.
[3]Reflowsolderingistheonlyrecommendedsolderingmethod.
6.Thermalcharacteristics
P
tot
totalpowerdissipation
[2]
BAV70T
amb
≤25°C-250mW
BAV70MT
amb
≤25°C
[3]
-250mW
BAV70ST
s
=60°C-350mW
BAV70TT
s
=90°C-170mW
BAV70WT
amb
≤25°C-200mW
Perdevice
I
F
forwardcurrent
BAV70T
amb
≤25°C-125mA
BAV70MT
s
=90°C-75mA
BAV70ST
s
=60°C-100mA
BAV70TT
s
=90°C-75mA
BAV70WT
amb
≤25°C-100mA
T
j
junctiontemperature-150°C
T
amb
ambienttemperature?65+150°C
T
stg
storagetemperature?65+150°C
Table6.Limitingvalues…continued
InaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnit
Table7.Thermalcharacteristics
SymbolParameterConditionsMinTypMaxUnit
Perdiode
R
th(j-a)
thermalresistancefrom
junctiontoambient
infreeair
[1]
BAV70--500K/W
BAV70M
[2]
--500K/W
BAV70W--625K/W
R
th(j-t)
thermalresistancefrom
junctiontotie-point
BAV70--360K/W
BAV70W--300K/W
R
th(j-sp)
thermalresistancefrom
junctiontosolderpoint
BAV70S--255K/W
BAV70T--350K/W
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20074of15
[1]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.
[2]Reflowsolderingistheonlyrecommendedsolderingmethod.
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
7.Characteristics
[1]Pulsetest:t
p
≤300μs;δ≤0.02.
[2]WhenswitchedfromI
F
=10mAtoI
R
=10mA;R
L
=100?;measuredatI
R
=1mA.
[3]WhenswitchedfromI
F
=10mA;t
r
=20ns.
Table8.Characteristics
T
amb
=25°Cunlessotherwisespecified.
SymbolParameterConditionsMinTypMaxUnit
Perdiode
V
F
forwardvoltage
[1]
I
F
=1mA--715mV
I
F
=10mA--855mV
I
F
=50mA--1V
I
F
=150mA--1.25V
I
R
reversecurrentV
R
=25V--30nA
V
R
=80V--0.5μA
V
R
=25V;T
j
=150°C--30μA
V
R
=80V;T
j
=150°C--100μA
C
d
diodecapacitanceV
R
=0V;f=1MHz--1.5pF
t
rr
reverserecoverytime
[2]
--4ns
V
FR
forwardrecoveryvoltage
[3]
--1.75V
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20075of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
(1)T
amb
=150°C
(2)T
amb
=85°C
(3)T
amb
=25°C
(4)T
amb
=?40°C
Basedonsquarewavecurrents.
T
j
=25°C;priortosurge
Fig1.Forwardcurrentasafunctionofforward
voltage;typicalvalues
Fig2.Non-repetitivepeakforwardcurrentasa
functionofpulseduration;maximumvalues
(1)T
amb
=150°C
(2)T
amb
=85°C
(3)T
amb
=25°C
(4)T
amb
=?40°C
f=1MHz;T
amb
=25°C
Fig3.Reversecurrentasafunctionofreverse
voltage;typicalvalues
Fig4.Diodecapacitanceasafunctionofreverse
voltage;typicalvalues
006aab107
V
F
(V)
0.21.41.00.6
1
10
10
2
10
3
I
F
(mA)
10
-1
(1)(2)(3)(4)
mbg704
10
1
10
2
I
FSM
(A)
10
?1
t
p
(μs)
110
4
10
3
1010
2
006aab108
10
-2
10
-4
10
-3
10
1
10
-1
10
2
I
R
(mA)
10
-5
V
R
(V)
010080406020
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF
)
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20076of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
8.Testinformation
(1)I
R
=1mA
Inputsignal:reversepulserisetimet
r
=0.6ns;reversevoltagepulsedurationt
p
=100ns;dutycycleδ=0.05
Oscilloscope:risetimet
r
=0.35ns
Fig5.Reverserecoverytimetestcircuitandwaveforms
Inputsignal:forwardpulserisetimet
r
=20ns;forwardcurrentpulsedurationt
p
≥100ns;dutycycleδ≤0.005
Fig6.Forwardrecoveryvoltagetestcircuitandwaveforms
t
rr
(1)
+I
F
t
outputsignal
t
r
t
p
t
10%
90%
V
R
inputsignal
V=V
R
+
I
F
·
R
S
R
S
=50W
I
F
D.U.T.
R
i
=50W
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10%
90%
I
inputsignal
R
S
=50?
I
R
i
=50?
OSCILLOSCOPE
1k?450?
D.U.T.
mga882
V
FR
t
outputsignal
V
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20077of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
9.Packageoutline
Fig7.PackageoutlineBAV70(SOT23/TO-236AB)Fig8.PackageoutlineBAV70M(SOT883/SC-101)
Fig9.PackageoutlineBAV70S(SOT363/SC-88)Fig10.PackageoutlineBAV70T(SOT416/SC-75)
04-11-04Dimensionsinmm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
03-04-03Dimensionsinmm
0.62
0.55
0.55
0.47
0.50
0.46
0.65
0.20
0.12
3
21
0.30
0.22
0.30
0.22
1.02
0.95
0.35
06-03-16Dimensionsinmm
0.25
0.10
0.3
0.2
pin1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
04-11-04Dimensionsinmm
0.95
0.60
1.8
1.4
1.75
1.45
0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
04-11-04Dimensionsinmm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20078of15
Fig11.PackageoutlineBAV70W(SOT323/SC-70)
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
10.Packinginformation
[1]Forfurtherinformationandtheavailabilityofpackingmethods,seeSection14.
[2]T1:normaltaping
[3]T2:reversetaping
11.Soldering
Table9.Packingmethods
Theindicated-xxxarethelastthreedigitsofthe12NCorderingcode.
[1]
TypenumberPackageDescriptionPackingquantity
300010000
BAV70SOT234mmpitch,8mmtapeandreel-215-235
BAV70MSOT8832mmpitch,8mmtapeandreel--315
BAV70SSOT3634mmpitch,8mmtapeandreel;T1
[2]
-115-135
4mmpitch,8mmtapeandreel;T2
[3]
-125-165
BAV70TSOT4164mmpitch,8mmtapeandreel-115-135
BAV70WSOT3234mmpitch,8mmtapeandreel-115-135
Fig12.ReflowsolderingfootprintBAV70(SOT23/TO-236AB)
solderresist
occupiedarea
solderlands
solderpaste
Dimensionsinmm
sot023
1.00
0.60
(3x)
1.30
12
3
2.50
3.00
0.85
2.70
2.90
0.50(3x)
0.60(3x)
3.30
0.85
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November20079of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
Fig13.WavesolderingfootprintBAV70(SOT23/TO-236AB)
Reflowsolderingistheonlyrecommendedsolderingmethod.
Fig14.ReflowsolderingfootprintBAV70M(SOT883/SC-101)
sot023
4.004.60
2.80
4.50
1.20
3.40
3
21
1.20(2x)
preferredtransportdirectionduringsoldering
Dimensionsinmm
solderresist
occupiedarea
solderlands
solderlands
solderpaste
solderresist
occupiedarea
Dimensionsinmm
1.30
0.30R=0.05(12·)R=0.05(12·)
0.600.700.800.90
0.30
(2·)
0.35
(2·)
0.20
0.40
(2·)
0.50
(2·)
0.25
(2·)
0.30
0.40
0.50
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November200710of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
Fig15.ReflowsolderingfootprintBAV70S(SOT363/SC-88)
Fig16.WavesolderingfootprintBAV70S(SOT363/SC-88)
sot363
1.20
2.40
0.50
(4·)
0.40
(2·)
0.902.10
0.50
(4·)
0.60
(2·)
2.35
2.65
solderlands
solderresist
occupiedarea
solderpaste
Dimensionsinmm
solderlands
solderresist
occupiedarea
1.15
3.75
transportdirectionduringsoldering
1.000.304.004.50
5.25
sot363Dimensionsinmm
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November200711of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
Fig17.ReflowsolderingfootprintBAV70T(SOT416/SC-75)
Fig18.ReflowsolderingfootprintBAV70W(SOT323/SC-70)
Fig19.WavesolderingfootprintBAV70W(SOT323/SC-70)
solderresistoccupiedarea
solderlandssolderpasteDimensionsinmm
msa438
2.0
0.6
(3x)
0.7
1.5
1
2
3
1.1
2.2
0.5
(3x)
0.85
0.6
1.9
msa429
0.852.35
0.55
(3·)
1.3250.75
2.40
2.65
1.30
3
2
1
0.60
(3·)
0.50
(3·)1.90
solderlands
solderresist
occupiedarea
solderpaste
Dimensionsinmm
msa419
4.00
4.60
2.103.65
1.15
2.70
3
2
1
0.90
(2·)
preferredtransportdirectionduringsoldering
solderlands
solderresist
occupiedarea
Dimensionsinmm
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November200712of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
12.Revisionhistory
Table10.Revisionhistory
DocumentIDReleasedateDatasheetstatusChangenoticeSupersedes
BAV70_SER_720071127Productdatasheet-BAV70_6
BAV70S_2
BAV70T_3
BAV70W_6
Modifications:?Theformatofthisdatasheethasbeenredesignedtocomplywiththenewidentity
guidelinesofNXPSemiconductors.
?Legaltextshavebeenadaptedtothenewcompanynamewhereappropriate.
?TypenumberBAV70Madded
?Section1.1“Generaldescription”:amended
?Table1“Productoverview”:added
?Table2“Quickreferencedata”:added
?Table6“Limitingvalues”:forBAV70,BAV70SandBAV70WchangeofV
RRM
maximum
valuefrom85Vto100V
?Table6“Limitingvalues”:forBAV70,BAV70SandBAV70WchangeofV
R
maximumvalue
from75Vto100V
?Table8“Characteristics”:forBAV70,BAV70S,BAV70TandBAV70Wchangeof
I
R
conditionV
R
from75Vto80VforT
j
=25°C
?Table8“Characteristics”:forBAV70,BAV70SandBAV70WchangeofI
R
maximumvalue
from2.5μAto0.5μAforT
j
=25°C
?Table8“Characteristics”:forBAV70TchangeofI
R
maximumvaluefrom2.0μAto0.5μA
forT
j
=25°C
?Table8“Characteristics”:forBAV70,BAV70S,BAV70TandBAV70Wchangeof
I
R
maximumvaluefrom60μAto30μAforI
R
conditionV
R
=25V;T
j
=150°C
?Table8“Characteristics”:forBAV70,BAV70S,BAV70TandBAV70Wchangeof
I
R
conditionV
R
from75Vto80VforT
j
=150°C
?Section8“Testinformation”:added
?Section10“Packinginformation”:added
?Section11“Soldering”:added
?Section13“Legalinformation”:updated
BAV70_620020403Productspecification-BAV70_5
BAV70S_219971021Productspecification-BAV70S_1
BAV70T_320040204Productspecification-BAV70T_2
BAV70W_620020405Productspecification-BAV70W_5
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November200713of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
13.Legalinformation
13.1Datasheetstatus
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm‘shortdatasheet’isexplainedinsection“Definitions”.
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus
informationisavailableontheInternetatURLhttp://www.nxp.com.
13.2Definitions
Draft—Thedocumentisadraftversiononly.Thecontentisstillunder
internalreviewandsubjecttoformalapproval,whichmayresultin
modificationsoradditions.NXPSemiconductorsdoesnotgiveany
representationsorwarrantiesastotheaccuracyorcompletenessof
informationincludedhereinandshallhavenoliabilityfortheconsequencesof
useofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheet
withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended
forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand
fullinformation.Fordetailedandfullinformationseetherelevantfulldata
sheet,whichisavailableonrequestviathelocalNXPSemiconductorssales
office.Incaseofanyinconsistencyorconflictwiththeshortdatasheet,the
fulldatasheetshallprevail.
13.3Disclaimers
General—Informationinthisdocumentisbelievedtobeaccurateand
reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor
warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch
informationandshallhavenoliabilityfortheconsequencesofuseofsuch
information.
Righttomakechanges—NXPSemiconductorsreservestherighttomake
changestoinformationpublishedinthisdocument,includingwithout
limitationspecificationsandproductdescriptions,atanytimeandwithout
notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior
tothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,
authorizedorwarrantedtobesuitableforuseinmedical,military,aircraft,
spaceorlifesupportequipment,norinapplicationswherefailureor
malfunctionofanNXPSemiconductorsproductcanreasonablybeexpected
toresultinpersonalinjury,deathorseverepropertyorenvironmental
damage.NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseof
NXPSemiconductorsproductsinsuchequipmentorapplicationsand
thereforesuchinclusionand/oruseisatthecustomer’sownrisk.
Applications—Applicationsthataredescribedhereinforanyofthese
productsareforillustrativepurposesonly.NXPSemiconductorsmakesno
representationorwarrantythatsuchapplicationswillbesuitableforthe
specifiedusewithoutfurthertestingormodification.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedin
theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent
damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof
thedeviceattheseoranyotherconditionsabovethosegiveninthe
Characteristicssectionsofthisdocumentisnotimplied.Exposuretolimiting
valuesforextendedperiodsmayaffectdevicereliability.
Termsandconditionsofsale—NXPSemiconductorsproductsaresold
subjecttothegeneraltermsandconditionsofcommercialsale,aspublished
athttp://www.nxp.com/profile/terms,includingthosepertainingtowarranty,
intellectualpropertyrightsinfringementandlimitationofliability,unless
explicitlyotherwiseagreedtoinwritingbyNXPSemiconductors.Incaseof
anyinconsistencyorconflictbetweeninformationinthisdocumentandsuch
termsandconditions,thelatterwillprevail.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpreted
orconstruedasanoffertosellproductsthatisopenforacceptanceorthe
grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents
orotherindustrialorintellectualpropertyrights.
13.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarks
arethepropertyoftheirrespectiveowners.
14.Contactinformation
Foradditionalinformation,pleasevisit:http://www.nxp.com
Forsalesofficeaddresses,sendanemailto:salesaddresses@nxp.com
Documentstatus
[1][2]
Productstatus
[3]
Definition
Objective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
BAV70_SER_7?NXPB.V.2007.Allrightsreserved.
ProductdatasheetRev.07—27November200714of15
NXPSemiconductorsBAV70series
High-speedswitchingdiodes
15.Contents
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)
describedherein,havebeenincludedinsection‘Legalinformation’.
1Productprofile..........................1
1.1Generaldescription......................1
1.2Features..............................1
1.3Applications...........................1
1.4Quickreferencedata.....................1
2Pinninginformation......................2
3Orderinginformation.....................2
4Marking................................3
5Limitingvalues..........................3
6Thermalcharacteristics...................4
7Characteristics..........................5
8Testinformation.........................7
9Packageoutline.........................8
10Packinginformation......................9
11Soldering..............................9
12Revisionhistory........................13
13Legalinformation.......................14
13.1Datasheetstatus......................14
13.2Definitions............................14
13.3Disclaimers...........................14
13.4Trademarks...........................14
14Contactinformation.....................14
15Contents..............................15
?NXPB.V.2007.Allrightsreserved.
Formoreinformation,pleasevisit:http://www.nxp.com
Forsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.com
Dateofrelease:27November2007
Documentidentifier:BAV70_SER_7
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