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APM2014NU
2012-09-09 | 阅:  转:  |  分享 
  
N-ChannelEnhancementModeMOSFET

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw1

ANPECreservestherighttomakechangestoimprovereliabilityormanufacturabilitywithoutnotice,andadvise

customerstoobtainthelatestversionofrelevantinformationtoverifybeforeplacingorders.

APM2014NU

APM2014N

HandlingCode

Temp.Range

PackageCode

PackageCode

U:TO-252

OperatingJunctionTemp.Range

C:-55to150C

HandlingCode

TU:TubeTR:Tape&Reel

LeadFreeCode

L:LeadFreeDeviceBlank:OriginalDevice

APM2014NU:APM2014N

XXXXXXXXXX-DateCode

LeadFreeCode

PinDescription

OrderingandMarkingInformation

Features

Applications

?20V/40A,

RDS(ON)=12m?(typ.)@VGS=4.5V

RDS(ON)=18m?(typ.)@VGS=2.5V

?SuperHighDenseCellDesign

?ReliableandRugged

?LeadFreeAvailable(RoHSCompliant)

?PowerManagementinDesktopComputeror

DC/DCConverters

TopViewofTO-252

N-ChannelMOSFET

GD

S

G

S

D

Note:ANPEClead-freeproductscontainmoldingcompoundsand100%mattetinplateterminationfinish;

whicharefullycompliantwithRoHSandcompatiblewithbothSnPbandlead-freesoldieringoperations.

ANPEClead-freeproductsmeetorexceedthelead-freerequirementsofIPC/JEDECJSTD-020CforMSL

classificationatlead-freepeakreflowtemperature.

°

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw2

APM2014NU

SymbolParameterRatingUnit

CommonRatings(TA=25°CUnlessOtherwiseNoted)

VDSSDrain-SourceVoltage20

VGSSGate-SourceVoltage±16V

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

ISDiodeContinuousForwardCurrentTC=25°C16A

MountedonLargeHeatSink

TC=25°C100I

DP300μsPulseDrainCurrentTestedT

C=100°C75

A

TC=25°C40I

DContinuousDrainCurrentT

C=100°C25

A

TC=25°C50P

DMaximumPowerDissipationT

C=100°C20

W

RθJCThermalResistance-JunctiontoCase2.5°C/W

MountedonPCBof1in2padarea

TA=25°C100I

DP300μsPulseDrainCurrentTestedT

A=100°C75

A

TA=25°C10I

DContinuousDrainCurrentT

A=100°C6

A

TA=25°C2.5P

DMaximumPowerDissipationT

A=100°C1

W

RθJAThermalResistance-JunctiontoAmbient50°C/W

MountedonPCBofMinimumFootprint

TA=25°C100I

DP300μsPulseDrainCurrentTestedT

A=100°C75

A

TA=25°C9I

DContinuousDrainCurrentT

A=100°C6

A

TA=25°C1.6P

DMaximumPowerDissipationT

A=100°C0.6

W

RθJAThermalResistance-JunctiontoAmbient75°C/W

Note:

Currentlimitedbybondwire.

AbsoluteMaximumRatings

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw3

APM2014NU

ElectricalCharacteristics(TA=25°Cunlessotherwisenoted)

APM2014NUSymbolParameterTestCondition

Min.Typ.Max.

Unit

StaticCharacteristics

BVDSSDrain-SourceBreakdownVoltageVGS=0V,IDS=250μA20V

VDS=16V,VGS=0V1I

DSSZeroGateVoltageDrainCurrentT

J=85°C30

μA

VGS(th)GateThresholdVoltageVDS=VGS,IDS=250μA0.70.91.5V

IGSSGateLeakageCurrentVGS=±16V,VDS=0V±100nA

VGS=4.5V,IDS=10A1214R

DS(ON)

aDrain-SourceOn-stateResistance

VGS=2.5V,IDS=5A1825m

?

Diode

VSDaDiodeForwardVoltageISD=4A,VGS=0V0.81.3V

DynamicCharacteristicsb

RGGateResistanceVGS=0V,VDS=0V,F=1MHz1.7?

CissInputCapacitance1290

CossOutputCapacitance300

CrssReverseTransferCapacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz210

pF

td(ON)Turn-onDelayTime1020

TrTurn-onRiseTime1529

td(OFF)Turn-offDelayTime2852

TfTurn-offFallTime

VDD=10V,RL=10?,

IDS=1A,VGEN=4.5V,

RG=6?

1733

ns

trrbReverseRecoveryTime20ns

QrrbReverseRecoveryChargeISD=10A,dISD/dt=100A/μs9nC

GateChargeCharacteristicsb

QgTotalGateCharge18.224

QgsGate-SourceCharge5.6

QgdGate-DrainCharge

VDS=10V,VGS=4.5V,

IDS=5A

4.8

nC

Notes:

a:Pulsetest;pulsewidth≤300μs,dutycycle≤2%.

b:Guaranteedbydesign,notsubjecttoproductiontesting.

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw4

APM2014NU

TypicalCharacteristics

PowerDissipation

Ptot

-Power(W)

Tj-JunctionTemperature(°C)

ID-DrainCurrent(A)

DrainCurrent

Tj-JunctionTemperature(°C)

SafeOperationArea

VDS-Drain-SourceVoltage(V)

ID-DrainCurrent(A)

NormalizedEffectiveTransient

ThermalTransientImpedance

SquareWavePulseDuration(sec)

0204060801001201401601800

10

20

30

40

50

60

TC=25oC









1E-41E-30.010.11101000.01

0.1

1

2

Mountedon1in2pad

RθJA:50oC/W

0.01

0.02

0.05

0.1

0.2

SinglePulse





Duty=0.5





0204060801001201401601800

10

20

30

40

50

TC=25oC,VG=4.5V









0.1110700.1

1

10

100

200

10msRds(on)Limit

TC=25oC

1s

100ms

DC









Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw5

APM2014NU

VDS-Drain-SourceVoltage(V)

ID-DrainCurrent(A)

OutputCharacteristics

RDS(ON)

-On-Resistance(m

?)

Drain-SourceOnResistance

ID-DrainCurrent(A)

TransferCharacteristics

VGS-Gate-SourceVoltage(V)

ID-DrainCurrent(A)

Tj-JunctionTemperature(°C)

GateThresholdVoltage

NormalizedThresholdVlotage

TypicalCharacteristics(Cont.)

-50-2502550751001251500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6



IDS=250μA







0123450

10

20

30

40

50

60

70

80

90

100

4V

2V









VGS=5,6,7,8,9,10V

3V

2.5V

0204060801000

4

8

12

16

20

24

28

32

36

40









VGS=2.5V

VGS=4.5V

01234560

10

20

30

40

50

60

70

80

90

100









Tj=125oC

Tj=25oC

Tj=-55oC

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw6

APM2014NU

Drain-SourceOnResistance

NormalizedOnResistance

Tj-JunctionTemperature(°C)VSD-Source-DrainVoltage(V)

Source-DrainDiodeForward

IS-SourceCurrent(A)

VDS-Drain-SourceVoltage(V)

C-Capacitance(pF)

CapacitanceGateCharge

QG-GateCharge(nC)

VGS

-Gate-sourceVoltage(V)

TypicalCharacteristics(Cont.)

-50-2502550751001251500.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

RON@Tj=25oC:12m?

VGS=4.5V

IDS=10A









0.00.20.40.60.81.01.21.40.1

1

10

30









Tj=25oC

Tj=150oC

0481216200

300

600

900

1200

1500

1800

2100









Frequency=1MHz

Ciss

Coss

Crss

0481216200

1

2

3

4

5

VDS=10V

ID=5A









Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw7

APM2014NU

PackageInformation

TO-252(ReferenceJEDECRegistrationTO-252)

MillimetersInchesDim

Min.Max.Min.Max.

A2.182.390.0860.094

A10.891.270.0350.050

b0.5080.890.0200.035

b25.2075.4610.2050.215

C0.460.580.0180.023

C10.460.580.0180.023

D5.3346.220.2100.245

D15.2REF0.205REF

E6.356.730.2500.265

E15.3REF0.209REF

e13.965.180.1560.204

H9.39810.410.3700.410

L0.510.020

L10.641.020.0250.040

L20.892.0320.0350.080

L2

D

L1

b

b2

E

C1

A

H

L

C

A1e1D1

E1

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw8

APM2014NU

PhysicalSpecifications

t25CtoPeak

tp

Ramp-up

tL

Ramp-down

ts

Preheat

Tsmax

Tsmin

TL

TP

25

Temperature

Time

CriticalZone

TLtoTP

°

TerminalMaterialSolder-PlatedCopper(SolderMaterial:90/10or63/37SnPb),100%Sn

LeadSolderabilityMeetsEIASpecificationRSI86-91,ANSI/J-STD-002Category3.



ReflowCondition(IR/ConvectionorVPRReflow)

ClassificationReflowProfiles

ProfileFeatureSn-PbEutecticAssemblyPb-FreeAssembly

Averageramp-uprate

(TLtoTP)3°C/secondmax.3°C/secondmax.

Preheat

-TemperatureMin(Tsmin)

-TemperatureMax(Tsmax)

-Time(mintomax)(ts)

100°C

150°C

60-120seconds

150°C

200°C

60-180seconds

Timemaintainedabove:

-Temperature(TL)

-Time(tL)

183°C

60-150seconds

217°C

60-150seconds

Peak/ClassificatioonTemperature(Tp)Seetable1Seetable2

Timewithin5°Cofactual

PeakTemperature(tp)10-30seconds20-40seconds

Ramp-downRate6°C/secondmax.6°C/secondmax.

Time25°CtoPeakTemperature6minutesmax.8minutesmax.

Notes:Alltemperaturesrefertotopsideofthepackage.Measuredonthebodysurface.

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw9

APM2014NU

Table2.Pb-freeProcess–PackageClassificationReflowTemperatures

PackageThicknessVolumemm3

<350

Volumemm3

350-2000

Volumemm3

>2000

<1.6mm260+0°C260+0°C260+0°C

1.6mm–2.5mm260+0°C250+0°C245+0°C

≥2.5mm250+0°C245+0°C245+0°C

Tolerance:Thedevicemanufacturer/suppliershallassureprocesscompatibilityuptoand

includingthestatedclassificationtemperature(thismeansPeakreflowtemperature+0°C.

Forexample260°C+0°C)attheratedMSLlevel.



TestitemMethodDescription

SOLDERABILITYMIL-STD-883D-2003245°C,5SEC

HOLTMIL-STD883D-1005.71000HrsBias@125°C

PCTJESD-22-B,A102168Hrs,100%RH,121°C

TSTMIL-STD883D-1011.9-65°C~150°C,200Cycles

CarrierTape&ReelDimensions

t

Ao

E

W

PoP

Ko

Bo

D1

D

F

P1

ReliabilityTestProgram

Table1.SnPbEntecticProcess–PackagePeakReflowTemperatures

PackageThicknessVolumemm3

<350

Volumemm3

?350

<2.5mm240+0/-5°C225+0/-5°C

≥2.5mm225+0/-5°C225+0/-5°C



ClassificationReflowProfiles(Cont.)

Copyright?ANPECElectronicsCorp.

Rev.B.2-Oct.,2005

www.anpec.com.tw10

APM2014NU

ApplicationABCJT1T2WPE

330±3100±213±0.52±0.516.4+0.3-0.22.5±0.516+0.3-0.18±0.11.75±0.1

FDD1PoP1AoBoKotTO-252

7.5±0.11.5+0.11.5±0.254.0±0.12.0±0.16.8±0.110.4±0.12.5±0.10.3±0.05

ApplicationCarrierWidthCoverTapeWidthDevicesPerReel

TO-2521613.32500

CustomerService

CoverTapeDimensions

CarrierTape&ReelDimensions(Cont.)

A

J

B

T2

T1

C

(mm)

AnpecElectronicsCorp.

HeadOffice:

No.6,Dusing1stRoad,SBIP,

Hsin-Chu,Taiwan,R.O.C.

Tel:886-3-5642000

Fax:886-3-5642050

TaipeiBranch:

7F,No.137,Lane235,PacChiaoRd.,

HsinTienCity,TaipeiHsien,Taiwan,R.O.C.

Tel:886-2-89191368

Fax:886-2-89191369

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