1
DataSheet
8Mbit/16Mbit(x8)Multi-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
?2000SiliconStorageTechnology,Inc.TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.MPFisatrademarkofSiliconStorageTechnology,Inc.
396-211/00S71146Thesespecificationsaresubjecttochangewithoutnotice.
FEATURES:
?Organizedas1Mx8/2Mx8
SingleVoltageReadandWriteOperations
-3.0-3.6VforSST39LF080/016
-2.7-3.6VforSST39VF080/016
SuperiorReliability
-Endurance:100,000Cycles(typical)
-Greaterthan100yearsDataRetention
LowPowerConsumption:
-ActiveCurrent:15mA(typical)
-StandbyCurrent:4μA(typical)
-AutoLowPowerMode:4μA(typical)
Sector-EraseCapability
-Uniform4KBytesectors
Block-EraseCapability
-Uniform64KByteblocks
FastReadAccessTime:
-55nsforSST39LF080/016
-70and90nsforSST39VF080/016
LatchedAddressandData
FastEraseandByte-Program:
-Sector-EraseTime:18ms(typical)
-Block-EraseTime:18ms(typical)
-Chip-EraseTime:70ms(typical)
-Byte-ProgramTime:14μs(typical)
-ChipRewriteTime:
15seconds(typical)forSST39LF/VF080
30seconds(typical)forSST39LF/VF016
AutomaticWriteTiming
-InternalV
PP
Generation
End-of-WriteDetection
-ToggleBit
-Data#Polling
CMOSI/OCompatibility
JEDECStandard
-FlashEEPROMPinoutsandcommandsets
PackagesAvailable
-40-PinTSOP(10mmx20mm)
-48-BallTFBGA(6mmx8mm)
PRODUCTDESCRIPTION
TheSST39LF/VF080andSST39LF/VF016devicesare
1Mx8/2Mx8CMOSMulti-PurposeFlash(MPF)
manufacturedwithSST’sproprietary,highperformance
CMOSSuperFlashtechnology.Thesplit-gatecellde-
signandthickoxidetunnelinginjectorattainbetter
reliabilityandmanufacturabilitycomparedwithalternate
approaches.TheSST39LF080/016write(Programor
Erase)witha3.0-3.6Vpowersupply.The
SST39VF080/016write(ProgramorErase)witha2.7-
3.6Vpowersupply.TheyconformtoJEDECstandard
pinoutsforx8memories.
FeaturinghighperformanceByte-Program,the
SST39LF/VF080andSST39LF/VF016devicesprovide
atypicalByte-Programtimeof14μsec.Thedevicesuse
ToggleBitorData#Pollingtoindicatethecompletionof
Programoperation.Toprotectagainstinadvertentwrite,
theyhaveon-chiphardwareandSoftwareDataProtec-
tionschemes.Designed,manufactured,andtestedfor
awidespectrumofapplications,thesedevicesare
offeredwithaguaranteedenduranceof10,000cycles.
Dataretentionisratedatgreaterthan100years.
TheSST39LF/VF080andSST39LF/VF016devicesare
suitedforapplicationsthatrequireconvenientandeco-
nomicalupdatingofprogram,configuration,ordata
memory.Forallsystemapplications,theysignificantly
improveperformanceandreliability,whileloweringpower
consumption.Theyinherentlyuselessenergyduring
EraseandProgramthanalternativeflashtechnologies.
Thetotalenergyconsumedisafunctionoftheapplied
voltage,current,andtimeofapplication.Sinceforany
givenvoltagerange,theSuperFlashtechnologyusesless
currenttoprogramandhasashortererasetime,thetotal
energyconsumedduringanyEraseorProgramoperation
islessthanalternativeflashtechnologies.Theyalso
improveflexibilitywhileloweringthecostforprogram,data,
andconfigurationstorageapplications.
TheSuperFlashtechnologyprovidesfixedEraseand
Programtimes,independentofthenumberofErase/
Programcyclesthathaveoccurred.Thereforethesys-
temsoftwareorhardwaredoesnothavetobemodified
orde-ratedasisnecessarywithalternativeflashtech-
nologies,whoseEraseandProgramtimesincrease
withaccumulatedErase/Programcycles.
Tomeethighdensity,surfacemountrequirements,the
SST39LF/VF080andSST39LF/VF016areofferedin
40-pinTSOPand48-ballTFBGApackaging.See
Figures1and2forpinouts.
DeviceOperation
Commandsareusedtoinitiatethememoryoperation
functionsofthedevice.Commandsarewrittentothe
deviceusingstandardmicroprocessorwritese-
quences.AcommandiswrittenbyassertingWE#low
whilekeepingCE#low.Theaddressbusislatchedon
thefallingedgeofWE#orCE#,whicheveroccurslast.
ThedatabusislatchedontherisingedgeofWE#or
CE#,whicheveroccursfirst.
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?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
TheSST39LF/VF080andSST39LF/VF016alsohave
theAutoLowPowermodewhichputsthedeviceina
nearstandbymodeafterdatahasbeenaccessedwitha
validReadoperation.ThisreducestheI
DD
activeread
currentfromtypically15mAtotypically4μA.TheAuto
LowPowermodereducesthetypicalI
DD
activeread
currenttotherangeof1mA/MHzofreadcycletime.The
deviceexitstheAutoLowPowermodewithanyaddress
transitionorcontrolsignaltransitionusedtoinitiate
anotherReadcycle,withnoaccesstimepenalty.Note
thatthedevicedoesnotenterAutoLowPowermode
afterpower-upwithCE#heldsteadilylowuntilthefirst
addresstransitionorCE#isdrivenhigh.
Read
TheReadoperationoftheSST39LF/VF080and
SST39LF/VF016iscontrolledbyCE#andOE#,bothhave
tobelowforthesystemtoobtaindatafromtheoutputs.
CE#isusedfordeviceselection.WhenCE#ishigh,the
chipisdeselectedandonlystandbypowerisconsumed.
OE#istheoutputcontrolandisusedtogatedatafromthe
outputpins.Thedatabusisinhighimpedancestatewhen
eitherCE#orOE#ishigh.RefertotheReadcycletiming
diagramforfurtherdetails(Figure3).
Byte-ProgramOperation
TheSST39LF/VF080andSST39LF/VF016arepro-
grammedonabyte-by-bytebasis.TheProgramoperation
consistsofthreesteps.Thefirststepisthethree-byteload
sequenceforSoftwareDataProtection.Thesecondstep
istoloadbyteaddressandbytedata.DuringtheByte-
Programoperation,theaddressesarelatchedonthe
fallingedgeofeitherCE#orWE#,whicheveroccurslast.
ThedataislatchedontherisingedgeofeitherCE#or
WE#,whicheveroccursfirst.Thethirdstepistheinternal
Programoperationwhichisinitiatedaftertherisingedge
ofthefourthWE#orCE#,whicheveroccursfirst.The
Programoperation,onceinitiated,willbecompletedwithin
20μs.SeeFigures4and5forWE#andCE#controlled
ProgramoperationtimingdiagramsandFigure16for
flowcharts.DuringtheProgramoperation,theonlyvalid
readsareData#PollingandToggleBit.Duringtheinternal
Programoperation,thehostisfreetoperformadditional
tasks.AnycommandsissuedduringtheinternalProgram
operationareignored.
Sector/Block-EraseOperation
TheSector-(orBlock-)Eraseoperationallowsthesys-
temtoerasethedeviceonasector-by-sector(orblock-
by-block)basis.TheSST39LF/VF080andSST39LF/
VF016offerbothSector-EraseandBlock-Erasemode.
Thesectorarchitectureisbasedonuniformsectorsize
of4KByte.TheBlock-Erasemodeisbasedonuniform
blocksizeof64KByte.TheSector-Eraseoperationis
initiatedbyexecutingasix-byte-commandsequence
withSector-Erasecommand(30H)andsectoraddress
(SA)inthelastbuscycle.TheBlock-Eraseoperationis
initiatedbyexecutingasix-byte-commandsequence
withBlock-Erasecommand(50H)andblockaddress
(BA)inthelastbuscycle.Thesectororblockaddressis
latchedonthefallingedgeofthesixthWE#pulse,while
thecommand(30Hor50H)islatchedontherisingedge
ofthesixthWE#pulse.TheinternalEraseoperation
beginsafterthesixthWE#pulse.TheEnd-of-Erase
operationcanbedeterminedusingeitherData#Polling
orToggleBitmethods.SeeFigures9and10fortiming
waveforms.AnycommandsissuedduringtheSector-or
Block-Eraseoperationareignored.
Chip-EraseOperation
TheSST39LF/VF080andSST39LF/VF016providea
Chip-Eraseoperation,whichallowstheusertoerasethe
entirememoryarraytothe“1”state.Thisisusefulwhen
theentiredevicemustbequicklyerased.
TheChip-Eraseoperationisinitiatedbyexecutingasix
bytecommandsequencewithChip-Erasecommand
(10H)ataddress5555Hinthelastbytesequence.The
Eraseoperationbeginswiththerisingedgeofthesixth
WE#orCE#,whicheveroccursfirst.DuringtheErase
operation,theonlyvalidreadisToggleBitorData#
Polling.SeeTable4forthecommandsequence,Figure
8fortimingdiagram,andFigure19fortheflowchart.Any
commandsissuedduringtheChip-Eraseoperationare
ignored.
WriteOperationStatusDetection
TheSST39LF/VF080andSST39LF/VF016providetwo
softwaremeanstodetectthecompletionofawrite(Pro-
gramorErase)cycle,inordertooptimizethesystemWrite
cycletime.Thesoftwaredetectionincludestwostatus
bits:Data#Polling(DQ
7
)andToggleBit(DQ
6
).TheEnd-
of-Writedetectionmodeisenabledaftertherisingedgeof
WE#,whichinitiatestheinternalProgramorEraseopera-
tion.
Theactualcompletionofthenonvolatilewriteisasyn-
chronouswiththesystem;therefore,eitheraData#
PollingorToggleBitreadmaybesimultaneouswiththe
completionoftheWritecycle.Ifthisoccurs,thesystem
maypossiblygetanerroneousresult,i.e.,validdatamay
appeartoconflictwitheitherDQ
7
orDQ
6
.Inorderto
preventspuriousrejection,ifanerroneousresultoccurs,
thesoftwareroutineshouldincludealooptoreadthe
accessedlocationanadditionaltwo(2)times.Ifboth
readsarevalid,thenthedevicehascompletedtheWrite
cycle,otherwisetherejectionisvalid.
3
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
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S71146396-211/00
Data#Polling(DQ
7
)
WhentheSST39LF/VF080andSST39LF/VF016arein
theinternalProgramoperation,anyattempttoreadDQ
7
willproducethecomplementofthetruedata.Oncethe
Programoperationiscompleted,DQ
7
willproducetrue
data.Thedeviceisthenreadyforthenextoperation.
DuringinternalEraseoperation,anyattempttoreadDQ
7
willproducea‘0’.OncetheinternalEraseoperationis
completed,DQ
7
willproducea‘1’.TheData#Pollingis
validaftertherisingedgeoffourthWE#(orCE#)pulsefor
Programoperation.ForSector-,Block-orChip-Erase,the
Data#PollingisvalidaftertherisingedgeofsixthWE#(or
CE#)pulse.SeeFigure6forData#Pollingtimingdiagram
andFigure17foraflowchart.
ToggleBit(DQ
6
)
DuringtheinternalProgramorEraseoperation,anycon-
secutiveattemptstoreadDQ
6
willproducealternating1’s
and0’s,i.e.,togglingbetween1and0.Whentheinternal
ProgramorEraseoperationiscompleted,theDQ
6
bitwill
stoptoggling.Thedeviceisthenreadyforthenextopera-
tion.TheToggleBitisvalidaftertherisingedgeoffourth
WE#(orCE#)pulseforProgramoperation.ForSector-,
Block-orChip-Erase,theToggleBitisvalidaftertherising
edgeofsixthWE#(orCE#)pulse.SeeFigure7forToggle
BittimingdiagramandFigure17foraflowchart.
DataProtection
TheSST39LF/VF080andSST39LF/VF016provideboth
hardwareandsoftwarefeaturestoprotectnonvolatiledata
frominadvertentwrites.
HardwareDataProtection
Noise/GlitchProtection:AWE#orCE#pulseoflessthan
5nswillnotinitiateaWritecycle.
V
DD
PowerUp/DownDetection:TheWriteoperationis
inhibitedwhenV
DD
islessthan1.5V.
WriteInhibitMode:ForcingOE#low,CE#high,orWE#
highwillinhibittheWriteoperation.Thispreventsinadvert-
entwritesduringpower-uporpower-down.
SoftwareDataProtection(SDP)
TheSST39LF/VF080andSST39LF/VF016providethe
JEDECapprovedSoftwareDataProtectionschemefor
alldataalterationoperations,i.e.,ProgramandErase.
AnyProgramoperationrequirestheinclusionofthe
three-bytesequence.Thethree-byteloadsequenceis
usedtoinitiatetheProgramoperation,providingoptimal
protectionfrominadvertentWriteoperations,e.g.,dur-
ingthesystempower-uporpower-down.AnyErase
operationrequirestheinclusionofsix-bytesequence.
TheSST39LF/VF080andSST39LF/VF016devicesare
shippedwiththeSoftwareDataProtectionpermanently
enabled.SeeTable4forthespecificsoftwarecommand
codes.DuringSDPcommandsequence,invalidcom-
mandswillabortthedevicetoreadmodewithinT
RC
.
CommonFlashMemoryInterface(CFI)
TheSST39LF/VF080andSST39LF/VF016alsocontain
theCFIinformationtodescribethecharacteristicsofthe
device.InordertoentertheCFIQuerymode,thesystem
mustwritethree-bytesequence,sameasproductID
entrycommandwith98H(CFIQuerycommand)to
address5555Hinthelastbytesequence.Oncethe
deviceenterstheCFIQuerymode,thesystemcanread
CFIdataattheaddressesgivenintables5through7.
ThesystemmustwritetheCFIExitcommandtoreturn
toReadmodefromtheCFIQuerymode.
ProductIdentification
TheProductIdentificationmodeidentifiesthedeviceas
theSST39LF080,SST39VF080,SST39LF016and
SST39VF016andmanufacturerasSST.Thismodemaybe
accessedbyhardwareorsoftwareoperations.Thehardware
operationistypicallyusedbyaprogrammertoidentifythe
correctalgorithmfortheSST39LF/VF080andSST39LF/
VF016.UsersmaywishtousetheSoftwareProductIdentifi-
cationoperationtoidentifythepart(i.e.,usingthedeviceID)
whenusingmultiplemanufacturersinthesamesocket.For
details,seeTable3forhardwareoperationorTable4for
softwareoperation,Figure11fortheSoftwareIDEntryand
ReadtimingdiagramandFigure18fortheSoftwareIDEntry
commandsequenceflowchart.
ProductIdentificationModeExit/CFIModeExit
InordertoreturntothestandardReadmode,the
SoftwareProductIdentificationmodemustbeexited.
ExitisaccomplishedbyissuingtheSoftwareIDExit
commandsequence,whichreturnsthedevicetothe
Readoperation.Thiscommandmayalsobeusedto
resetthedevicetotheReadmodeafteranyinadvertent
transientconditionthatapparentlycausesthedeviceto
behaveabnormally,e.g.,notreadcorrectly.Pleasenote
thattheSoftwareIDExit/CFIExitcommandisignored
duringaninternalProgramorEraseoperation.See
Table4forsoftwarecommandcodes,Figure13for
timingwaveformandFigure18foraflowchart.
TABLE1:PRODUCTIDENTIFICATION
AddressData
Manufacturer’sID0000HBFH
DeviceID
SST39LF/VF0800001HD8H
SST39LF/VF0160001HD9H
396PGMT1.2
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?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE1:PINASSIGNMENTSFOR40-PINTSOP
FUNCTIONALBLOCKDIAGRAM
SST39LF/VF080SST39LF/VF016
A16
A15
A14
A13
A12
A11
A9
A8
WE#
NC
NC
NC
A18
A7
A6
A5
A4
A3
A2
A1
A16
A15
A14
A13
A12
A11
A9
A8
WE#
NC
NC
NC
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A17
V
SS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
V
DD
V
DD
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
396ILLF01.2
StandardPinout
TopView
DieUp
SST39LF/VF160SST39LF/VF080
A17
V
SS
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
V
DD
V
DD
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
FIGURE2:PINASSIGNMENTSFOR48-BALLTFBGA
Y-Decoder
I/OBuffersandDataLatches
396ILLB1.2
AddressBuffer&Latches
X-Decoder
DQ
7
-DQ
0
Memory
Address
OE#
CE#
WE#
SuperFlash
Memory
ControlLogic
A14
A9
WE#
NC
A7
A3
A13
A8
NC
NC
A18
A4
A15
A11
NC
NC
A6
A2
A16
A12
NC
NC
A5
A1
A17
A19
DQ5
DQ2
DQ0
A0
NC
A10
NC
DQ3
NC
CE#
A20
DQ6
V
DD
V
DD
NC
OE#
V
SS
DQ7
DQ4
NC
DQ1
V
SS
396ILLF20.0
SST39LF/VF080
TOPVIEW(ballsfacingdown)
6
5
4
3
2
1
ABCDEFGH
A14
A9
WE#
NC
A7
A3
A13
A8
NC
NC
A18
A4
A15
A11
NC
NC
A6
A2
A16
A12
NC
NC
A5
A1
A17
A19
DQ5
DQ2
DQ0
A0
NC
A10
NC
DQ3
NC
CE#
A20
DQ6
V
DD
V
DD
NC
OE#
V
SS
DQ7
DQ4
A21
DQ1
V
SS
396ILLF21.0
SST39LF/VF016
TOPVIEW(ballsfacingdown)
6
5
4
3
2
1
ABCDEFGH
5
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
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3
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5
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7
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S71146396-211/00
TABLE3:OPERATIONMODESSELECTION
ModeCE#OE#WE#A9DQAddress
ReadV
IL
V
IL
V
IH
A
IN
D
OUT
A
IN
ProgramV
IL
V
IH
V
IL
A
IN
D
IN
A
IN
EraseV
IL
V
IH
V
IL
XXSectororblockaddress,
XXHforChip-Erase
StandbyV
IH
XXXHighZX
WriteInhibitXV
IL
XXHighZ/D
OUT
X
XXV
IH
XHighZ/D
OUT
X
ProductIdentification
HardwareModeV
IL
V
IL
V
IH
V
H
Manufacturer''sID(BFH)A
MS
(2)
-A
1
=V
IL
,A
0
=V
IL
DeviceID(1)A
20
(2)
-A
1
=V
IL
,A
0
=V
IH
SoftwareModeV
IL
V
IL
V
IH
A
IN
SeeTable4
Notes:(1)DeviceIDD8HforSST39LF/VF080andD9HforSST39LF/VF016
(2)AMS=Mostsignificantaddress
AMS=A19forSST39LF/VF080andA20forSST39LF/VF016.
396PGMT3.2
TABLE2:PINDESCRIPTION
SymbolPinNameFunctions
A
MS
-A
0
AddressInputsToprovidememoryaddresses.DuringSector-EraseA
MS
-A
12
address
lineswillselectthesector.DuringBlock-EraseA
MS
-A
16
addresslines
willselecttheblock.
DQ
7
-DQ
0
DataInput/outputTooutputdataduringReadcyclesandreceiveinputdataduringWrite
cycles.DataisinternallylatchedduringaWritecycle.Theoutputsarein
tri-statewhenOE#orCE#ishigh.
CE#ChipEnableToactivatethedevicewhenCE#islow.
OE#OutputEnableTogatethedataoutputbuffers.
WE#WriteEnableTocontroltheWriteoperations.
V
DD
PowerSupplyToprovidepowersupplyvoltage:3.0-3.6VforSST39LF080/016
2.7-3.6VforSST39VF080/016
VssGround
NCNoConnectionUnconnectedpins.
Note:AMS=Mostsignificantaddress
AMS=A19forSST39LF/VF080andA20forSST39LF/VF016.
396PGMT2.2
6
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
TABLE5:CFIQUERYIDENTIFICATIONSTRING
1
FORSST39LF/VF080ANDSST39LF/VF016
AddressDataData
10H51H
11H52HQueryUniqueASCIIstring“QRY”
12H59H
13H01HPrimaryOEMcommandset
14H07H
15H00HAddressforPrimaryExtendedTable
16H00H
17H00HAlternateOEMcommandset(00H=noneexists)
18H00H
19H00HAddressforAlternateOEMextendedTable(00H=noneexits)
1AH00H
Note1:RefertoCFIpublication100formoredetails.
396PGMT5.3
TABLE4:SOFTWARECOMMANDSEQUENCE
Command1stBus2ndBus3rdBus4thBus5thBus6thBus
SequenceWriteCycleWriteCycleWriteCycleWriteCycleWriteCycleWriteCycle
Addr
(1)
DataAddr
(1)
DataAddr
(1)
DataAddr
(1)
DataAddr
(1)
DataAddr
(1)
Data
Byte-Program5555HAAH2AAAH55H5555HA0HWA
(3)
Data
Sector-Erase5555HAAH2AAAH55H5555H80H5555HAAH2AAAH55HSA
x
(2)
30H
Block-Erase5555HAAH2AAAH55H5555H80H5555HAAH2AAAH55HBA
x
(2)
50H
Chip-Erase5555HAAH2AAAH55H5555H80H5555HAAH2AAAH55H5555H10H
SoftwareIDEntry5555HAAH2AAAH55H5555H90H
CFIQueryEntry5555HAAH2AAAH55H5555H98H
SoftwareIDExit/XXHF0H
CFIExit
SoftwareIDExit/5555HAAH2AAAH55H5555HF0H
CFIExit
Notes:
(1)
AddressformatA14-A0(Hex),
AddressesA15,A16,A17,A18andA19are“Don’tCare”forCommandsequenceforSST39LF/VF080.
AddressesA15,A16,A17,A18,A19andA20are“Don’tCare”forCommandsequenceforSST39LF/VF016.
(2)
SA
x
forSector-Erase;usesA
MS
-A
12
addresslines
BA
x
,forBlock-Erase;usesA
MS
-A
16
addresslines
A
MS
=Mostsignificantaddress
AMS=A19forSST39LF/VF080andA20forSST39LF/VF016.
(3)
WA=Programbyteaddress
(4)
BothSoftwareIDExitoperationsareequivalent
NotesforSoftwareIDEntryCommandSequence
1.WithAMS-A1=0;SSTManufacturer''sID=BFH,isreadwithA0=0,
SST39LF/VF080DeviceID=D8H,isreadwithA
0
=1.
SST39LF/VF016DeviceID=D9H,isreadwithA
0
=1.
A
MS
=Mostsignificantaddress
AMS=A19forSST39LF/VF080andA20forSST39LF/VF016.
2.ThedevicedoesnotremaininSoftwareProductIDModeifpowereddown.
396PGMT4.1
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?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
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S71146396-211/00
TABLE7B:DEVICEGEOMETRYINFORMATIONFORSST39LF/VF016
AddressDataData
27H15HDevicesize=2
N
Byte(15H=21;2
21
=2MBytes)
28H00HFlashDeviceInterfacedescription;0000H=x8-onlyasynchronousinterface
29H00H
2AH00HMaximumnumberofbyteinmulti-bytewrite=2
N
(00H=notsupported)
2BH00H
2CH02HNumberofEraseSector/Blocksizessupportedbydevice
2DHFFHSectorInformation(y+1=Numberofsectors;zx256B=sectorsize)
2EH01Hy=511+1=512sectors(01FFH=511)
2FH10H
30H00Hz=16x256Bytes=4KBytes/sector(0010H=16)
31H1FHBlockInformation(y+1=Numberofblocks;zx256B=blocksize)
32H00Hy=31+1=32blocks(001FH=31)
33H00H
34H01Hz=256x256Bytes=64KBytes/block(0100H=256)
396PGMT7b.1
TABLE7A:DEVICEGEOMETRYINFORMATIONFORSST39LF/VF080
AddressDataData
27H14HDevicesize=2
N
Bytes(14H=20;2
20
=1MBytes)
28H00HFlashDeviceInterfacedescription;0000H=x8-onlyasynchronousinterface
29H00H
2AH00HMaximumnumberofbyteinmulti-bytewrite=2
N
(00H=notsupported)
2BH00H
2CH02HNumberofEraseSector/Blocksizessupportedbydevice
2DHFFHSectorInformation(y+1=Numberofsectors;zx256B=sectorsize)
2EH00Hy=255+1=256sectors(00FFH=255)
2FH10H
30H00Hz=16x256Bytes=4KBytes/sector(0010H=16)
31H0FHBlockInformation(y+1=Numberofblocks;zx256B=blocksize)
32H00Hy=15+1=16blocks(000FH=15)
33H00H
34H01Hz=256x256Bytes=64KBytes/block(0100H=256)
396PGMT7a.0
396PGMT6.1
TABLE6:SYSTEMINTERFACEINFORMATIONFORSST39LF/VF080ANDSST39LF/VF016
AddressDataData
1BH27H
1)
V
DD
Min.(Program/Erase)
30H
(1)
DQ7-DQ4:Volts,DQ3-DQ0:100millivolts
1CH36HV
DD
Max.(Program/Erase)
DQ7-DQ4:Volts,DQ3-DQ0:100millivolts
1DH00HV
PP
min.(00H=noV
PP
pin)
1EH00HV
PP
max.(00H=noV
PP
pin)
1FH04HTypicaltimeoutforByte-Program2
N
μs(2
4
=16μs)
20H00HTypicaltimeoutformin.sizebufferprogram2
N
μs
(00H=notsupported)
21H04HTypicaltimeoutforindividualSector/Block-Erase2
N
ms(2
4
=16ms)
22H06HTypicaltimeoutforChip-Erase2
N
ms(2
6
=64ms)
23H01HMaximumtimeoutforByte-Program2
N
timestypical(2
1
x2
4
=32μs)
24H00HMaximumtimeoutforbufferprogram2
N
timestypical
25H01HMaximumtimeoutforindividualSector/Block-Erase2
N
timestypical
(2
1
x2
4
=32ms)
26H01HMaximumtimeoutforChip-Erase2
N
timestypical(2
1
x2
6
=128ms)
Note(1)30HforSST39LF080/016and27HforSST39VF080/016
8
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
AbsoluteMaximumStressRatings(Appliedconditionsgreaterthanthoselistedunder“AbsoluteMaximumStress
Ratings”maycausepermanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthedevice
attheseconditionsorconditionsgreaterthanthosedefinedintheoperationalsectionsofthisdatasheetisnotimplied.
Exposuretoabsolutemaximumstressratingconditionsmayaffectdevicereliability.)
TemperatureUnderBias.................................................................................................................-55°Cto+125°C
StorageTemperature......................................................................................................................-65°Cto+150°C
D.C.VoltageonAnyPintoGroundPotential............................................................................-0.5VtoV
DD
+0.5V
TransientVoltage(<20ns)onAnyPintoGroundPotential........................................................-1.0VtoV
DD
+1.0V
VoltageonA
9
PintoGroundPotential................................................................................................-0.5Vto13.2V
PackagePowerDissipationCapability(Ta=25°C)...........................................................................................1.0W
SurfaceMountLeadSolderingTemperature(3Seconds)...............................................................................240°C
OutputShortCircuitCurrent
(1)
.................................................................................................................................................................50mA
Note:
(1)
Outputsshortedfornomorethanonesecond.Nomorethanoneoutputshortedatatime.
ACCONDITIONSOFTEST
InputRise/FallTime.........5ns
OutputLoad.....................C
L
=30pFforSST39LF080/016
........................................C
L
=100pFforSST39VF080/016
SeeFigures14and15
OPERATINGRANGEFORSST39VF080/016
RangeAmbientTempV
DD
Commercial0°Cto+70°C2.7-3.6V
Industrial-40°Cto+85°C2.7-3.6V
OPERATINGRANGEFORSST39LF080/016
RangeAmbientTempV
DD
Commercial0°Cto+70°C3.0-3.6V
9
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
396PGMT10.1
TABLE9:RECOMMENDEDSYSTEMPOWER-UPTIMINGS
SymbolParameterMinimumUnits
T
PU-READ
(1)
Power-uptoReadOperation100μs
T
PU-WRITE
(1)
Power-uptoProgram/Erase100μs
Operation
Note:(1)Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
396PGMT11.0
TABLE10:CAPACITANCE(Ta=25°C,f=1Mhz,otherpinsopen)
ParameterDescriptionTestConditionMaximum
C
I/O
(1)
I/OPinCapacitanceV
I/O
=0V12pF
C
IN
(1)
InputCapacitanceV
IN
=0V6pF
Note:(1)Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
TABLE8:DCOPERATINGCHARACTERISTICSVDD=3.0-3.6VFORSST39LF080/016AND2.7-3.6VFORSST39VF080/016
Limits
SymbolParameterMinMaxUnitsTestConditions
I
DD
PowerSupplyCurrentAddressinput=V
IL
/V
IH
,atf=1/T
RC
Min.,
V
DD
=V
DD
Max.
Read20mACE#=OE#=V
IL,
WE#=V
IH
,allI/Osopen
ProgramandErase25mACE#=WE#=V
IL,
OE#=V
IH
I
SB
StandbyV
DD
Current20μACE#=V
IHC
,V
DD
=V
DD
Max.
I
ALP
AutoLowPowerCurrent20μACE#=V
ILC
,V
DD
=V
DD
Max.All
inputs=V
IHC
orV
ILC
WE#=V
IHC
I
LI
InputLeakageCurrent1μAV
IN
=GNDtoV
DD
,V
DD
=V
DD
Max.
I
LO
OutputLeakageCurrent1μAV
OUT
=GNDtoV
DD
,V
DD
=V
DD
Max.
V
IL
InputLowVoltage0.8VV
DD
=V
DD
Min.
V
ILC
InputLowVoltage(CMOS)0.3VV
DD
=V
DD
Max.
V
IH
InputHighVoltage0.7V
DD
VV
DD
=V
DD
Max.
V
IHC
InputHighVoltage(CMOS)V
DD
-0.3VV
DD
=V
DD
Max.
V
OL
OutputLowVoltage0.2VI
OL
=100μA,V
DD
=V
DD
Min.
V
OH
OutputHighVoltageV
DD
-0.2VI
OH
=-100μA,V
DD
=V
DD
Min.
V
H
SupervoltageforA
9
pin11.412.6VCE#=OE#=V
IL
,WE#=V
IH
I
H
SupervoltageCurrent200μACE#=OE#=V
IL
,WE#=V
IH
,A
9
=V
H
Max.
forA
9
pin
396PGMT9.1
TABLE11:RELIABILITYCHARACTERISTICS
SymbolParameterMinimumSpecificationUnitsTestMethod
N
END
(1)
Endurance10,000CyclesJEDECStandardA117
T
DR
(1)
DataRetention100YearsJEDECStandardA103
V
ZAP_HBM
(1)
ESDSusceptibility2000VoltsJEDECStandardA114
HumanBodyModel
V
ZAP_MM
(1)
ESDSusceptibility200VoltsJEDECStandardA115
MachineModel
I
LTH
(1)
LatchUp100+I
DD
mAJEDECStandard78
Note:(1)Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
396PGMT12.0
10
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
TABLE13:PROGRAM/ERASECYCLETIMINGPARAMETERS
SymbolParameterMinMaxUnits
T
BP
Byte-ProgramTime20μs
T
AS
AddressSetupTime0ns
T
AH
AddressHoldTime30ns
T
CS
WE#andCE#SetupTime0ns
T
CH
WE#andCE#HoldTime0ns
T
OES
OE#HighSetupTime0ns
T
OEH
OE#HighHoldTime10ns
T
CP
CE#PulseWidth40ns
T
WP
WE#PulseWidth40ns
T
WPH(1)
WE#PulseWidthHigh30ns
T
CPH(1)
CE#PulseWidthHigh30ns
T
DS
DataSetupTime30ns
T
DH(1)
DataHoldTime0ns
T
IDA(1)
SoftwareIDAccessandExitTime150ns
T
SE
Sector-Erase25ms
T
BE
Block-Erase25ms
T
SCE
Chip-Erase100ms
Note:(1)Thisparameterismeasuredonlyforinitialqualificationandafterthedesignorprocesschangethatcouldaffectthisparameter.
396PGMT14.0
ACCHARACTERISTICS
TABLE12:READCYCLETIMINGPARAMETERS
VDD=3.0-3.6VFORSST39LF080/016AND2.7-3.6VFORSST39VF080/016
SymbolParameterMinMaxMinMaxMinMaxUnits
T
RC
ReadCycleTime557090ns
T
CE
ChipEnableAccessTime557090ns
T
AA
AddressAccessTime557090ns
T
OE
OutputEnableAccessTime303545ns
T
CLZ
(1)
CE#LowtoActiveOutput000ns
T
OLZ
(1)
OE#LowtoActiveOutput000ns
T
CHZ
(1)
CE#HightoHigh-ZOutput152030ns
T
OHZ
(1)
OE#HightoHigh-ZOutput152030ns
T
OH
(1)
OutputHoldfromAddress000ns
Change
396PGMT13.2
SST39VF080/016-70SST39LF080/016-55SST39VF080/016-90
11
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE3:READCYCLETIMINGDIAGRAM
FIGURE4:WE#CONTROLLEDPROGRAMCYCLETIMINGDIAGRAM
396ILLF02.1
ADDRESSA
MS-0
DQ
7-0
WE#
OE#
CE#
T
CE
T
RC
T
AA
T
OE
T
OLZV
IH
HIGH-Z
T
CLZ
T
OH
T
CHZ
HIGH-Z
DATAVALIDDATAVALID
T
OHZ
Note:A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
396ILLF03.1
Note:A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
ADDRESSA
MS-0
DQ
7-0
T
DH
T
WPH
T
DS
T
WP
T
AH
T
AS
T
CH
T
CS
CE#
SW0SW1SW2
55552AAA5555ADDR
AA55A0DATA
INTERNALPROGRAMOPERATIONSTARTS
BYTE
(ADDR/DATA)
OE#
WE#
T
BP
12
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE5:CE#CONTROLLEDPROGRAMCYCLETIMINGDIAGRAM
FIGURE6:DATA#POLLINGTIMINGDIAGRAM
396ILLF04.1
ADDRESSA
MS-0
DQ
7-0
T
DH
T
CPH
T
DS
T
CP
T
AH
T
AS
T
CH
T
CS
WE#
SW0SW1SW2
55552AAA5555ADDR
AA55A0DATA
INTERNALPROGRAMOPERATIONSTARTS
BYTE
(ADDR/DATA)
OE#
CE#
T
BP
Note:A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
396ILLF05.1
Note:A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
ADDRESSA
MS-0
DQ
7
DATADATA#DATA#DATA
WE#
OE#
CE#
T
OEH
T
OE
T
CE
T
OES
13
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE7:TOGGLEBITTIMINGDIAGRAM
FIGURE8:WE#CONTROLLEDCHIP-ERASETIMINGDIAGRAM
396ILLF06.1
ADDRESSA
MS-0
DQ
6
WE#
OE#
CE#
T
OET
OEH
T
CE
T
OES
TWOREADCYCLES
WITHSAMEOUTPUTS
Note:A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
396ILLF08.1
ADDRESSA
MS-0
DQ
7-0
WE#
SW0SW1SW2SW3SW4SW5
55552AAA2AAA55555555
551055AA80AA
5555
OE#
CE#
SIX-BYTECODEFORCHIP-ERASE
Note:ThedevicealsosupportsCE#controlledChip-Eraseoperation.TheWE#andCE#signalsare
interchangeableaslongasminimumtimingsaremet.(SeeTable13)
A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
T
SCE
T
WP
14
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE10:WE#CONTROLLEDSECTOR-ERASETIMINGDIAGRAM
FIGURE9:WE#CONTROLLEDBLOCK-ERASETIMINGDIAGRAM
396ILLF09.1
Note:ThedevicealsosupportsCE#controlledBlock-Eraseoperation.TheWE#andCE#signalsare
interchangeableaslongasminimumtimingsaremet.(SeeTable13)
A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
ADDRESSA
MS-0
DQ
7-0
WE#
SW0SW1SW2SW3SW4SW5
55552AAA2AAA55555555
555055AA80AA
BA
X
OE#
CE#
SIX-BYTECODEFORBLOCK-ERASE
T
BE
T
WP
396ILLF10.1
ADDRESSA
MS-0
Note:ThedevicealsosupportsCE#controlledSector-Eraseoperation.TheWE#andCE#signalsare
interchangeableaslongasminimumtimingsaremet.(SeeTable13)
A
MS
=Mostsignificantaddress
A
MS
=A
19
forSST39LF/VF080andA
20
forSST39LF/VF016.
DQ
7-0
WE#
SW0SW1SW2SW3SW4SW5
55552AAA2AAA55555555
553055AA80AA
SA
X
OE#
CE#
SIX-BYTECODEFORSECTOR-ERASE
T
SE
T
WP
15
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE11:SOFTWAREIDENTRYANDREAD
FIGURE12:CFIQUERYENTRYANDREAD
396ILLF12.0
ADDRESSA
14-0
T
IDA
DQ
7-0
WE#
SW0SW1SW2
55552AAA5555
OE#
CE#
THREE-BYTESEQUENCEFOR
CFIQUERYENTRY
T
WP
T
WPH
T
AA
55AA98
396ILLF11.3
ADDRESSA
14-0
T
IDA
DQ
7-0
WE#
SW0SW1SW2
55552AAA555500000001
OE#
CE#
THREE-BYTESEQUENCEFOR
SOFTWAREIDENTRY
T
WP
T
WPH
T
AA
BFDeviceID55AA90
Note:DeviceID=D9HforSST39LF/VF016
D8HforSST39LF/VF080
16
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE13:SOFTWAREIDEXIT/CFIEXIT
396ILLF13.0
ADDRESSA
14-0
DQ
7-0
T
IDA
T
WP
T
WHP
WE#
SW0SW1SW2
55552AAA5555
THREE-BYTESEQUENCEFOR
SOFTWAREIDEXITANDRESET
OE#
CE#
AA55F0
17
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE14:ACINPUT/OUTPUTREFERENCEWAVEFORMS
FIGURE15:ATESTLOADEXAMPLE
ACtestinputsaredrivenatV
IHT
(0.9V
DD
)foralogic“1”andV
ILT
(0.1V
DD
)foralogic“0”.Measurementreferencepoints
forinputsandoutputsareV
IT
(0.5V
DD
)andV
OT
(0.5V
DD
).Inputsriseandfalltimes(10%c17190%)are<5ns.
Note:VIT–VINPUTTest
VOT–VOUTPUTTest
VIHT–VINPUTHIGHTest
VILT–VINPUTLOWTest
396ILLF14.1
REFERENCEPOINTSOUTPUTINPUT
V
IT
V
IHT
V
ILT
V
OT
396ILLF15.1
TOTESTER
TODUT
C
L
18
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE16:BYTE-PROGRAMALGORITHM
396ILLF16.1
Start
Loaddata:AAH
Address:5555H
Loaddata:55H
Address:2AAAH
Loaddata:A0H
Address:5555H
LoadByte
Address/Byte
Data
Waitforendof
Program(T
BP
,
Data#Polling
bit,orTogglebit
operation)
Program
Completed
19
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE17:WAITOPTIONS
396ILLF17.0
WaitT
BP
,
T
SCE,
T
SE
or
T
BE
Program/Erase
Initiated
InternalTimer
ToggleBit
Yes
Yes
No
No
Program/Erase
Completed
DoesDQ
6
match?
Readsame
byte
Data#Polling
Program/Erase
Completed
Program/Erase
Completed
Readbyte
IsDQ
7
=
truedata?
ReadDQ
7
Program/Erase
Initiated
Program/Erase
Initiated
20
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
FIGURE18:SOFTWAREPRODUCTID/CFICOMMANDFLOWCHARTS
396ILLF18.1
Loaddata:AAH
Address:5555H
SoftwareProductIDEntry
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:90H
Address:5555H
WaitT
IDA
ReadSoftwareID
Loaddata:AAH
Address:5555H
CFIQueryEntry
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:98H
Address:5555H
WaitT
IDA
ReadCFIdata
Loaddata:AAH
Address:5555H
SoftwareIDExit/CFIExit
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:F0H
Address:5555H
Loaddata:F0H
Address:XXH
Returntonormal
operation
WaitT
IDA
WaitT
IDA
Returntonormal
operation
21
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
FIGURE19:ERASECOMMANDSEQUENCE
396ILLF19.1
Loaddata:AAH
Address:5555H
Chip-Erase
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:80H
Address:5555H
Loaddata:55H
Address:2AAAH
Loaddata:10H
Address:5555H
Loaddata:AAH
Address:5555H
WaitT
SCE
Chiperased
toFFH
Loaddata:AAH
Address:5555H
Sector-Erase
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:80H
Address:5555H
Loaddata:55H
Address:2AAAH
Loaddata:30H
Address:SA
X
Loaddata:AAH
Address:5555H
WaitT
SE
Sectorerased
toFFH
Loaddata:AAH
Address:5555H
Block-Erase
CommandSequence
Loaddata:55H
Address:2AAAH
Loaddata:80H
Address:5555H
Loaddata:55H
Address:2AAAH
Loaddata:50H
Address:BA
X
Loaddata:AAH
Address:5555H
WaitT
BE
Blockerased
toFFH
22
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
DeviceSpeedSuffix1Suffix2
SST39xFxxx-XXX-XX-XX
PackageModifier
I=40pins
K=48pins
Numeric=Diemodifier
PackageType
E=TSOP(10mmx20mm)
B2=TFBGA(6mmx8mm)
TemperatureRange
C=Commercial=0°Cto+70°C
I=Industrial=-40°Cto+85°C
MinimumEndurance
4=10,000cycles
ReadAccessSpeed
55=55ns
70=70ns
90=90ns
DeviceDensity
080=8Megabit
016=16Megabit
Voltage
L=3.0-3.6V
V=2.7-3.6V
SST39LF080Validcombinations
SST39LF080-55-4C-EISST39LF080-55-4C-B2K
SST39VF080Validcombinations
SST39VF080-70-4C-EISST39VF080-70-4C-B2K
SST39VF080-90-4C-EISST39VF080-90-4C-B2K
SST39VF080-90-4I-EISST39VF080-90-4I-B2K
SST39LF016Validcombinations
SST39VF016-55-4C-EISST39VF016-55-4C-B2K
SST39VF016Validcombinations
SST39VF016-70-4C-EISST39VF016-70-4C-B2K
SST39VF016-90-4C-EISST39VF016-90-4C-B2K
SST39VF016-90-4I-EISST39VF016-90-4I-B2K
Example:Validcombinationsarethoseproductsinmassproductionorwillbeinmassproduction.ConsultyourSSTsales
representativetoconfirmavailabilityofvalidcombinationsandtodetermineavailabilityofnewcombinations.
23
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
S71146396-211/00
PACKAGINGDIAGRAMS
40-PINTHINSMALLOUTLINEPACKAGE(TSOP)10MMX20MM
SSTPACKAGECODE:EI
40.TSOP-EI-ILL.3
Note:1.ComplieswithJEDECpublication95MO-142CDdimensions,althoughsomedimensionsmaybemorestringent.
2.Alllineardimensionsareinmillimeters(min/max).
3.Coplanarity:0.1(±.05)mm.
10.10
9.90
.270
.170
1.05
0.95
.50
BSC
0.15
0.05
18.50
18.30
20.20
19.80
0.70
0.50
PIN#1IDENTIFIER
24
?2000SiliconStorageTechnology,Inc.
8Mbit/16MbitMulti-PurposeFlash
SST39LF080/SST39LF016/SST39VF080/SST39VF016
DataSheet
S71146396-211/00
SiliconStorageTechnology,Inc.1171SonoraCourtSunnyvale,CA94086Telephone408-735-9110Fax408-735-9036
www.SuperFlash.comorwww.ssti.comLiteratureFaxBack888-221-1178,International732-544-2873
A1CORNER
HGFEDCBAABCDEFGH
BOTTOMVIEWTOPVIEW
SIDEVIEW
6
5
4
3
2
1
6
5
4
3
2
1
SEATINGPLANE
0.23±0.04
1.10±0.10
0.15
6.00±0.20
0.335±0.035
(48X)
A1CORNER
8.00±0.20
0.80
4.00
0.80
5.60
48baTFBGA.B2K.6x8-ILL.1
Note:1.ComplieswiththegeneralrequirementsofJEDECpublication95MO-210,althoughsomedimensionsmaybemorestringent.
(Thisspecificoutlinevarianthasnotyetbeenregistered)
2.Alllineardimensionsareinmillimeters(min/max).
3.Coplanarity:0.1(±.05)mm.
48-BALLTHINPROFILEFINE-PITCHBALLGRIDARRAY(TFBGA)6MMX8MM
SSTPACKAGECODE:B2K
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