Dated:14/01/2013Rev:01
?
SEMTECHELECTRONICSLTD.
SubsidiaryofSino-TechInternational(BVI)Limited
1N4148
SiliconEpitaxialPlanarSwitchingDiode
Applications
?High-speedswitching
ThisdiodeisalsoavailableinMiniMELFcase
withthetypedesignationLL4148
AbsoluteMaximumRatings(T
a
=25℃)
ParameterSymbolValueUnit
PeakReverseVoltageV
RM
100V
ReverseVoltageV
R
75V
AverageRectifiedForwardCurrentI
F(AV)
200mA
Non-repetitivePeakForwardSurgeCurrentatt=1s
att=1ms
att=1μs
I
FSM
0.5
1
4
A
PowerDissipationP
tot
500
1)
mW
JunctionTemperatureT
j
200℃
StorageTemperatureRangeT
stg
-65to+200℃
1)
Validprovidedthatleadsatadistanceof8mmfromcasearekeptatambienttemperature.
Max.2.9
Max.1.9
GlassCaseDO-34
Max.0.45
Min.27.5
Min.27.5
XXX
CathodeBand
PartNo.
Dimensionsinmm
Black
BlackMax.3.9
Max.1.9
GlassCaseDO-35
Max.0.5
Min.27.5
Min.27.5
XXX
CathodeBand
PartNo.
ST"ST"Brand
Dimensionsinmm
Black
Black
Black
Dated:14/01/2013Rev:01
?
SEMTECHELECTRONICSLTD.
SubsidiaryofSino-TechInternational(BVI)Limited
1N4148
CharacteristicsatT
a
=25℃
ParameterSymbolMin.Max.Unit
ReverseBreakdownVoltage
atI
R
=100μA
atI
R
=5μA
V
(BR)R
V
(BR)R
100
75
-
-
V
V
ForwardVoltage
atI
F
=10mA
V
F
-1V
LeakageCurrent
atV
R
=20V
atV
R
=75V
atV
R
=20V,T
j
=150℃
I
R
I
R
I
R
-
-
-
25
5
50
nA
μA
μA
Capacitance
atV
R
=0,f=1MHz
C
tot
-4pF
VoltageRisewhenSwitchingON
testedwith50mAForwardPulses
tp=0.1s,RiseTime<30ns,fp=5to100KHz
V
fr
-2.5V
ReverseRecoveryTime
atI
F
=10mAtoI
R
=1mA,Irr=0.1xI
R,
V
R
=6V,
R
L
=100?
t
rr
-4ns
ThermalResistanceJunctiontoAmbientAir
R
thA
-0.35
1)
K/mW
RectificationEfficiency
atf=100MHz,V
RF
=2V
η
V
0.45--
1)
Validprovidedthatleadsatadistanceof8mmfromcasearekeptatambienttemperature.
~
~
~
2
n
F
5
K
RectificationEfficiencyMeasurementCircuit
6
0
V
R
F
=
2
V
V
o
Dated:14/01/2013Rev:01
?
SEMTECHELECTRONICSLTD.
SubsidiaryofSino-TechInternational(BVI)Limited
1N4148
Ctot(VR)
Ctot(0V)
100
0
0
200
300
400
Ptot
600
500
700
100200C
Tamb
o
0.7
0
20468
VR
0.8
0.9
1.0
10V
Admissiblepowerdissipation
versusambienttemperature
Validprovidedthatleadsatadistanceof8mmfromcase
arekeptatambienttemperature
900
800
1000
mW
1N4148
Tj=25C
f=1MHz
1N4148
Relativecapacitance
versusreversevoltage
1.1
o
1N4148
VR=20V
Tj
0
5
2
10
5
2
1
10
2
100
Leakagecurrent
versusjunctiontemperature
nA
5
4
3
2
5
2
IR
10
10
o
200C
-2
10
0
-1
10
1
VF
12V
Forwardcharacteristics
iF
10
2
10
10
3
Tj=25C
Tj=100C
o
o
1N4148
mA
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