6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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HighSpeedOptocoupler,SingleandDual,10MBd
DESCRIPTION
The6N137,VO2601,andVO2611aresinglechannel
10MBdoptocouplersutilizingahighefficientinputLED
coupledwithanintegratedopticalphotodiodeICdetector.
ThedetectorhasanopendrainNMOS-transistoroutput,
providinglessleakagecomparedtoanopencollector
Schottkyclampedtransistoroutput.TheVO2630,VO2631,
andVO4661aredualchannel10MBdoptocouplers.Forthe
singlechanneltype,anenablefunctiononpin7allowsthe
detectortobestrobed.Theinternalshieldprovidesa
guaranteedcommonmodetransientimmunityof5kV/μsfor
theVO2601andVO2631and15kV/μsfortheVO2611and
VO4661.Theuseofa0.1μFbypasscapacitorconnected
betweenpin5and8isrecommended.
FEATURES
?ChoiceofCMRperformanceof15kV/μs,
5kV/μs,and1000V/μs
?Highspeed:10MBdtypical
?+5VCMOScompatibility
?Puretinleads
?GuaranteedACandDCperformanceover
temperature
?MeetsIEC60068-2-42(SO
2
)andIEC60068-2-43(H
2
S)
requirements
?Lowinputcurrentcapabilityof5mA
?Materialcategorization:fordefinitionsofcompliance
pleaseseewww.vishay.com/doc?99912
APPLICATIONS
?Microprocessorsysteminterface
?PLC,ATEinput/outputisolation
?Computerperipheralinterface
?Digitalfieldbusisolation:CC-link,DeviceNet,profibus,SDS
?HighspeedA/DandD/Aconversion
?ACplasmadisplaypanellevelshifting
?Multiplexeddatatransmission
?Digitalcontrolpowersupply
?Groundloopelimination,noiseisolation
AGENCYAPPROVALS
?UL1577
?cUL
?DINEN60747-5-5(VDE0884-5)availablewithoption1
?BSEN60950-1
?CQCGB8898-2011,GB4943.1-2011
1
2
3
4
8
7
6
5
A1
C1
C2
A2
V
CC
V
O1
V
O2
GND
Dualchannel
1
2
3
4
8
7
6
5
NC
A
C
NC
V
CC
V
E
V
O
GND
Singlechannel
6N137,VO2601,VO2611
VO2630,VO2631,VO4661
ORDERINGINFORMATION
VO2601-X0##T
PARTNUMBERPACKAGEOPTIONTAPE
AND
REEL
AGENCYCERTIFIED/PACKAGE
CHANNELS1CHANNELS2
CMR(V/μs)CMR(V/μs)
BSI,UL,cUL10005000150001000500015000
DIP-86N137VO2601VO2611VO2630VO2631VO4661
DIP-8,400mil(option6)6N137-X006VO2601-X006VO2611-X006VO2630-X006VO2631-X006VO4661-X006
SMD-8(option7)6N137-X007TVO2601-X007TVO2611-X007TVO2630-X007TVO2631-X007TVO4661-X007T
SMD-8(option9)6N137-X009T--VO2630-X009T--
VDE,BSI,UL,cUL10005000150001000500015000
DIP-8,400mil(option6)-VO2601-X016VO2611-X016-VO2631-X016-
SMD-8(option7)-VO2601-X017TVO2611-X017T-VO2631-X017T-
>0.1mm
10.16mm
>0.7mm
7.62mm
DIP-8
Option7
Option6
Option9
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Note
?Stressesinexcessoftheabsolutemaximumratingscancausepermanentdamagetothedevice.Functionaloperationofthedeviceisnot
impliedattheseoranyotherconditionsinexcessofthosegivenintheoperationalsectionsofthisdocument.Exposuretoabsolute
maximumratingsforextendedperiodsofthetimecanadverselyaffectreliability.
TRUTHTABLE(positivelogic)
LEDENABLEOUTPUT
OnHL
OffHH
OnLH
OffLH
OnNCL
OffNCH
ABSOLUTEMAXIMUMRATINGS(T
amb
=25°C,unlessotherwisespecified)
PARAMETERCONDITIONSSYMBOLVALUEUNIT
INPUT
Averageforwardcurrent(singlechannel)I
F
20mA
Averageforwardcurrent
(perchannelfordualchannel)
I
F
15mA
ReverseinputvoltageV
R
5V
EnableinputvoltageV
E
V
CC
+0.5VV
EnableinputcurrentI
E
5mA
Surgecurrentt=100μsI
FSM
200mA
Outputpowerdissipation
(singlechannel)
P
diss
35mW
Outputpowerdissipation(perchannelfor
dualchannel)
P
diss
25mW
OUTPUT
Supplyvoltage1minmaximumV
CC
7V
OutputcurrentI
O
50mA
OutputvoltageV
O
Outputpowerdissipation(singlechannel)P
diss
85mW
Outputpowerdissipation(perchannelfor
dualchannel)
P
diss
60mW
COUPLER
StoragetemperatureT
stg
-55to+150°C
OperatingtemperatureT
amb
-40to+100°C
Leadsoldertemperaturefor10s260°C
Solderreflowtemperature260°C
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Fig.1-TotalPowerDissipationvs.AmbientTemperature
(singlechannel)
Fig.2-TotalPowerDissipationvs.AmbientTemperature
(dualchannel)
Fig.3-ForwardCurrentvs.AmbientTemperature
(singlechannel)
Fig.4-ForwardCurrentvs.AmbientTemperature
(dualchannel)
0
20
40
60
80
100
025507510125
P
tot
-TotalPowerDi
ss
ipation(mW)
T
amb
-AmbientTemperature(°C)
Output
Input
0
20
40
60
80
100
025507510125
P
tot
-TotalPowerDi
ss
ipation(mW)
T
amb
-AmbientTemperature(°C)
Output
Input
025507510125
I
F
-
Forw
a
rd
Current
(mA)
T
amb
-AmbientTemperature(°C)
0
5
10
15
20
25
30
025507510125
I
F
-
Forw
a
rd
Current
(mA)
T
amb
-AmbientTemperature(°C)
0
5
10
15
20
25
30
RECOMMENDEDOPERATINGCONDITIONS
PARAMETERTESTCONDITIONSYMBOLMIN.MAX.UNIT
OperatingtemperatureT
amb
-40100°C
SupplyvoltageV
CC
4.55.5V
InputcurrentlowlevelI
FL
0250μA
InputcurrenthighlevelI
FH
515mA
LogichighenablevoltageV
EH
2V
CC
V
LogiclowenablevoltageV
EL
00.8
OutputpullupresistorR
L
3304KΩ
FanoutR
L
=1kΩN-5-
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Note
?Minimumandmaximumvaluesaretestingrequirements.Typicalvaluesarecharacteristicsofthedeviceandaretheresultofengineering
evaluation.Typicalvaluesareforinformationonlyandarenotpartofthetestingrequirements.
Notes
?Overrecommendedtemperature(T
amb
=-40°Cto+100°C),V
CC
=5V,I
F
=7.5mAunlessotherwisespecified.AlltypicalsatT
amb
=25°C,
V
CC
=5V.
(1)
75nsappliestothe6N137only,aJEDEC
?
registeredspecification
ELECTRICALCHARACTERISTICS(T
amb
=25°C,unlessotherwisespecified)
PARAMETERTESTCONDITIONSYMBOLMIN.TYP.MAX.UNIT
INPUT
InputforwardvoltageI
F
=10mAV
F
1.11.41.7V
ReversecurrentV
R
=5VI
R
-0.010μA
Inputcapacitancef=1MHz,V
F
=0VC
I
-55-pF
OUTPUT
Highlevelsupplycurrent
(singlechannel)
V
E
=0.5V,I
F
=0mAI
CCH
-4.17mA
V
E
=V
CC
,I
F
=0mAI
CCH
-336
Highlevelsupplycurrent
(dualchannel)
I
F
=0mAI
CCH
-6.512mA
Lowlevelsupplycurrent
(singlechannel)
V
E
=0.5V,I
F
=10mAI
CCL
-47A
V
E
=V
CC
,I
F
=10mAI
CCL
-3.36m
Lowlevelsupplycurrent
(dualchannel)
I
F
=10mAI
CCL
-6.512mA
HighleveloutputcurrentV
E
=2V,V
CC
=5.5V,I
F
=250μAI
OH
-0.0021μA
Lowleveloutputvoltage
V
E
=2V,I
F
=5mA,
I
OL
(sinking)=13mA
V
OL
-0.20.6V
Inputthresholdcurrent
V
E
=2V,V
CC
=5.5V,
I
OL
(sinking)=13mA
I
TH
-2.45mA
HighlevelenablecurrentV
E
=2VI
EH
--0.6-1.6mA
LowlevelenablecurrentV
E
=0.5VI
EL
--0.8-1.6mA
HighlevelenablevoltageV
EH
2-V
LowlevelenablevoltageV
EL
--0.8
SWITCHINGCHARACTERISTICS
PARAMETERTESTCONDITIONSYMBOLMIN.TYP.MAX.UNIT
Propagationdelaytimetohigh
outputlevel
R
L
=350Ω,C
L
=15pF
t
PLH
204875
(1)
ns
t
PLH
--100ns
Propagationdelaytimetolow
outputlevel
R
L
=350Ω,C
L
=15pF
t
PHL
255075
(1)
ns
t
PHL
--100ns
PulsewidthdisortionR
L
=350Ω,C
L
=15pF|t
PHL
-t
PLH|
-2.935ns
PropagationdelayskewR
L
=350Ω,C
L
=15pFt
PSK
-840ns
Outputrisetime(10%to90%)R
L
=350Ω,C
L
=15pFt
r
-23-ns
Outputfalltime(90%to10%)R
L
=350Ω,C
L
=15pFt
f
-7
Propagationdelaytimeof
enablefromV
EH
toV
EL
R
L
=350Ω,C
L
=15pF,
V
EL
=0V,V
EH
=3V
t
ELH
-12-ns
Propagationdelaytimeof
enablefromV
EL
toV
EH
R
L
=350Ω,C
L
=15pF,
V
EL
=0V,V
EH
=3V
t
EHL
-11-ns
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Fig.5-SingleChannelTestCircuitfort
PLH
,t
PHL
,t
r
andt
f
Fig.6-DualChannelTestCircuitfort
PLH
,t
PHL
,t
r
andt
f
Fig.7-SingleChannelTestCircuitfort
EHL
,andt
ELH
1
2
3
4
8
7
6
5
18964-2
TheprobeandJigcapacitancesareincludedinC
InputI
F
OutputV
O
I
F
0mA
V
OL
1.5V
t
PHLt
PLH
V
OH
C=15pF
GND
0.1μF
bypass
V
CC
V
OUT
V
CC
I
F
R
R
L
InputI
F
monitoring
node
OutputV
O
monitoring
node
L
Singlechannel
Pulsegen.
Z=50Ω
t=t=5ns
o
fr
M
L
=7.5mA
I
F
=3.75mA
V
E
1
2
3
4
8
7
6
5
GND
V
CC
Pulsegen.
Z
0
=50Ω
t
f
=t
r
=5ns
Input
monitoring
node
Dualchannel
OutputV
monitoring
node
O
I
F
R
M
R
L
C
L
=15pF
0.1μF
bypass
18963-5
V
CC
1
2
3
4
8
7
6
5
18975-2
TheprobeandJigcapacitancesareincludedinC
InputV
E
OutputV
O
t
EHL
t
ELH
C=15pF
GND
0.1μF
bypass
V
CC
V
OUT
V
CC
I
F
R
L
OutputV
O
monitoring
node
L
Singlechannel
Pulsegen.
Z=50Ω
t=t=5ns
o
fr
L
7.5mA
InputV
monitoringnode
E
3V
1.5V
1.5V
V
E
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Notes
(1)
For6N137andVO2630
(2)
ForVO2601andVO2631
(3)
ForVO2611andVO4661
Fig.8-SingleChannelTestCircuitforCommonModeTransientImmunity
Fig.9-DualChannelTestCircuitforCommonModeTransientImmunity
COMMONMODETRANSIENTIMMUNITY(T
amb
=25°C,unlessotherwisespecified)
PARAMETERTESTCONDITIONSYMBOLMIN.TYP.MAX.UNIT
Commonmodetransientimmunity
|V
CM
|=10V,V
CC
=5V,I
F
=0mA,
V
O(min.)
=2V,R
L
=350Ω,T
amb
=25°C
(1)
|CM
H
|10V/μs
|V
CM
|=50V,V
CC
=5V,I
F
=0mA,
V
O(min.)
=2V,R
L
=350Ω,T
amb
=25°C
(2)
|CM
H
|500010000V/μs
|V
CM
|=1kV,V
CC
=5V,I
F
=0mA,
V
O(min.)
=2V,R
L
=350Ω,T
amb
=25°C
(3)
|CM
H
|1500025000V/μs
|V
CM
|=10V,V
CC
=5V,I
F
=7.5mA,
V
O(max.)
=0.8V,R
L
=350Ω,T
amb
=25°C
(1)
|CM
L
|10V/μs
|V
CM
|=50V,V
CC
=5V,I
F
=7.5mA,
V
O(max.)
=0.8V,R
L
=350Ω,T
amb
=25°C
(2)
|CM
L
|500010000V/μs
|V
CM
|=1kV,V
CC
=5V,I
F
=7.5mA,
V
O(max.)
=0.8V,R
L
=350Ω,T
amb
=25°C
(3)
|CM
L
|1500025000V/μs
V
CM
(peak)
SwitchATA:I
F
SwitchATA:
V
O
(min.
V
O
(max.)
0V
5V
V
CM
V
O
V
O
0.5V
CM
H
CM
L
1
2
3
4
8
7
6
5
18976-2
GND
0.1μF
bypass
V
CC
V
OUT
V
CC
R
L
OutputV
O
monitoring
node
+
-
V
CM
Singlechannel
B
A
V
FF
I
F
Pulsegenerator
Z=50Ω
O
V
E
)
=0mA
I
F
=7.5mA
1
2
3
4
8
7
6
5
18977-1
GND
0.1μF
bypass
V
CC
R
L
OutputV
O
monitoring
node
+
-
V
CM
B
A
V
FF
I
F
Pulsegenerator
Z=50Ω
O
Dualchannel
V
CC
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Note
?AsperIEC60747-5-5,§7.4.3.8.2,thisoptocouplerissuitablefor“safeelectricalinsulation”onlywithinthesafetyratings.Compliancewith
thesafetyratingsshallbeensuredbymeansofprotectivecircuits.
TYPICALCHARACTERISTICS(T
amb
=25°C,unlessotherwisespecified)
Fig.10-ForwardVoltagevs.AmbientTemperatureFig.11-ForwardVoltagevs.ForwardCurrent
SAFETYANDINSULATIONRATINGS
PARAMETERTESTCONDITIONSYMBOLVALUEUNIT
ClimaticclassificationAccordingtoIEC68part155/100/21
PollutiondegreeAccordingtoDINVDE01092
ComparativetrackingindexInsulationgroupIIIaCTI175
MaximumratedwithstandingisolationvoltageAccordingtoUL1577,t=1minV
ISO
5300V
RMS
MaximumtransientisolationvoltageAccordingtoDINEN60747-5-5V
IOTM
8000V
peak
MaximumrepetitivepeakisolationvoltageAccordingtoDINEN60747-5-5V
IORM
890V
peak
Isolationresistance
T
amb
=25°C,V
IO
=500VR
IO
≥10
12
Ω
T
amb
=100°C,V
IO
=500VR
IO
≥10
11
Ω
OutputsafetypowerP
SO
500mW
InputsafetycurrentI
SI
300mA
InputsafetytemperatureT
S
175°C
Creepagedistance
DIP-8
≥7mm
Clearancedistance≥7m
Creepagedistance
DIP-8,400mil(option6)
≥8mm
Clearancedistance≥8m
Creepagedistance
SMD-8(option7)
≥8mm
Clearancedistance≥8m
Creepagedistance
SMD-8(option9)
≥8mm
Clearancedistance≥8m
InsulationthicknessDTI≥0.4mm
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
T
amb
-AmbientTemperature(°C)
I
F
=10mA
I
F
=20mA
I
F
=1mA
V
F
-ForwardVoltage(V)
-40-20020406080100
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
0101520253035404550
I
F
-ForwardCurrent(mA)17611
V
F
-ForwardVoltage(V)
5
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Fig.12-ReverseCurrentvs.AmbientTemperature
Fig.13-LowLevelSupplyCurrentvs.AmbientTemperature
Fig.14-HighLevelSupplyCurrentvs.AmbientTemperature
Fig.15-InputThresholdOnCurrentvs.AmbientTemperature
Fig.16-InputThresholdOffCurrentvs.AmbientTemperature
Fig.17-LowLevelOutputVoltagevs.AmbientTemperature
0
1
2
3
4
5
6
7
I
R
-ReverseCurrent(nA)
T
amb
-AmbientTemperature(°C)17613-1
V
R
=5V
-40-2002040608010
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
CCI
-LowLevelSupplyCurrent(mA)
T
amb
-AmbientTemperature(°C)17614
V
CC
=5V
I
F
=10mA
I
F
=10mA
V
CC
=7V
-40-2002040608010
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
I
CCH
-HighLevelSupplyCurrent(mA)
T
amb
-AmbientTemperature(°C)17615
V
CC
=7V
I
F
=0.25mA
V
CC
=5V
I
F
=0.25mA
-40-2002040608010
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
I
TH
-InputThresholdOnCurrent(μA)
T
amb
-AmbientTemperature(°C)17616
R
L
=350Ω
R
L
=1kΩ
R
L
=4kΩ
-40-2002040608010
2.0
2.1
2.2
2.3
2.4
2.5
2.6
I
TH
-InputThresholdOffCurrent(μA)
T
amb
-AmbientTemperature(°C)17617
R
L
=350Ω
R
L
=1kΩ
R
L
=4kΩ
-40-2002040608010
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
OL
-LowLevelOutputVoltage(V)
T
amb
-AmbientTemperature(°C)
17618
I
L
=6mA
I
L
=10mA
I
L
=13mA
I
L
=16mA
V
CC
=5.5V
I
F
=5mA
-40-2002040608010
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Fig.18-LowLevelOutputCurrentvs.AmbientTemperature
Fig.19-HighLevelOutputCurrentvs.AmbientTemperature
Fig.20-OutputVoltagevs.ForwardInputCurrent
Fig.21-PropagationDelayvs.AmbientTemperature
Fig.22-PropagationDelayvs.ForwardCurrent
Fig.23-PulseWidthDistortionvs.AmbientTemperature
0
10
20
30
40
50
60
I
OL
-LowLevelOutputCurrent(mA)
T
amb
-AmbientTemperature(°C)17619
I
F
=5mA
I
F
=10mA
-40-2002040608010
0
5
10
15
20
25
30
35
40
45
50
I
OH
-HighLevelOutputCurrent(nA)
T
amb
-AmbientTemperature(°C)17620
-40-2002040608010
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
V
o
-OutputVoltage(V)
I
F
-ForwardInputCurrent(mA)17621
R
L
=350Ω
54321
R
L
=1kΩ
R
L
=4kΩ
0
20
40
60
80
100
120
T
amb
-AmbientTemperature(°C)17622
t
P
-PropagationDelayTime(ns)
t
PLH
,4kΩ
t
PLH
,1kΩ
t
PLH
,350Ω
t
PHL
,350Ω
t
PHL
,1kΩ
t
PHL
,4kΩ
-40-2002040608010
0
20
40
60
80
100
120
511315
I
F
-ForwardCurrent(mA)
17623
t
P
-PropagationDelayTime(ns)
t
PLH
,4kΩ
97
t
PLH
,1kΩ
t
PLH
,350Ω
t
PHL
,350Ω
t
PHL
,1kΩ
t
PHL
,4kΩ
0
10
20
30
40
50
T
amb
-AmbientTemperature(°C)17624
PWD-PulseWidthDistortion(ns)
R
L
=4kΩ
R
L
=1kΩ
R
L
=350Ω
-40-2002040608010
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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Fig.24-PulseWidthDistortionvs.ForwardCurrent
Fig.25-RiseandFallTimevs.AmbientTemperature
Fig.26-RiseandFallTimevs.ForwardCurrent
Fig.27-EnablePropagationDelayvs.AmbientTemperature
0
10
20
30
40
50
60
511315
I
F
-ForwardCurrent(mA)17625
PWD-PulseWidthDistortion(ns)
R
L
=4kΩ
97
R
L
=1kΩ
R
L
=350Ω
0
50
100
150
200
250
300
T
amb
-AmbientTemperature(°C)17626
t
r,f
-RiseandFallTime(ns)
t
r
,R
L
=4kΩ
t
f
,R
L
=350Ω
t
f
,R
L
=1kΩ
t
f
,R
L
=4kΩ
t
r
,R
L
=1kΩ
t
r
,R
L
=350Ω
-40-2002040608010
0
50
100
150
200
250
300
511315
I
F
-ForwardCurrent(mA)17627
t
r,f
-RiseandFallTime(ns)
t
r
,R
L
=4kΩ
97
t
r
,R
L
=1kΩ
t
r
,R
L
=350Ω
t
f
,R
L
=350Ω
t
f
,R
L
=1kΩ
t
f
,R
L
=4kΩ
0
10
20
30
40
50
60
T
amb
-AmbientTemperature(°C)17628
t
E
-EnablePropagationDelay(ns)
t
ELH
=4kΩ
t
ELH
=350Ω
t
EHL
=350Ω
t
EHL
=4kΩ
t
ELH
=1kΩ
t
EHL
=1kΩ
-40-2002040608010
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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PACKAGEDIMENSIONS(inmillimeters)
DIP-8
DIP-8,400mil(option6)
10.16max.
9.75±0.15
1.27±0.10
0.50±0.10
2.54nom.
3x2.54=7.62
3.55±0.20
0.70±0.20
0.95±0.20
7.62typ.
6.70±0.15
7°typ.
0.25±0.10
3.10±0.25
6.00±0.25
PINONEI.D.
8765
2143
PINONEI.D.
8765
2143
10.16max.
9.75±0.15
1.27±0.10
0.50±0.10
2.54nom.
3x2.54=7.62
3.55±0.20
0.1min.
0.95±0.20
10.16typ.
7.62typ.
6.70±0.15
10.55±0.40
0.25±0.10
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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SMD-8(option7)
SMD-8(option9)
PINONEI.D.
1234
7865
10.16max.
9.75±0.15
1.27±0.10
2.54nom.
3x2.54=7.62
3.55±0.20
0.95±0.20
Leads
coplanarity
0.10max.
0.25±0.10
10.05±0.25
7.62typ.
8.00min.
6.70±0.15
0.70±0.20
0.75±0.25
8.40min.
R0.250
2.54
0.76
1.78
1.52
11.05
8.00min.
RecommendedFootprint
PINONEI.D.
1234
7865
10.16max.
9.75±0.15
1.27±0.10
2.54nom.
3x2.54=7.62
3.55±0.20
0.95±0.20
Leadscoplanarity
0.10max.
7.62typ.
8.00min.
6.70±0.15
0.25±0.10
0.75±0.20
9.78±0.25
0.18±0.08
R0.250
2.54
0.76
1.78
1.52
11.05
8.00min.
RecommendedFootprint
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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PACKAGEMARKING
Fig.28-ExampleofVO2611-X017T
Notes
?VDElogoisonlymarkedonoption1parts.
?Tapeandreelsuffix(T)isnotpartofthepackagemarking.
PACKINGINFORMATION(inmillimeters)
Tube
Fig.29-ShippingTubeSpecificationsforDIP-8Packages
DIP-8
Fig.30-TubeShippingMedium
DEVICESPERTUBS
TYPEUNITS/TUBETUBES/BOXUNITS/BOX
DIP-850402000
VO2611
VYWW68
17996-3
MADEINMALAYSIA
ANTISTATIC
DetailA
200±0.5
125±0.5
150±0.5
DetailB
B
14x
13x10=130
–1.0
A
OPTOSEMICONDUCTORVISHAY
260±0.5
330±0.5
528±0.2
30±0.5
0.7±0.5
3±0.5
380±1
–1.0
1.0
–1.0
–1.0
DetailADetailB
10°
6°
SectionA-B
R0.1
R0.5
//0.2B
A
B
Nottoscale
TransparentrigidPVC
17996-4
12±0.3
6.6±0.3
4.4±0.3
5.7±0.15
11±0.3
0.6±0.1
2.7±0.2
6N137,VO2601,VO2611,VO2630,VO2631,VO4661
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DIP-8,400mil(option6)
Fig.31-TubeShippingMedium
TapeandReel
Fig.32-TapeandReelShippingMediumFig.33-TapeandReelShippingMedium
SMD-8(option7)
Fig.34-TapeandReelPacking(1000piecesonReel)
15912
Withstopperpins
tolerance:±0.5
length:575±5
9
4.3
15.3
5.7
13.6
0.5
Topcovertape
Embossment
Embossedcarrier
17998
ESDsticker
Tapeslot
incore
330
(13")
Regular,special
orbarcodelabel
17999
1.75±0.1
(0.069±0.004)
13.3(0.523)
4.7(0.185)
0.35(0.014)
16.0±0.3
(0.630±0.012)
18008
4±0.1
(1.57±0.004)
2±0.05(0.079±0.002)
10.41(0.410)
10.21
(0.402)
12.0(0.472)
7.5±0.05
(0.295±0.002)
Embossment
Directionoffeed
Centerlines
ofcavity
10pitchcumulative
toleranceontape
±0.2(0.008)
1.5(0.059)min.
1.5(0.059)
Pin1and
topofcomponent
Top
cover
tape
0.1(0.004)max.
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SMD-8(option9)
Fig.35-TapeandReelShippingMedium
SOLDERPROFILES
Fig.36-WaveSolderingDoubleWaveProfileAccordingto
J-STD-020forDIPDevices
Fig.37-Lead(Pb)-freeReflowSolderProfileAccordingto
J-STD-020forSMDDevices
HANDLINGANDSTORAGECONDITIONS
ESDlevel:HBMclass2
Floorlife:unlimited
Conditions:T
amb
<30°C,RH<85%
Moisturesensitivitylevel1,accordingtoJ-STD-020
4.17(0.164)
18009
10.2(0.402)
10.31
(0.406)
12.0(0.472)
1.75±0.1
(0.069±0.004)
13.3(0.523)
0.35(0.014)
16.0±0.3
(0.630±0.012)
4±0.1
(1.57±0.004)
2±0.05(0.079±0.002)
7.5±0.05
(0.295±0.002)
Embossment
Directionoffeed
Centerlines
ofcavity
10pitchcumulative
toleranceontape
±0.2(0.008)
1.5(0.059)min.
1.5(0.059)
Pin1and
topofcomponent
Top
cover
tape
0.1(0.004)max.
2K/s
second
wave
firstwave
wave
ca.5K/s
5s
fullline:typical
dottedline:
processlimits
Time(s)
Temperature(°C)
300
250
200
150
100
50
0
05010150200250
948626
Leadtemperature
235°Cto
260°C
100°Cto
130°C
ca.200K/s
forcedcooling
ca.2K/s
0
50
100
150
200
250
300
050100150200250300
Time(s)
Temperature(°C)
240°C
245°C
max.260°C
max.120smax.100s
217°C
max.30s
max.rampup3°C/s
max.rampdown6°C/s
19841
255°C
LegalDisclaimerNotice
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