ConfidentialProprietaryPowerDiscretesDivision/SPG
TransientIssuesforIHCookers
AlanBall–ApplicationsEngMgr.
ConfidentialProprietaryPowerDiscretesDivision/SPG
电磁炉应用中的瞬态现象
IGBT应用部门经理:AlanBall
PowerDiscretesDivision/SPG
ConfidentialProprietary
BreakdownVoltagevs.UISRatings
?ThebreakdownvoltageofanIGBTisnotameasureofthe
ruggednessofthedevicebutonlyindicatesatwhatvoltage
avalanchewillbegin.
?TheUnclampedInductiveSwitchingorUISratingisavalid
measureoftheruggednessofanIGBT.
PowerDiscretesDivision/SPG
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击穿电压与UIS等级
?IGBT的击穿电压不能衡量器件的耐久性能,它只是表明器件在什麽电压下
崩溃.
?UIS等级是一个有效的衡量器件耐久性能的参数.
击穿电压UIS
PowerDiscretesDivision/SPG
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WhyUISRatingsiscriticalinIH
cookers?
TheIGBTcollectorvoltageis
proportionaltothelinevoltage.
Whenatransientoccurs,itis
reflectedintheIGBTcollector-
emittervoltage.
1200V
ThiscausestheIGBTtoavalanche.
TheamountofenergythattheIGBT
canwithstandinanavalanche
conditionismeasuredbytheUIS
rating.
PowerDiscretesDivision/SPG
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为什么UIS等级在电磁炉中非常关键?
IGBT的漏极电压与电路电压成正比.当瞬态现象发生时,它反应在IGBT的
源漏电压上,造成IGBT崩溃.在崩溃状态下,IGBT可承受的能量由UIS来衡量.
1200V
PowerDiscretesDivision/SPG
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TransientsinEndApplications
?Transientsinresidentialbuildingwiringoccurduetoloaddumps,
suchasamotorturningoff.Energyisstoredintheinductanceofthe
buildingwiring.Thatenergywillfindadischargepathwhichinsome
casesisanIHcooker.
?JustasoccursintheUIStest,thevoltagewillspiketoahigh
enoughleveltocontinuetheflowofcurrentuntilitsenergyis
discharged.
?AhighervoltageIGBTwillcauseahighervoltagespikebutwill
stillavalanche.
TheUISratingisthe
criticalparameterthat
willdeterminethe
survivaloftheIGBT.
PowerDiscretesDivision/SPG
ConfidentialProprietary
末端应用中的瞬态现象
?在居住的建筑中,当负载甩离电网时,如电机关断,会发生瞬态现象.能量
存储在建筑中的电线网络的电感中.这些能量会通过某些途径释放,其中有
电磁炉.
?正像UIS测量时一样,这些能量会形成足够高的电压峰而产生电流直到能
量释放为止.
?高电压IGBT会形成高电压峰,但仍会被击穿而崩溃.
UIS等级是一个非常关键的
参数,它决定IGBT能否让能
量安全通过.
PowerDiscretesDivision/SPG
ConfidentialProprietary
StandardUISTestingMethod
Energyisstoredintheinductor
whiletheIGBTison.TheIGBT
isturnedoffandtheinductive
energycausesavoltagespike
onthecollectorthatavalanches
theIGBT.
IftheIGBTsurvivesthepulse,the
peakcurrentisincreasedandthe
testrepeateduntilfailureoccurs.
TheUISratingistheenergylevelat
thecurrentjustbeforethefailure
occurred.
PowerDiscretesDivision/SPG
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标准UIS测试方法
当IGBT开通时,能量存储在电感中.IGBT关断时,电感能形成的电压峰加在漏极
上而使IGBT崩溃.如果IGBT能通过脉冲,增加峰值电流而重复测量直到IGBT失
效为止.UIS等级是IGBT失效前的能量等级.
PowerDiscretesDivision/SPG
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StandardUISTestingMethod
UISTestSystem
IntegratedTechnologyCorporation
Tempe,AZ85281
http://www.inttechcorp.com/
PowerDiscretesDivision/SPG
ConfidentialProprietary
UIS测试系统
IntegratedTechnologyCorporation
Tempe,AZ85281
http://www.inttechcorp.com/
标准UIS测试方法
PowerDiscretesDivision/SPG
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StandardUISTestingMethod
PassingWaveformFailingWaveform
Theenergyofeachpulseiscalculatedbasedonthe
voltageandcurrentwaveformsfromtheoscilloscope.
PowerDiscretesDivision/SPG
ConfidentialProprietary
标准UIS测试方法
通过的波形未通过的波形
每个脉冲的能量是通过示波器上的电流电压波形计算而得.
PowerDiscretesDivision/SPG
ConfidentialProprietary
StandardUISTestingMethod
Screenshotforfailedwaveform
PowerDiscretesDivision/SPG
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标准UIS测试方法
失效IGBT的波形
PowerDiscretesDivision/SPG
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ResonantConverterBreakdown
VoltageTest/UIS
Theresonantpowercircuitcanbeusedtotestthepeakbreakdown
voltageandalsotogiveanindicationoftheUIScapabilityofapart.
PowerDiscretesDivision/SPG
ConfidentialProprietary
用谐振转换器测量击穿电压和UIS
谐振电路可以用来测量器件的击穿电压,也可以用来衡量器件的UIS能力.
PowerDiscretesDivision/SPG
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ResonantConverterBreakdownVoltageTest/UIS
L=108uH
C=0.27uF
PowerDiscretesDivision/SPG
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用谐振转换器测量击穿电压和UIS
L=108uH
C=0.27uF
PowerDiscretesDivision/SPG
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ResonantConverterBreakdownVoltageTest/UIS
WaveformofIGBTjustbefore
breakdownWaveformofIGBTafterfailure
VerylowUIS.Withaverysmallincreaseininductive
energy,avalancheoccursandfailureimmediatelyfollows
Competitor1200V
20A
Competitor1200V
20A
PowerDiscretesDivision/SPG
ConfidentialProprietary
用谐振转换器测量击穿电压和UIS
图中的IGBT的UIS能力非常低.电磁感应能微略增加,使IGBT崩溃,接着很快
失效.
竞争对手1200V20A竞争对手1200V20A
击穿前的IGBT波形失效后的IGBT波形
PowerDiscretesDivision/SPG
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TheONSemiIGBTcanexceedtheenergylevelrequired
foravalancheandsurvivethebreakdownevent.
NGTB20N135IHRWG
WaveformofIGBTjustbefore
breakdownWaveformofIGBTduringavalanche
NGTB20N135IHRWG
90,000watts
350mJ
Nofailureatthis
energylevel
ResonantConverterBreakdownVoltageTest/UIS
PowerDiscretesDivision/SPG
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用谐振腔的击穿电压测量UIS
安森美公司的IGBT能承受很高的器件崩溃时产生的能量,能通过击穿脉冲.
NGTB20N135IHRWG
击穿前的IGBT波形
击穿后崩溃时的IGBT波形
NGTB20N135IHRWG
90,000watts
350mJ
在这一能量级别
未失效
PowerDiscretesDivision/SPG
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UISRatings,monolithicIGBTs
1200V,monolithic-ONSemiconductorvs.acompetitivepart.
Inthistest,theONSemiconductorIGBThasaUIScapabilityof
100xthecompetition.
0
20
40
60
80
100
120
1
mJ
NGTB20N120IHRWG
ThesuperiorUISratingof
ONSemiconductorIGBTs
greatlyincreasestheir
reliabilitywhensystem
transientsoccur.
PowerDiscretesDivision/SPG
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单片IGBT的UIS等级
1200V单片IGBT:比较安森美公司的IGBT与另一公司的产品
在这一测试比较中,安森美公司IGBT的UIS能力是另一公司产品的一百倍.
0
20
40
60
80
100
120
1
mJ
NGTB20N120IHRWG
当瞬态现象发生时,安森美公司IGBT的
超级UIS能力极大地增强系统的可靠性.
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