8Asuperfastrecoverydiode
CURRENT8Ampere
STTH8R06FP
VOLTAGERANG600Volts
Fig.7:Softnessfactor(tb/ta)versusdI/dt
F
Fig.6:ReverserecoverychargesversusdI/dt
F
(typicalvalues).
(90%confidence).
Sfactor
Qrr(nC)
350
0.70
VR=400V
IF<2xIF(av)
Tj=125°C0.65
IF=2xIF(av)
VR=400V
300
Tj=125°C
0.60
0.55
IF=IF(av)
250
0.50
200IF=0.5xIF(av)0.45
0.40
150
0.35
0.30
100
0.25
0.20
50
dIF/dt(A/μs)
0.15
dIF/dt(A/μs)
0
0.10
02004006008001000
02004006008001000
Fig.9:Transientpeakforwardvoltageversus
Fig.8:Relativevariationofdynamic
parametersversusjunctiontemperaturedI/dt(90%confidence).
F
(Reference:Tj=125°C).
VFP(V)
2.5
12
IF=IF(av)
11
Tj=125°C
Sfactor
2.0
10
9
1.58
7
6
1.0
5
IRM
4
3
0.5
QRR
2
dIF/dt(A/μs)
Tj(°C)1
0.0
0
255075100125
050100150200250300350400450500
Fig.10:ForwardrecoverytimeversusdI/dtFig.11:Junctioncapacitanceversusreverse
F
(90%confidence).voltageapplied(typicalvalues).
tfr(ns)C(pF)
200100
VFR=1.1xVFmax.F=1MHz
180IF=IF(av)Vosc=30mV
Tj=125°CTj=25°C
160
14050
120
100
80
6020
40
20
dIF/dt(A/μs)VR(V)
010
050100150200250300350400450500110100200
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2018.11Rev.3.1 |
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