STEALTHC0116 Diode
30 A, 600 V
ISL9R3060G2, ISL9R3060P2
Description
The ISL9R3060G2, ISL9R3060P2 is a STEALTHC0116 diode
optimized for low loss performance in high frequency hard switched
applications. The STEALTH family exhibits low reverse recovery
current (I
rr
) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching applications.
The low I
rr
and short ta phase reduce loss in switching transistors.
The soft recovery minimizes ringing, expanding the range
of conditions under which the diode may be operated without the use
of additional snubber circuitry. Consider using the STEALTH diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
Features
? Stealth Recovery, t
rr
= 36 ns (@ I
F
= 30 A)
? Max Forward Voltage, V
F
= 2.4 V (@ T
C
= 25°C)
? 600 V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? This Device is Pb?Free and is RoHS Compliant
Applications
? SMPS
? Hard Switched PFC Boost Diode
? UPS Free Wheeling Diode
? Motor Drive FWD
? SMPS FWD
? Snubber Diode
www.onsemi.com
MARKING DIAGRAM
$Y&Z&3&K
R3060X2
K
A
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
ANODE
CATHODE
CATHODE
(BOTTOM
SIDE METAL)
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
R3060X2 = Specific Device Code
X =G/P
ANODE
CATHODE
CATHODE
(FLANGE)
JEDEC STYLE
2 LEAD TO?247?2L
JEDEC
TO?220AC?2L
9-12021.9 Rev.2.0 www.asemi99.com
ISL9R3060G2, ISL9R3060P2
DEVICE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
600 V
Working Peak Reverse Voltage V
RWM
600 V
DC Blocking Voltage V
R
600 V
Average Rectified Forward Current I
F(AV)
30 A
Repetitive Peak Surge Current (20 kHz Square Wave ) I
FRM
70 A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) I
FSM
325 A
Power Dissipation P
D
200 W
Avalanche Energy (1 A, 40 mH) E
AVL
20 mJ
Operating and Storage Temperature Range T
J,
T
STG
?55 to 175 °C
Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T
L
300 °C
Maximum Temperature for Soldering Package Body for 10 s T
PKG
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package
Packing
Methode Reel Size Tape Width Quantity
R3060G2 ISL9R3060G2 TO?247?2L Tube N/A N/A 30
R3060G2 ISL9R3060P2 TO?220AC?2L Tube N/A N/A 50
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF STATE CHARACTERISTICS
I
R
Instantaneous Reverse Current V
R
= 600 V T
C
= 25°C ? ? 100 C0109A
T
C
= 125°C ? ? 1 mA
ON CHARACTERISTICS
V
F
Instantaneous Forward Voltage I
F
= 30 A T
C
= 25°C ? 2.1 2.4 V
T
C
= 125°C
? 1.7 2.1 V
DYNAMIC CHARACTERISTICS
C
J
Junction Capacitance
V
R
= 10 V, I
F
= 0 A
? 120 ? pF
SWITCHING CHARACTERISTICS
T
rr
Reverse Recovery Time
I
F
= 1 A, di
F
/dt = 100 A/C0109s, V
R
= 30 V
? 27 35 ns
I
F
= 30 A, di
F
/dt = 100 A/C0109s, V
R
= 30V
? 36 45 ns
T
rr
Reverse Recovery Time I
F
= 30 A
di
F
/dt = 200 A/C0109s
V
R
= 390 V
T
C
= 25°C
? 36 ? ns
I
RR
Reverse Recovery Current ? 2.9 ? A
Q
RR
Reverse Recovery Charge ? 55 ? nC
T
rr
Reverse Recovery Time I
F
= 30 A
dIF/dt = 200 A/C0109s
V
R
= 390 V,
T
C
= 125°C
? 110 ? ns
S Softness Factor (t
b
/t
a
) ? 1.9 ? ?
I
RR
Reverse Recovery Current ? 6 ? A
Q
RR
Reverse Recovery Charge ? 450 ? nC
9-22021.9 Rev.2.0 www.asemi99.com
ISL9R3060G2, ISL9R3060P2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted) (continued)
Symbol UnitMax.Typ.Min.Test ConditionsParameter
SWITCHING CHARACTERISTICS
T
rr
Reverse Recovery Time I
F
= 30 A
dI
F
/dt = 1000 A/C0109s
V
R
= 390 V
T
C
= 125°C
? 60 ? ns
S Softness Factor (t
b
/t
a
) ? 1.25 ? ?
I
RR
Reverse Recovery Current ? 21 ? A
Q
RR
Reverse Recovery Charge ? 730 ? nC
dI
M
/dt Maximum di/dt during t
b
? 800 ? A/C0109s
THERMAL CHARACTERISTICS
R
C0113JC
Thermal Resistance Junction to Case ? ? 0.75 °C/W
R
C0113JA
Thermal Resistance Junction to Ambient
TO?247
? ? 30 °C/W
R
C0113JA
Thermal Resistance Junction to Ambient
TO?220
? ? 62 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9-32021.9 Rev.2.0 www.asemi99.com
ISL9R3060G2, ISL9R3060P2
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. t
a
and t
b
Curves vs. Forward Current Figure 4. t
a
and t
b
Curves vs. di
F
/dt
I
R
, Reverse Current (
C0109
A)
V
R
, Reverse Voltage (V)
I
F
, Forward Current (A)
V
F
, Forward Voltage (V)
t, Recovery T
imes (ns)
di
F
/dt, Current Rate of Change (A/C0109s)
t, Recovery T
imes (ns)
I
F
, Forward Current (A)
Figure 5. Maximum Reverse Recovery
Current vs. Forward Current
Figure 6. Maximum Reverse Recovery
Current vs. di
F
/dt
I
RR
, Max Reverse Recovery Current (A)
di
F
/dt, Current Rate of Change (A/C0109s)I
F
, Forward Current (A)
I
RR
, Max Reverse Recovery Current (A)
60
50
40
0
0 1.0 2.0 3.0
30
20
10
0.5 1.5 2.5
25
o
C
175
o
C
100
o
C
150
o
C
125
o
C
0
0
20
40
60
80
100
20 60
t
b
AT di
F
/dt = 200A/C0109s, 500A/C0109s, 800A/C0109s
V
R
= 390V, T
J
= 125C0053C
10 30 40 50
t
a
AT di
F
/dt = 200A/C0109s, 500A/C0109s, 800A/C0109s
90
70
50
30
10
4
8
10
12
14
18
20
di
F
/dt = 800A/C0109s
di
F
/dt = 500A/C0109s
di
F
/dt = 200A/C0109s
V
R
= 390V, T
J
= 125C0053C
020 6010 30 40 50
6
16
10
100
100 200 500 600400
1000
1
0.1
175
o
C
25
o
C
100
o
C
300
5000
75
o
C
150
o
C
125
o
C
0
20
40
60
80
120
V
R
= 390V, T
J
= 125C0053C
t
b
AT I
F
= 60A, 30A, 15A
1000 16001400400200 600 800 1200
t
a
AT I
F
= 60A, 30A, 15A
100
0
5
10
15
20
25
1000 1600
V
R
= 390V, T
J
= 125C0053C
I
F
= 60A
I
F
= 15A
1400400200 600 800 1200
30
I
F
= 30A
9-42021.9 Rev.2.0 www.asemi99.com
ISL9R3060G2, ISL9R3060P2
TYPICAL PERFORMANCE CURVES
Figure 7. Reverse Recovery Softness Factor vs. di
F
/dt Figure 8. Reverse Recovery Charge vs. di
F
/dt
Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. Forward Current Derating Curve
Q
RR
, Reverse Recovery Charge (nC)
di
F
/dt, Current Rate of Change (A/C0109s)
S, Reverse Recovery Softness Factor
di
F
/dt, Current Rate of Change (A/C0109s)
IF(A
V), A
verage Forward Current (A)
T
C
, Case Temperature (C0053C)
C
J
, Junction Capacitance (pF)
V
R
, Reverse Voltage (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
t, Rectangular Pulse Duration (s)
Z
C0113
JA
, Normalized Thermal Impedance
10?510?210?1
0.01
10?410?3
SINGLE PULSE
100
0.1
101
DUTY CYCLE ? DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
P
DM
t
1
t
2
1.0
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
C0113JA
x R
C0113JA
+ T
A
0.5
1.0
1.5
2.0
2.5
V
R
= 390V, T
J
= 125C0053C
I
F
= 60A
I
F
= 30A
I
F
= 15A
1000 16001400400200 600 800 1200
400
0
800
600
200
1000
0.1 1 10010
25 50 75 100 125 150 175
0
15
30
45
60
75
90
200
400
600
800
1000
1200
V
R
= 390V, T
J
= 125C0053C
I
F
= 60A
I
F
= 30A
I
F
= 15A
1000 16001400400200 600 800 1200
9-52021.9 Rev.2.0 www.asemi99.com
ISL9R3060G2, ISL9R3060P2
TEST CIRCUITS AND WAVEFORMS
Figure 12. T
rr
Test Circuit Figure 13. T
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms
I = 1 A
L = 40 mH
R < 0.1 C0087
V
DD
= 50 V
E
AVL
= 1/2LI2 [V
R(AVL)
/(V
R(AVL)
?V
DD
)]
Q1 = IGBT (BV
CES
> DUT V
R(AVL)
)
I
RM
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
GE
t
1
t
2
+
?
dt
dI
F
I
F
T
rr
t
a
t
b
0
0.25I
RM
DUT
CURRENT
SENSE
+
LR
V
DD
?
V
DD
Q
1
I
t
0
t
1
t
2
I
L
V
AVL
t
I
L
V
GE
AMPLITUDE AND
R
G
CONTROL dl
F
/dt
t
1
AND t
2
CONTROL I
F
V
V
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
9-62021.9 Rev.2.0 www.asemi99.com
TO?220?2LD
CASE 340BA
ISSUE O
DATE 31 AUG 2016
5°
3°
5°
3°
4.672
4.472
10.360
10.109
4.036
3.636
2.860
2.660
8.787
8.587
15.215
14.757
2.640
2.440
1.65
1.25
0.889
0.787
5.180
4.980
1.91
13.894
12.941
0.60 MAX
0.36M B A
0.36M CAB
A
B
1.400
1.146
7°
3°
6.477
6.121
2.755
2.555
0.457
0.357
5°
3°
5°
3°
C
8.89
6.86
3.962
3.720
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AC.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5?2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
12
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13831GDOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1TO?220?2LD
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XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
This information is generic. Please refer to
device data sheet for actual part marking.
Pb?Free indicator, “G” or microdot “C0071”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM
AYWWZZ
XXXXXXX
XXXXXXX
TO?247?2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON13850GDOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1TO?247?2LD
9-82021.9 Rev.2.0 www.asemi99.com
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