IGBT - Field Stop
600 V, 40 A
FGH40N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2
nd
generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
? Maximum Junction Temperature : T
J
= 175°C
? Positive Temperature Co?efficient for Easy Parallel Operating
? High Current Capability
? Low Saturation Voltage: V
CE(sat)
= 1.9 V (Typ) @ I
C
= 40 A
? High Input Impedance
? Fast Switching: E
OFF
= 6.5 C0109J/A
? Tighten Parameter Distribution
? This Device is Pb?Free, Halogen Free/BFR Free and is RoHS
Compliant
Applications
? Solar Inverter, Welder, UPS, PFC, Telecom, ESS
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40N60SMD = Specific Device Code
$Y&Z&3&K
FGH40N60
SMD
G
C
E
TO?247?3LD
CASE 340CK
C
G
E
COLLECTOR
(FLANGE)
9-12021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector to Emitter Voltage V
CES
600 V
Gate to Emitter Voltage V
GES
±20 V
Transient Gate to Emitter Voltage ±30 V
Collector Current T
C
= 25°C I
C
80 A
Collector Current T
C
= 100°C 40 A
Pulsed Collector Current (Note 1) T
C
= 25°C I
CM
120 A
Diode Forward Current T
C
= 25°C I
F
40 A
Diode Forward Current T
C
= 100°C 20 A
Pulsed Diode Maximum Forward Current (Note 1) I
FM
120 A
Maximum Power Dissipation T
C
= 25°C P
D
349 W
Maximum Power Dissipation T
C
= 100°C 174 W
Operating Junction Temperature T
J
?55 to +175 °C
Storage Temperature Range T
stg
?55 to +175 °C
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds T
L
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case (IGBT) R
C0113JC
0.43 °C/W
Thermal Resistance, Junction to Case (Diode) R
C0113JC
1.5 °C/W
Thermal Resistance, Junction to Ambient R
C0113JA
40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH40N60SMD FGH40N60SMD TO?247?3LD Tube N/A N/A 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
C
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BV
CES
V
GE
= 0 V, I
C
= 250 C0109A 600 ? ? V
Temperature Coefficient of Breakdown
Voltage
C0068BV
CES
/
C0068T
J
V
GE
= 0 V, I
C
= 250 C0109A ? 0.6 ? V/°C
Collector Cut?Off Current I
CES
V
CE
= V
CES
, V
GE
= 0 V ? ? 250 C0109A
G?E Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0 V ? ? ±400 nA
ON CHARACTERISTICS
G?E Threshold Voltage V
GE(th)
I
C
= 250 C0109A, V
CE
= V
GE
3.5 4.5 6.0 V
Collector to Emitter Saturation Voltage V
CE(sat)
I
C
= 40 A, V
GE
= 15 V ? 1.9 2.5 V
I
C
= 40 A, V
GE
= 15 V, T
C
= 175°C ? 2.1 ? V
9-22021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
C
= 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionsSymbol
DYNAMIC CHARACTERISTICS
Input Capacitance C
ies
V
CE
= 30 V, V
GE
= 0 V,
f = 1 MHz
? 1880 ? pF
Output Capacitance C
oes
? 180 ? pF
Reverse Transfer Capacitance C
res
? 50 ? pF
SWITCHING CHARACTERISTICS
Turn?On Delay Time t
d(on)
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6 C0087C0044 V
GE
= 15 V,
Inductive Load, T
C
= 25°C
? 12 16 ns
Rise Time t
r
? 20 28 ns
Turn?Off Delay Time t
d(off)
? 92 120 ns
Fall Time t
f
? 13 17 ns
Turn?On Switching Loss E
on
? 0.87 1.30 mJ
Turn?Off Switching Loss E
off
? 0.26 0.34 mJ
Total Switching Loss E
ts
? 1.13 1.64 mJ
Turn?On Delay Time t
d(on)
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6 C0087C0044 V
GE
= 15 V,
Inductive Load, T
C
= 175°C
? 15 ? ns
Rise Time t
r
? 22 ? ns
Turn?Off Delay Time t
d(off)
? 116 ? ns
Fall Time t
f
? 16 ? ns
Turn?On Switching Loss E
on
? 0.97 ? mJ
Turn?Off Switching Loss E
off
? 0.60 ? mJ
Total Switching Loss E
ts
? 1.57 ? mJ
Total Gate Charge Q
g
V
CE
= 400 V, I
C
= 40 A,
V
GE
= 15 V
? 119 180 nC
Gate to Emitter Charge Q
ge
? 13 20 nC
Gate to Collector Charge Q
gc
? 58 90 nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (T
C
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage V
FM
I
F
= 20 A T
C
= 25°C ? 2.3 2.8 V
T
C
= 175°C ? 1.67 ? V
Reverse Recovery Energy E
rec
I
F
= 20 A,
dI
F
/dt = 200 A/C0109s,
T
C
= 175°C ? 48.9 ? C0109J
Diode Reverse Recovery Time t
rr
T
C
= 25°C ? 36 ? ns
T
C
= 175°C ? 110 ns
Diode Reverse Recovery Charge Q
rr
T
C
= 25°C ? 46.8 ? nC
T
C
= 175°C ? 445 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
9-32021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs V
GE
0
40
60
80
100
120
024 6
V
CE
, Collector?Emitter Voltage (V)
I
C
, Collector Current (A)
V
CE
, Collector?Emitter Voltage (V)
I
C
, Collector Current (A)
0
40
60
80
100
120
01 234
V
CE
, Collector?Emitter Voltage (V)
I
C
, Collector Current (A)
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150 175
T
C,
Case Temperature (°C)
V
CE
, Collector
?
Emitter V
oltage (V)
0
4
12
16
20
481216 20
V
GE
, Gate?Emitter Voltage (V)
V
CE
, Collector
?
Emitter V
oltage (V)
0
4
8
12
16
20
481216 20
V
GE
, Gate?Emitter Voltage (V)
V
CE
, Collector
?
Emitter V
oltage (V)
20 V
15 V
12 V
10 V
V
GE
= 8 V
T
C
= 25°C
20
20 V
15 V
12V
10 V
V
GE
= 8 V
T
C
= 175°C
024 6
0
40
60
80
100
120
20
Common Emitter
V
GE
= 15 V
T
C
= 25°C
T
C
= 175°C
20
80 A
40 A
Common Emitter
V
GE
= 15 V
I
C
= 20 A
40 A
80 A
I
C
= 20 A
Common Emitter
T
C
= ?40°C
8
80 A
40 A
I
C
= 20 A
Common Emitter
T
C
= 175°C
9-42021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics
Figure 9. Turn?On Characteristics
vs. Gate Resistance
Figure 10. Turn?Off Characteristics
vs. Gate Resistance
Figure 11. Switching Loss vs. Gate
Resistance
Figure 12. Turn?On Characteristics
vs. Collector Current
0
1000
2000
4000
0.1 10
30
V
CE
, Collector?Emitter Voltage (V)
Capacitance (pF)
0
3
6
9
12
15
04080120
Q
g
, Gate Charge (nC)
V
GE
, Gate
?
Emitter V
oltage (V)
1
10
100
01020304050
R
G
, Gate Resistance (C0087)
Switching T
ime (ns)
1000
100
10
1
0102030 4050
R
G
, Gate Resistance (C0087)
Switching T
ime (ns)
0.1
1
5
0 102030 4050
R
G
, Gate Resistance (C0087)
Switching Loss (mJ)
1000
100
10
20 30 40 50 60 80
I
C
, Collector Current (A)
Switching T
ime (ns)
Common Emitter
V
GE
= 0 V, f = 1 MHz
T
C
= 25°C
C
ies
C
oes
C
res
1
3000
400 V
300 V
Common Emitter
T
C
= 25°C
V
CC
= 200 V
t
d(on)
t
r
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A
T
C
= 25°C
T
C
= 175°C
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A
T
C
= 25°C
T
C
= 175°C
t
d(off)
t
f
E
off
E
on
Common Emitter
V
CC
= 400 V, V
GE
= 15 V
I
C
= 40 A
T
C
= 25°C
T
C
= 175°C
t
d(on)
t
r
Common Emitter
V
GE
= 15 V, R
G
= 6 C0087
T
C
= 25°C
T
C
= 175°C
1
70
9-52021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn?Off Characteristics
vs. Collector Current
Figure 14. Switching Loss vs. Collector
Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
1000
100
10
1
20 30 40 50 60 70
I
C
, Collector Current (A)
Switching T
ime (ns)
0.1
1
6
20 30 40 50 60 70
I
C,
Collector Current (A)
Switching Loss (mJ)
0
50
100
150
200
1k 10k 100k 1M
f, Switching Frequency (Hz)
I
C
, Collector Current (A)
0.01
0.1
1
10
100
300
1 10 100 1000
V
CE
, Collector?Emitter Voltage (V)
I
C
, Collector Current (A)
1
10
100
0 0.5 1.0 1.5 2.0 3.0
V
F
, Forward Voltage (V)
I
F
, Forward Current (A)
0
2
4
6
8
10
12
010203040
I
F
, Forward Current (A)
I
rr
, Reverse Recovery Current (A)
t
d(off)
t
f
Common Emitter
V
GE
= 15 V, R
G
= 6 C0087
T
C
= 25°C
T
C
= 175°C
80
E
on
E
off
Common Emitter
V
GE
= 15 V, R
G
= 6 C0087
T
C
= 25°C
T
C
= 175°C
80
250
Square Wave
T
J
≤ 175°C, D = 0.5, V
CE
= 400 V
V
GE
= 12/0 V, R
G
= 6 C0087
T
C
= 100°C
T
C
= 75°C
1ms
10 ms
DC
100 C0109s
10 C0109s
Notes:
1. T
C
= 25°C
2. T
J
= 175°C
3. Single Pulse
T
C
= 175°C
T
C
= 25°C
T
C
= 175°C
T
C
= 25°C
T
C
= 175°C
di
F
/dt = 200 A/C0109s
di
F
/dt = 100 A/C0109s
di
F
/dt = 200 A/C0109s
di
F
/dt = 100 A/C0109s
T
C
= 25°C
2.5
9-62021.9 Rev.2.0 www.asemi99.com
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Time Transient Thermal Impedance of Diode
0
100
200
300
400
500
600
01020304045
I
F
, Forward Current (A)
t
rr
, Reverse Recovery T
ime (ns)
700
500
400
300
200
100
0
I
F
, Forward Current (A)
Q
rr
, Stored Recovery Charge (nC)
0.01
0.1
1
Rectangular Pulse Duration (sec)
Thermal Response (Z
C0113
jc)
0.01
0.1
1
3
10
?5
10
?4
10
?3
10
?2
10
?1
10
0
Rectangular Pulse Duration (sec)
Thermal Response (Z
C0113
jc)
5152535 010203040455152535
600
10
?5
10
?4
10
?3
10
?2
10
?1
10
0
0.001
9-72021.9 Rev.2.0 www.asemi99.com
TO?247?3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
This information is generic. Please refer to
device data sheet for actual part marking.
Pb?Free indicator, “G” or microdot “C0071”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25
M
BA
M
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM
MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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?
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