High Voltage V = 500V
IXTY02N50D
DSX
Power MOSFET I = 200mA
IXTU02N50D
D25
R ? ? ? ? ? 30 ? ? ? ? ?
IXTP02N50D
DS(on)
D
N-Channel
TO-252 (IXTY)
G
G
S
S
D (Tab)
TO-251 (IXTU)
Symbol Test Conditions Maximum Ratings
V T = 25 ?C to 150 ?C 500 V
DSX J
V T = 25 ?C to 150 ?C 500 V
DGX J
G
V Continuous ?20 V
GSX
D
S
V Transient ?30 V
D (Tab)
GSM
I T = 25 ?C 200 mA
D25 C
I T = 25 ?C, Pulse Width Limited by T 800 mA TO-220AB (IXTP)
DM C J
P T = 25 ?C 25 W
D C
T = 25 ?C 1.1 W
A
T - 55 ... +150 ?C
J
T 150 ?C
JM G
D
D (Tab)
T - 55 ... +150 ?C S
stg
T Maximum Lead Temperature for Soldering 300 °C
L
G = Gate D = Drain
T 1.6 mm (0.062in.) from Case for 10s 260 °C
SOLD
S = Source Tab = Drain
M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
d
Weight TO-252 0.35 g
TO-251 0.40 g
Features
TO-220 3.00 g
? Normally ON Mode
? ? International Standard Packages
TM
? ? Low R HDMOS Process
Symbol Test Conditions Characteristic Values
DS(on)
? Rugged Polysilicon Gate Cell Structure
(T = 25 ?C, Unless Otherwise Specified) Min. Typ. Max.
J
? Fast Switching Speed
BV V = -10V, I = 25 ?A 500 V
DSX GS D
Advantages
V V = 25V, I = 25 ?A - 2.5 - 5.0 V
GS(off) DS D
? Easy to Mount
I V = ?20V, V = 0V ?????????????????????100 nA
GSX GS DS
? Space Savings
I V = V , V = -10V 10 ?A
? High Power Density
DSX(off) DS DSX GS
T = 125 ?C 250?? A
J
Applications
R V = 0V, I = 50mA, Note 1 20 30 ??
DS(on) GS D
? Level Shifting
I V = 0V, V = 25V, Note 1 250 mA
D(on) GS DS
? Triggers
? Solid State Relays
? Current Regulators
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3-1
2021.9 Rev.2.0 IXTY02N50D IXTU02N50D
IXTP02N50D
Symbol Test Conditions Characteristic Values
(T = 25 ?C, Unless Otherwise Specified) Min. Typ. Max.
J
g V = 50V, I = 200mA, Note 1 100 150 mS
fs DS D
C 120 pF
iss
C V = -10V, V = 25V, f = 1MHz 25 pF
oss GS DS
C 5 pF
rss
t 9 ns
d(on)
Resistive Switching Times
t 4 ns
r
V = ?5V, V = 100V, I = 50mA
GS DS D
t 28 ns
d(off)
R = 30 ? (External)
G
t 45 ns
f
R 5.0 ??C/W
thJC
R TO-220 0.50 ?C/W
thCS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T = 25 ?C, Unless Otherwise Specified) Min. Typ. Max.
J
V I = 200mA, V = -10V, Note 1 0.7 1.5 V
SD F GS
I = 750mA, -di/dt = 100A/ ?s
t F 1.0 μs
rr
V = 25V, V = -10V
R GS
Note 1. Pulse test, t ? 300 ?s, duty cycle, d ? 2%.
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3-2
2021.9 Rev.2.0 IXTY02N50D IXTU02N50D
IXTP02N50D
TO-252 AA (IXTY) Outline TO-251 AA (IXTU) Outline TO-220 (IXTP) Outline
1. Gate; 2,4. Drain; 3. Source
1. Gate; 2,4. Drain; 3. Source
1. Gate; 2,4. Drain; 3. Source
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3-3
2021.9 Rev.2.0 |
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