ASE 60N10
100V N-Channel MOSFET
TO-263
ASE60N10
100V N-Channel MOSFET
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
1.Gate (G)
□ Unrivalled Gate Charge :Qg= 146.1nC (Typ.).
2.Drain (D)
□ BVDSS=100V,I =60A
D
3.Sourse (S)
□ R (on) : 17m? (Max) @V =10V
DS G
□ 100% Avalanche Tested
Absolute Maximum Ratings (Tc=25 ℃ Unless otherwise noted )
Symbol PARAMETER Value Unit
V Drain-SourceVoltage 100 V
DSS
T =25℃ 60
C
I DrainCurrent
D
A
T =100℃ 40
C
V Gate ThresholdVoltage ±20 V
GS(TH)
E Single Pulse Avalanche Energy (note1) 580 mJ
AS
I Avalanche Current (note2) 57 A
AR
160
P Power Dissipation (Tc=25 ℃) W
D
T Junction Temperature(MAX) 175 ℃
j
T Storage Temperature -55~+175 ℃
stg
Maximum lead temperature for soldering purpose,1/8” from
TL 300 ℃
case for 5 seconds
Thermal Characteristics
Symbol PARAMETER Typ. MAX. Unit
0.94
R Thermal Resistance,Junction to Case - ℃/W
θJC
60
R Thermal Resistance,Junction to Ambient - ℃/W
θJA
80
R Thermal Resistance,Case to Sink -
℃/W
θCS
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2022.3 Rev.2.0ASE 60N10
100V N-Channel MOSFET
Electrical Characteristics (T =25℃unless otherwise noted)
C
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV V =0V I =250 μA 100 - - V
DSS GS D
Zero Gate Voltage Drain Current I V =100V,V=0V - - 1 μA
DSS DS GS
Gate-Body Leakage Current I V =±20V,V=0V - - ±100 nA
GSS GS DS
(Note 3)
On Characteristics
Gate Threshold Voltage V V =V ,I =250 μA 2 - 4 V
GS(th) DS GS D
-
Drain-Source On-State Resistance R V =10V, I=28A - 17 m ?
DS(ON) GS D
Forward Transconductance g V =25V,I=28A 32 - - S
FS DS D
(Note4)
Dynamic Characteristics
Input Capacitance C - 3969 -PF
lss
V =25V,V =0V,
DS GS
Output Capacitance C - 182.5 -PF
oss
F=1.0MHz
Reverse Transfer Capacitance C - 160.2 - PF
rss
(Note 4)
Switching Characteristics
Turn-on Delay Time t - 17 -nS
d(on)
Turn-on Rise Time t V =30V,I =2A,R =15 ? - 13 -nS
r DD D L
Turn-Off Delay Time t V =10V,R =2.5 ? - 55 -nS
d(off) GS G
Turn-Off Fall Time t - 16 nS
-
f
Total Gate Charge Q - 146.1 -nC
g
V =30V,I =30A,
DS D
Gate-Source Charge Q - 29.3 -nC
gs
V =10V
GS
Gate-Drain Charge Q - 57.1 - nC
gd
Drain-Source Diode Characteristics
(Note 3)
Diode Forward Voltage VV =0V,I=28A - 0.85 1.2 V
SD GS S
(Note 2)
Diode Forward Current I -- 60 A
S
Reverse Recovery Time t TJ = 25°C, IF = 28A - 35 -nS
rr
(Note3)
Reverse Recovery Charge di/dt = 100A/μs - 58 - nC
Qrr
Forward Turn-On Time
t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25 ℃,V =50V,V =10V,Rg=25 ? ，L=1mH, I =35A
DD G AS
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2-6
2022.3 Rev.2.0ASE 60N10
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics (Curves)
T -Junction Temperatu
Vds Drain-Source Voltage (V) re( ℃)
J
Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)
Figure 2 Transfer Characteristics Figure 5 Gate Charge
I - Drain Current (A) Vsd Source-Drain Voltage (V)
D
Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward
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2022.3 Rev.2.0
Rdson On-Resistance(m Ω) I - Drain Current (A) I - Drain Current (A)
D D
I - Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Normalized On-Resistance
sASE60N10
100V N-Channel MOSFET
Vds Drain-Source Voltage (V) T -Junction Temperature( ℃)
J
Figure 7 Capacitance vs Vds Figure 9 BV vs Junction Temperature
DSS
Vds Drain-Source Voltage (V) T -Junction Temperature( ℃)
J
Figure 8 Safe Operation Area Figure 10 V vs Junction Temperature
GS(th)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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2022.3 Rev.2.0
C Capacitance (pF)
I - Drain Current (A)
D
r(t),Normalized Effective
Transient Thermal Impedance ASE 60N10
100V N-Channel MOSFET
Test Circuit
1 ）E test Circuit
AS
2 ）Gate charge test Circuit
3 ）Switch Time Test Circuit
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5-6
2022.3 Rev.2.0ASE60N10
100V N-Channel MOSFET
Package Dimension
TO-263
Unit: mm
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6-6
2022.3 Rev.2.0 |
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