ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
TO-247
500V N-Channel MOSFET
Features:
1 2 3
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
1.Gate (G)
□ Unrivalled Gate Charge :Qg=130 nC (Typ.).
2.Drain (D)
□ VDSS=500V,I =40A
D
3.Sourse (S)
□ R (on) : 85m ? (Tye ) @V =10V
DS G
□ 100% Avalanche Tested
Absolute Maximum Ratings ( Drain current limited by junction temperature)
Symbol Parameter WGA40N50 Unit
V Drain-to-Source Voltage 500
DSS
V
V Gate-to-Source Voltage ±30
GSS
Continuous Drain Current 40
I
D
Continuous Drain Current @ Tc=100 ℃ 30 A
[2,4]
I Pulsed Drain Current at V =10V 180
DM GS
E Single Pulse Avalanche Energy 5000 mJ
AS
[3]
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 540 W
P
D
Derating Factor above 25 ℃ 4.32 W/ ℃
Maximum Temperature for Soldering
T 300
L
Leads at 0.063in (1.6mm) from Case for 10
T 260
PAK
seconds, Package Body for 10 seconds
℃
T & T Operating and Storage Temperature Range -55 to 150
J STG
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol Parameter WGA40N50 Unit
R Thermal Resistance, Junction-to-Case 0.23
θJC
℃/W
R Thermal Resistance, Junction-to-Ambient 50
θJA
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8-1
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Electrical Characteristics ( T = 25 °C unless otherwise noted )
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV Drain-Source Breakdown Voltage V = 0V, I = 250uA 500 - - V
DSS GS D
Δ BV /
DSS Breakdown Voltage Temperature
I = 250uA, referenced to 25 °C
- - 0 0.3 .3 - - V V/° /°C C
D
coefficient
Δ T
J
V = 500V, V = 0V
--1uA
DS GS
I
Drain-Source Leakage Current
DSS
V = 400V, T = 125 °C --10uA
DS C
V = 30V, V = 0V
Gate-Source Leakage, Forward --100nA
GS DS
I
GSS
V = -30V, V = 0V
Gate-source Leakage, Reverse - - -100 nA
GS DS
On Characteristics
V V = V , I = 250uA
Gate Threshold Voltage 2.0 - 4.0 V
GS(th) DS GS D
Static Drain-Source On-state Resis-
R V =10 V, I = 20 A
- m
DS(ON) GS D ?
85 100
tance
Dynamic Characteristics
C
Input Capacitance - 8700 -
iss
pF
C Output Capacitance - 6090 -
oss
V =0 V, V =25V, f = 1MHz
GS DS
C Reverse Transfer Capacitance - 870 -
rss
Dynamic Characteristics
t Turn-on Delay Time - 25 -
d(on)
V =250V, I =20.0A, R =25 ?
DD D G
t Rise Time -
r 39 -
ns
t Turn-off Delay Time -
100 -
d(off)
(Note 4, 5)
t Fall Time - -
f 36
Q Total Gate Charge -
138 -
g
V =250V, V =10V, I =40.0A
DS GS D
Q Gate-Source Charge - 38 -
nC
gs
Q Gate-Drain Charge(Miller Charge) - 27 -
gd (Note 4, 5)
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit.
I Continuous Source Current Integral Reverse p-n Junction --
S 40
Diode in the MOSFET A
I Pulsed Source Current - - 160
SM
V Diode Forward Voltage I =40.0A, V =0V - - 1.4 V
SD S GS
t Reverse Recovery Time -730-ns
rr
I =40A, V =0V, dI /dt=100A/us
S GS F
Q Reverse Recovery Charge
rr - 3.0 - uC
※ NOTES
[1] T =+25 ℃ to +150 ℃ .
J
[2] Silicon limited current only.
[3] Package limited current.
[4] Repetitive rating; pulse width limited by maximum junction temperature.
[5] Pulse width≤380μs; duty cycle≤2%.
www.asemi99.com
8-2
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Typical Characteristics ( T = 25 °C unless otherwise noted )
C
www.asemi99.com
8-3
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Typical Characteristics ( T = 25 °C unless otherwise noted )
C
www.asemi99.com
8-4
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Typical Characteristics ( T = 25 °C unless otherwise noted )
C
www.asemi99.com
8-5
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Test circuit
Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit
Fig. 1.2 Peak Diode Recovery dv/dt Waveforms
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8-6
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Test circuit
www.asemi99.com
8-7
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 40 Ampere
ASE40N50SH
VOLTAGE RANG 500 Volts
Package Dimension
TO-247
TO-3P
Unit: mm
www.asemi99.com
8-8
2018.11 Rev.3.1
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