600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
TO-252
20N06
60V N-Channel MOSFET
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
1.Gate (G)
□ Unrivalled Gate Charge :Qg= 50nC (Typ.).
2.Drain (D)
□ BVDSS=60V,I =20A
D
3.Sourse (S)
□ R (on) : 0.024 ? (Max) @V =10V
DS G
□ 100% Avalanche Tested
Absolute Maximum Ratings (Tc=25 ℃ Unless otherwise noted)
Symbol PARAMETER Value Unit
V Drain-SourceVoltage 60 V
DSS
T =25℃ 20
C
I DrainCurrent
D
A
T =100℃
C 17
V Gate ThresholdVoltage ±20 V
GS(TH)
E Single Pulse Avalanche Energy (note1) mJ
AS 72
I Avalanche Current (note2) A
60
AR
P Power Dissipation (Tc=25 ℃) W
D 45
T Junction Temperature(MAX) 175 ℃
j
T Storage Temperature -55~+175 ℃
stg
Maximum lead temperature for soldering purpose,1/8” from
TL 300 ℃
case for 5 seconds
Thermal Characteristics
Symbol PARAMETER Typ. MAX. Unit
R Thermal Resistance,Junction to Case - 3.3 ℃/W
θJC
R Thermal Resistance,Junction to Ambient - - ℃/W
θJA
R Thermal Resistance,Case to Sink - 110
℃/W
θCS
www.asemi99.com
1-6
2022.3 Rev.2.0600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
Electrical Characteristics (T =25℃unless otherwise noted)
C
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV V =0V I =250 μA 60 - - V
DSS GS D
Zero Gate Voltage Drain Current I V =60V,V=0V - - 1 μA
DSS DS GS
Gate-Body Leakage Current I V =±20V,V=0V - - ±100 nA
GSS GS DS
(Note 3)
On Characteristics
Gate Threshold Voltage V V =V ,I =250μA 1.2 1.6 2.5 V
GS(th) DS GS D
Drain-Source On-State Resistance R V =10V, I=10A - 24 35 m ?
DS(ON) GS D
Forward Transconductance g V =5V,I=5A 11 - - S
FS DS D
(Note4)
Dynamic Characteristics
Input Capacitance C - -PF
lss 590
V =15V,V =0V,
DS GS
Output Capacitance C - 70 -PF
oss
F=1.0MHz
Reverse Transfer Capacitance C - - PF
rss 64
(Note 4)
Switching Characteristics
Turn-on Delay Time t - 6.0 -nS
d(on)
=2A,
Turn-on Rise Time t V =30V, ID - 6.1 --nS
r DD
V =10V,R =3 ?
Turn-Off Delay Time t GS G- 17 --nS
d(off)
Turn-Off Fall Time t - 3.0 - - nS
f
Total Gate Charge Q -25.3 --nC
g
V =30V,I =10A,
DS D
Gate-Source Charge Q -4.7 --nC
gs
V =10V
GS
Gate-Drain Charge Q - 6.1 - - nC
gd
Drain-Source Diode Characteristics
(Note 3)
Diode Forward Voltage VV =0V,I=20A - 1.2 V
SD GS S
(Note 2)
Diode Forward Current I -- 20 A
S
Reverse Recovery Time
t TJ = 25°C, IF =20A - 29.5 -nS
rr
(Note3)
Reverse Recovery Charge di/dt = 100A/μs
Qrr - 50 - nC
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 ?
www.asemi99.com
2-6
2022.3 Rev.2.0600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
Typical Characteristics
T -Junction Temperature( ℃)
Vds Drain-Source Voltage (V) J
Figure 4 Rdson-Junction Temperature
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I - Drain Current (A)
D
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Figure 6 Source- Drain Diode Forward
www.asemi99.com
3-6
2022.3 Rev.2.0
- Drain Current (A)
ID- Drain Current (A) I
Rdson On-Resistance(m Ω) D
Normalized On-Resistance
Vgs Gate-Source Voltage (V)
I - Reverse Drain Current (A)
s600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
Typical Characteristics (Continued)
Vds Drain-Source Voltage (V) T -Junction Temperature( ℃)
J
Figure 7 Capacitance vs Vds Figure 9 BV vs Junction Temperature
DSS
Vds Drain-Source Voltage (V)
T -Junction Temperature( ℃)
J
Figure 8 Safe Operation Area
Figure 10 V vs Junction Temperature
Square Wave Pluse Duration (sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
www.asemi99.com
4-6
2022.3 Rev.2.0
C Capacitance (pF)
I - Drain Current (A)
D
r(t),Normalized Effective
Transient Thermal Impedance
600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
Test Circuit
1) E test Circuit
AS
2) Gate charge test Circuit
3) Switch Time Test Circuit
www.asemi99.com
5-6
2022.3 Rev.2.0600V N-Channel MOSFET
CURRENT 28 Ampere
20N06
VOLTAGE RANG 600 Volts
Package Dimension
TO-252
Unit:mm
www.asemi99.com
6-6
2022.3 Rev.2.0 |
|
