SI2301
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.3A ?
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
130m
? 190m
Parameter Symbol Limit
Unit
Drain-Source Voltage
V
DS
-20
Gate-Source Voltage
V
GS
±8
V
Continuous Drain Current
I
D -2.2
Pulsed Drain Current
1)
I
DM -8
A
TA = 25
o
Maximum Power Dissipation
TA = 75
o
C
P
D
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
o
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
3)
166
o
C/W
1.25
2)
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
100
R
thJA
RDS(ON), Vgs@-2.5V, Ids@-2.0A
VOLTAGE RANG -20 Volts
-20V P-CHANNEL MOSFET
CURRENT -2.2 Ampere
4-12022.11 Rev.3.1 www.asemi99.com
SOT-23
1.Gate
2.Source
3.DrainG
D
S
ELECTRICAL CHARACTERISTICS
Parameter
Test Condition
Static
Drain-Source Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= -250uA -20
V
Drain-Source On-State Resistance RDS(on)
V
GS
= -4.5V, I
D
= -2.3A 105 130
V
GS
= -2.5V, I
D
= -2.0A 145 190
m?
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
, I
D
= -250uA -0.45 V
Zero Gate Voltage Drain Current 0
V
DS
= -16V, V
GS
= 0V
-1
Gate Body Leakage I
GSS
V
GS
= ± 8V, V
DS
= 0V
±100 nA
Forward Transconductance g
fs
V
DS
= -5V, I
D
= -2.3A 6.5 S
Dynamic
Total Gate Charge Q
g
5.8 10
Gate-Source Charge
gs
0.85
Gate-Drain Charge Q
gd
V
DS
= -6V, I
D
-2.3A
V
GS
= -4.5V
1.7
nC
Turn-On Delay Time t
d(on)
13 25
Turn-On Rise Time
r
36 60
Turn-Off Delay Time t
d(off)
42 70
Turn-Off Fall Time
f
V
DD
= -6V, RL=6?
I
D
-1.A, V
GEN = -4.5V
R
G
= 6
34 60
ns
Input Capacitance C
iss
415
Output Capacitance
oss
223
Reverse Transfer Capacitance C
rss
V
DS
= -6V, V
GS
= 0V
f = 1.0 MHz
87
pF
Source-Drain Diode
Max. Diode Forward Current I
S
Diode Forward Voltage V
SD
I
S
= -1.0A, V
GS
= 0V
-1.2 V
Pulse test: pulse width <= 300us, duty cycle<= 2%
I
DSS
DS
= -16V, V
GS
= 0V TJ=55
o
C V
-10
uA
?
-0.8
1)
1)
1)
C0094
C0094
Symbol Min.
Max. Typ. Unit
-1.6 A
SI2301
VOLTAGE RANG -20 Volts
-20V P-CHANNEL MOSFET
CURRENT -2.2 Ampere
4-22022.11 Rev.3.1 www.asemi99.com
C0095
On-Resistance vs. Drain Current
Output Characteristics Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I
D
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (A)
I
D
0
2
4
6
8
10
12345
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= -55C0095C
125C0095C
0, 0.5, 1 V
2.5 V
V
GS
= 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
1000
036912
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
0
1
2
3
4
5
02468
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
V
GS
C
rss
C
oss
C
iss
V
DS
= 6 V
I
D
= 2.8 A
-
On-Resistance (
r
DS(on)
C0087
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.8 A
T
J
- Junction Temperature (C0095C)
(Normalized)
-
On-Resistance (
r
DS(on)
C0087
)
V
GS
= 2.5 V
V
GS
= 4.5 V
25C0095C
SI2301
VOLTAGE RANG -20 Volts
-20V P-CHANNEL MOSFET
CURRENT -2.2 Ampere
4-32022.11 Rev.3.1 www.asemi99.com
0.01 0.10 1.00 10.00
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Power (W)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 0 50 100 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
02468
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1
Normalized Ef
fective
T
ransient
Thermal Impedance
30
-
On-Resistance (
r
DS(on)
C0087
)
V
SD
- Source-to-Drain Voltage (V) V
GS
- Gate-to-Source Voltage (V)
-
Source Current (A)
I
S
T
J
- Temperature (C0095C) Time (sec)
V
ariance (V)
V
GS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
I
D
= 2.8 A
I
D
= 250 C0109A
10
1
10
T
C
= 25C0095C
Single Pulse
14
12
8
4
0
T
J
= 25C0095C
T
J
= 150C0095C
2
6
10
SI2301
VOLTAGE RANG -20 Volts
-20V P-CHANNEL MOSFET
CURRENT -2.2 Ampere
4-42022.11 Rev.3.1 www.asemi99.com
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