CURRENT 16 Ampere
16N60
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, server/telecom
power, FPD TV power, ATX power, and industrial
power applications.
The Nell 16N60 is a three-terminal silicon
device with current conduction capability of 16A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
Low reverse transfer capacitance
(C = 5pF typical)RSS
R = 0.17? @ V = 10V DS(ON) GS
Ultra low gate charge(52.3nC max.)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
I (A)D 16
V (V)DSS 600
0.17 @ V = 10VGS
52.3
R (Ω)DS(ON)
Q (nC) max.G
N-Channel Power MOSFET
(16A, 600Volts)
TO-220AB
(16 )N60A
D
DESCRIPTION
FEATURES
GD
S SD
D (Drain)
G
(Gate)
S (Source)
TO-3PB
(16N60B)
TO-220F
(16 F)N60A
G
D
G
D
S
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-1 www.asemi99.com2022.3 Rev.2.0
UNITMin.
0.5
40
0.93
0.24
62.5
3.5
THERMAL RESISTANCE
TO-220AB/TO-3PB
TO-220F
TO-3PB
PARAMETER
Thermal resistance, junction to ambient
Thermal resistance, junction to case
TO-3PB
SYMBOL
Rth(j-c)
Rth(j-a)
Rth(c-s) Thermal resistance, case to heatsink
Typ. Max.
oC/W
UNIT
V/ns
V
W/ oC
A
mJ
oC
-55 to 150
VALUE
10.1
48
600
±30
5.3
600
1.08
100
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C
T =25°C to 150°CJ
TEST CONDITIONS
R =20K?GS
T =25°C C
T =100°C C
Operation junction temperature
Storage temperature
Single pulse avalanche energy(Note 2)
PARAMETER
Pulsed Drain current(Note 1)
Continuous Drain Current
MOSFET dv/dt ruggedness(Note 3)
Gate to Source voltage
Drain to Gate voltage
Drain to Source voltage
SYMBOL
VDGR
VDSS
dv/dt
VGS
IDM
TSTG
PD
ID
TJ
TL
. .lbf in (N m)
300Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
-55 to 150
Note: 1. .
Repetitive rating: pulse width limited by junction temperature.
10 (1.1)
1.6mm from case
IAR Avalanche current(Note 1)
1.34
T =25°C C
2.I = 5.3A, V = 50V, R = 25Ω, starting T =25°C.AS DD GS J
355
Repetitive avalanche energy(Note 1)EAR
3.I ≤ 16A, di/dt ≤ 200A/μs, V = 380V, starting T =25°C.SD DD J
0.29
Derate above 25 C°
I =16A, R =50?, V =10V AR GS GS
EAS I =5.3A, L=7.1mHAS
TO-220AB/TO-3PB
TO-220F
16
20Peak diode recovery dv/dt(Note 3)
WT =25°C C
TO-220AB/TO-3PB
TO-220F
Total power dissipation 134.4
35.7
TO-220AB/TO-220F
TO-220AB/TO220F
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-2 www.asemi99.com2022.3 Rev.2.0
UNIT
V
ns
μA
pF
nC
20.2
Max.
100
600
20
-100
100
0.73
1630
5
15.8
15.5
60.3
70
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C
I = 1mA, D V = 0VGS
TEST CONDITIONS
I = 1mA, D V =VDS GS
V =600V, V =0V DS GS T = 25°C C
Fall time
Gate to source reverse leakage current
Input capacitance
Total gate charge
Output capacitance
PARAMETER
Rise time
Gate to source forward leakage current
Turn-on delay time
Reverse transfer capacitance
Breakdown voltage temperature coefficient
Drain to source breakdown voltage
Turn-off delay time
SYMBOL
CISS
▲ ▲V /(BR)DSS TJ
V(BR)DSS
IGSS
QG
tr
tf
QGS 6.7Gate to source charge
Drain to source leakage currentIDSS
COSS
CRSS
td(ON)
td(OFF)
V/oC
Ω
nA
T =125°C C
Typ.Min.
10
52.3
V = 380V, DD
(Note1,2)
V = 10VGS
I = 8A, R = 4.7Ω D GS
V = 100V, V = 0V, f =1MHzDS GS
V = -30V, V = 0VGS DS
V = 30V, V = 0VGS DS
Forward transconductancegfs V = 40VDS l = 8A
D
Equivalent series resistance (G-S)ESR 2.9
V =480V, V =0V DS GS
13
S
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
2170
95
10
C eff.oss Effective output capacitance V = 0 to 480V, V = 0VDS GS 176
60
SWITCHING CHARACTERISTICS
50.4
41.6
41
130.6
40.2
V = 380V, DD
(Note1,2)
V = 10VGS
I = 8A, D
0.17 0.199Static drain to source on-state resistanceRDS(ON) V = 10V, l = 8A GS D
2 V4V =V , I =250μA GS DS DGate threshold voltageVGS(TH)
TO-3PB
TO-220AB/TO-220F
Output capacitanceCOSS V = 380V, V = 0V, f =1MHzDS GS 40
Gate to drain charge (Miller charge)QGD
Drain open
12.9
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C
SYMBOL
Is (IsD)
VSD
ISM
trr
Qrr
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
Reverse recovery time
Pulsed source current
Continuous source to drain current
Diode forward voltage
Reverse recovery charge
PARAMETER
I = 8A, V = 0VSD GS
Integral reverse P-N junction
diode in the MOSFET
I = 8A, V = 0V, SD GS
dI /dt = 100A/μs F
TEST CONDITIONS
D (Drain)
G
(Gate)
S (Source)
Min. Typ.
319
4.4
Max.
48
1.2
16
UNIT
V
μC
A
ns
Ω
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-3 www.asemi99.com2022.3 Rev.2.0
ORDERING INFORMATION SCHEME
MOSFET series
Current rating, ID
Voltage rating, VDS
16 = 16A
60 = 600V
16 N 60 B
Package type
A = TO-220AB
AF = TO-220F
B = TO-3P(B)
N = N-Channel
■ Gate charge test circuit & waveform
(D.U.T)
VGS
1mA
VDS
VGS
10V
Qg
Qgs Qgd
RL
Charge
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-4 www.asemi99.com2022.3 Rev.2.0
D.U.T.
RL
VDS
VGS
RG
VDD
VDS
VGS
90%
10%
td(ON) tr td(OFF) tf
VDD
Time
BVDSS
10V
ton toff
10V
RG
VDS
lD
L
D.U.T.
lAS
VDD
l (t)D
E = AS 12 2 L lAS
tP
V (t)DS
■ PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS
■ RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM
■ UNCLAMPED INDUCTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
D.U.T.
Driver
Same Type
as DUT
dv/dt controlled by R G
l controlled by pulse period SD
VDD
+
-
VDS
VGS
RG
ISD
VGS
(Driver)
lSD
(D.U.T)
(D.U.T)
VDS
10V
VDD
Gate Pulse Width
Gate Pulse PeriodD=
l , Body Diode Forward CurrentFM
lRM
di/dt
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
tp
L
·
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-5 www.asemi99.com2022.3 Rev.2.0
Fig.1 On-State characteristics
Drain-Source voltage, V (V)DS Gate-Source voltage, V (V)GS
Fig.4 Body diode forward voltage variation
vs. Source current and Temperatue
D
ra
in
Cu
rre
nt
, l
(A
)
D
R
ev
er
se
dr
ain
cu
rre
nt
, l
(A
)
S
D
ra
in
cu
rre
nt
, l
(A
)
D
Body diode forward voltage, V (V)SD
C
ap
ac
ita
nc
e (
pF
)
Drain-Source voltage, V (V)DS
Fig.3 On-Resistance variation vs. drain
current and gate voltage
D
ra
in-
So
ur
ce
O
n-
Re
sis
ta
nc
e,
R
(Ω
)
DS
(O
N)
Drain current, I (A)D
Fig.2 Transfer characteristics
100
101 20 2 4 6 8
0.3
0.2
0.1
0 10 20 30 40 50
0.4
0.6
Fig.5 Capacitance characteristics
Fig.6 Gate charge characteristics
G
at
e-
So
ur
ce
vo
lta
ge
,V
(V
)
GS
1000
7500
5000
2500
0
12
10
8
6
4
2
0
0 10 20 30 40 50
Total gate charge, Q (nC)G
10
100
0.2 0.4 0.6 0.8 1.0 1.2
10.1 10
1.4 1.6
0.1
10
1
0.1
150oC
25oC
-55oC
Note:
1. V = 20VDS
2. 250μs Pulse Test
0.5
V = 10VGS
V = 20VGS
Note:
T = 25°CC
150oC
25oC
Note:
1. V = 0VGS
2. 250μs Pulse Test
100 600
Coss
Ciss
Crss
C = ( )iss C +C C = shorted gs gd ds
C = C +Coss ds gd
C = Crss gd
Note:
1. V = 0VGS
2. f = 1 MHz
V = 120VDS
V = 380VDS
V = 480VDS
Note: l = 8AD
1
100
10
1
0.1
VGS
Top: 15V
10V
8V
7V
6V
5V
4.5V
Note:
1.
2. T
250μs Pulse Test
= 25°CC
4V
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-6 www.asemi99.com2022.3 Rev.2.0
Fig.7 Breakdown voltage variation vs.
Temperature
Fig.8 On-Resistance variation vs.
Temperature
Fig.9 Maximum safe operating area
( )16N60A/16N60B
Fig.10 Maximum safe operating area
(16N60AF)
D
ra
in-
So
ur
ce
br
ea
kd
ow
n v
olt
ag
e,
BV
(N
or
ma
liz
ed
)
Ds
s
D
ra
in-
So
ur
ce
O
n-
Re
sis
ta
nc
e,
R
Ds
(O
N)
(N
or
ma
liz
ed
)
D
ra
in
cu
rre
nt
, l
(A
)
D
D
ra
in
cu
rre
nt
, l
(A
)
D
1.2
1.1
1.0
0.9
0.8
-100 -50 0 50 100 150 200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 0 50 100 150
Junction temperature, T (°C)j Junction temperature, T (°C)J
Drain-Source voltage, V (V)DS Drain-Source voltage, V (V)DS
Fig.11 Maximum drain current vs.
Case temperature
20
15
10
5
025 50 75 100 125 150
D
ra
in
cu
rre
nt
, l
(A
)
D
Case temperature, T (°C)J
200-100
Note:
1. V = 0VGS
2. l = 250μAD 1mA
Note:
1. V = 10VGS
2. l = 8AD
Operation in This Area
by RDS (on)
is
Limited
DC
10ms
1ms
100μs
20μs
Note:
1. T = 25 CC
2. T
°
= 150°CJ
3. Sing Pulse
100
10
1
0.1
0.01
1 10 100 1000
Operation in This Area
by RDS (on)
is
Limited
10ms
1ms
100μs
Note:
1. T = 25 CC
2. T
°
= 150°CJ
3. Sing Pulse
20μs
DC
100
10
1
0.1
0.01
1 10 100 1000
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-7 www.asemi99.com2022.3 Rev.2.0
Th
erm
al
res
po
ns
e,
R
(°C
/W
)
th(
j-c
)
-410-510
-410-510
Th
erm
al
res
po
ns
e,
R
(°C
/W
)
th(
j-c
)
Fig.11-1 Transient thermal response curve
for 16N60B & 16N60A
Fig.11-2 Transient thermal response curve
for 16N60AF
Rectangular pulse duration (sec)
Rectangular pulse duration (sec)
PDM
Notes:
2. Duty factor, D = t / t1 2
3. T - T = P R (t) JM C DM th(j-c)
1. Rth(j-c) (t) = 0.93°C/W Max.
t1
t2
PDM
Notes:
2. Duty factor, D = t / t1 2
3. T - T = P R (t) JM C DM th(j-c)
1. Rth(j-c) (t) = 3.5°C/W Max.
t1
t2
2
1
0.1
0.01
0.005
5
1
0.1
0.01
10-3 10-2 -110 1
10-3 10-2
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
10-1 1 10 100
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-8 www.asemi99.com2022.3 Rev.2.0
Case Style
2.87 (0.113)
2.62 (0.103)
9.40 (0.370)
9.14 (0.360)
10.54 (0.415) MAX.
16.13 (0.635)
15.87 (0.625) PIN
4.06 (0.160)
3.56 (0.140)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096) 5.20 (0.205)
4.95 (0.195)
0.90 (0.035)
0.70 (0.028)
3.91 (0.154)
3.74 (0.148)
1 32
4.70 (0.185)
4.44 0.1754( )
1.39 (0.055)
1.14 (0.045)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
2.79 (0.110)
2.54 (0.100)
15.32 (0.603)
14.55 (0.573)
TO-220AB
TO-3P(B)
All dimensions in millimeters(inches)
15.6±0.4
9.62.0
4.
0
19
.9
±0
.3
20
.0
mi
n
4.
0 m
ax
2
3
1.05 +0.2-0.1
5.45±0.1 5.45±0.1
Φ3.2 0,1±
1.
8
5.
0
.
±0
2
4.8±0.2
2.0±0.1
0.65 +0.2-0.1
1.4
G D S
1 2 3
All dimensions in millimeters(inches)
D (Drain)
G
(Gate)
S (Source)
D (Drain)
G
(Gate)
S (Source)
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-9 www.asemi99.com2022.3 Rev.2.0
Case Style
TO-220F
2
1 3
3.3
3.1
13.7
13.5
All dimensions in millimeters
16.0
15.8
2.8
2.6
0.48
0.44
2.54
TYP
0.9
0.72.54
TYP
16.4
15.4
7.1
6.7
3.7
3.2
10.6
10.4
4.8
4.6
10°
2.85
2.65
3.4
3.1
D (Drain)
G
(Gate)
S (Source)
CURRENT 16 Ampere
16N60
VOLTAGE RANG 600 Volts
ASEMI MOSFET
10-10 www.asemi99.com2022.3 Rev.2.0
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