ASEMI MOSFET
CURRENT 3 Ampere
SI2302
VOLTAGE RANG 20 Volts
FEATURES
SI2302
High dense cell design for extremely low R
DS(ON)
N-Channel MOSFET
Rugged and reliable
Case Material: Molded Plastic.
o
Absolute Maximum Ratings (TA=25 C, unless otherwise noted)
Parameter Symbol Ratings Unit
VDS
Drain-Source Voltage 20 V
VGS
Gate-source Voltage 8 V
1.Gate
2.Source
Drain Current (Continuous) ID 3 A
SOT-23
3.Drain
a
Drain Current (Pulsed) IDM 10 A
D
Total Power Dissipation @TA=25oC PD 1.25 W
Operating Junction and Storage Temperature Range T T -55 to +150 °C
j, stg
b
Thermal Resistance Junction to Ambient (PCB mounted) R 100 °C/W
θJA
G
S
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV V = 0V, I = 10μA 20 V
DSS GS D
I V = 20V, V = 0V
Zero Gate Voltage Drain Current 1 μA
DSS DS GS
I V = 8V, V = 0V
Gate Body Leakage Current, Forward 100 nA
GSSF GS DS
V = -8V, V = 0V
Gate Body Leakage Current, Reverse IGSSR -100 nA
GS DS
c
On Characteristics
Gate Threshold Voltage V V = V , I = 50μA 0.65 1.2 V
GS(th) GS DS D
V = 4.5V, I = 3.6A
Static Drain-Source 55 72 m?
GS D
R
DS(on)
V = 2.5V, I = 3.1A
On-Resistance 82 110 m?
GS D
g V = 5V, I = 3.6A
Forwand Transconductance 8.5 S
FS DS D
d
Dynamic Characteristics
C
Input Capacitance 237 pF
iss
V = 10V, V = 0V, f = 1.0
DS GS
MHz
C
Output Capacitance 120 pF
oss
C
Reverse Transfer Capacitance 45 pF
rss
d
Switching Characteristics
Turn-On Delay Time t 23 45 ns
d(on)
V = 10V, I = 3.6A, V =
DD D GS
4.5V, R = 6?
Turn-On Rise Time t 11 30 ns
GEN
r
t
Turn-Off Delay Time 34 70 ns
d(off)
t
Turn-On Fall Time 36 70 ns
f
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3-1
2022.3 Rev.2.0V =2.0V
GS
V =1.5V
GS
ASEMI MOSFET
CURRENT 3 Ampere
SI2302
VOLTAGE RANG 20 Volts
Q
Total Gate Charge 6 10 nC
g
V = 10V, I = 3.6A, V =
DS D GS
4.5V
Gate-Source Charge Q 1.4 nC
gs
Q
Gate-Drain Charge 1.8 nC
gd
Drain-Source Diode Characteristics and Maximun Ratings
c
I 0.94 A
Drain-Source Diode Forward Current S
d
V V = 0V, I = 0.94A
1.2 V
Drain-Source Diode Forward Voltage SD GS S
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board,t<10 sec.
c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Typical Characteristics
SI2302
10 10
25 C
V =4.5,3.5,2.5V
GS
8 8
6 6
4 4
2 2
T =125 C
-55 C
J
0
0
012345
012 3
VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
600 2.2
I =3.6A
D
V =4.5V
GS
1.9
500
1.6
400
1.3
300
C
iss
1.0
200
C
oss
0.7
100
C
rss
0.4
0
0510152025 -100 -50 0 50 100 150 200
VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)
Figure 3. Capacitance Figure 4. On-Resistance Variation
with Temperature
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3-2
2022.3 Rev.2.0
C, Capacitance (pF) ID, Drain Current (A)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms) ID, Drain Current (A)V =0V
GS
ASEMI MOSFET
CURRENT 3 Ampere
SI2302
VOLTAGE RANG 20 Volts
SI2302 Typical Characteristics
1.3
V =V
DS GS
I =250μA
1.2 D
1
1.1 10
1.0
0.9
0
10
0.8
0.7
-1
0.6
10
-50 -25 0 25 50 75 100 125 150
0.2 0.4 0.6 0.8 1.0 1.2
TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage
with Temperature Variation with Source Current
5
V =10V
DS
I =3.6A
D
R Limit
DS(ON)
1
4
10
1ms
10ms
3
100ms
0
10
1s
DC
2
-1
10
1
T =25 C
A
T =150 C
J
Single Pulse
-2
0
10
-1 0 1 2
0246
10 10 10 10
Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge Figure 8. Maximum Safe
Operating Area
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3-3
2022.3 Rev.2.0
VTH, Normalized
VGS, Gate to Source Voltage (V)
Gate-Source Threshold Voltage
ID, Drain Current (A)
IS, Source-drain current (A) |
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