General Description
The MAX5048A/MAX5048B are high-speed MOSFET
drivers capable of sinking/sourcing 7.6A/1.3A peak cur-
rents. These devices take logic input signals and drive
a large external MOSFET. The MAX5048A/MAX5048B
have inverting and noninverting inputs that give the
user greater flexibility in controlling the MOSFET. They
feature two separate outputs working in complementary
mode, offering flexibility in controlling both turn-on and
turn-off switching speeds.
The MAX5048A/MAX5048B have internal logic circuitry,
which prevents shoot-through during output state
changes. The logic inputs are protected against volt-
age spikes up to +14V, regardless of V+ voltage.
Propagation delay time is minimized and matched
between the inverting and noninverting inputs. The
MAX5048A/MAX5048B have very fast switching times
combined with very short propagation delays (12ns
typ), making them ideal for high-frequency circuits.
The MAX5048A/MAX5048B operate from a +4V to
+12.6V single power supply and typically consume
0.95mA of supply current. The MAX5048A has CMOS
input logic levels, while the MAX5048B has standard
TTL input logic levels. These devices are available in a
space-saving 6-pin SOT23 package.
Applications
Power MOSFET Switching
Switch-Mode Power Supplies
DC-DC Converters
Motor Control
Power-Supply Modules
Features
a111 Independent Source-and-Sink Outputs for
Controllable Rise and Fall Times
a111 +4V to +12.6V Single Power Supply
a111 7.6A/1.3A Peak Sink/Source Drive Current
a111 0.23? Open-Drain N-Channel Sink Output
a111 2? Open-Drain P-Channel Source Output
a111 12ns (typ) Propagation Delay
a111 Matching Delay Time Between Inverting and
Noninverting Inputs
a111 V
CC
/2 CMOS (MAX5048A)/TTL (MAX5048B) Logic
Inputs
a111 1.6V Input Hysteresis
a111 Up to +14V Logic Inputs (Regardless of V+
Voltage)
a111 Low Input Capacitance: 2.5pF (typ)
a111 -40°C to +125°C Operating Temperature Range
a111 6-Pin SOT23 Package
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
________________________________________________________________ Maxim Integrated Products 1
P_OUT
GNDN_OUT
16IN+
5 IN-
V+
MAX5048A
MAX5048B
SOT23
TOP VIEW
2
34
Pin Configuration
Ordering Information
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
V+
N
Typical Operating Circuit
19-2419; Rev 2; 5/03
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
PART TEMP RANGE
PIN-
PACKAGE
LOGIC
INPUT
TOP
MARK
MAX5048AAUT-T -40°C to +125°C 6 SOT23-6
V
CC
/2
CMOS
ABEC
MAX5048BAUT-T -40°C to +125°C 6 SOT23-6 TTL ABED
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V+ = +12V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Voltages Referenced to GND
V+...........................................................................-0.3V to +13V
IN+, IN-...................................................................-0.3V to +14V
N_OUT, P_OUT ............................................-0.3V to (V+ + 0.3V)
N_OUT Continuous Output Current (Note 1) ....................390mA
P_OUT Continuous Output Current (Note 1).....................100mA
Continuous Power Dissipation (T
A
= +70°C)
6-Pin SOT23 (derate 9.1mW/°C above +70°C)............727mW
Junction to Case Thermal Resistance, θ
JC
......................75°C/W
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Continuous output current is limited by the power dissipation of the SOT23 package.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
V+ Operating Range V+ 4.0 12.6 V
V+ Undervoltage Lockout UVLO V+ rising 3.25 3.6 4.00 V
V+ Undervoltage Lockout
Hysteresis
400 mV
V+ Undervoltage Lockout to
Output Delay Time
V+ rising 300 ns
V+ Supply Current I+ IN+ = IN- = V+ 0.95 1.5 mA
N-CHANNEL OUTPUT
T
A
= +25°C 0.23 0.26
V+ = +10V,
I
N-OUT
= -100mA
T
A
= +125°C 0.38 0.43
T
A
= +25°C 0.24 0.28
Driver Output Resistance—
Pulling Down
R
ON-N
V+ = +4.5V,
I
N-OUT
= -100mA
T
A
= +125°C 0.40 0.47
?
Power-Off Pulldown Resistance V+ = 0 or floating, I
N-OUT
= -10mA, T
A
= +25°C 3.3 10 ?
Power-Off Pulldown Clamp
Voltage
V+ = 0 or floating, I
N-OUT
= -10mA,
T
A
= +25°C
0.85 1.0 V
Output Leakage Current I
LK-N
N_OUT = V+ 6.85 20 μA
Peak Output Current (Sinking) I
PK-N
C
L
= 10,000pF 7.6 A
P-CHANNEL OUTPUT
T
A
= +25°C 2.00 3.00
V+ = +10V,
I
P-OUT
= 50mA
T
A
= +125°C 2.85 4.30
T
A
= +25°C 2.20 3.30
Driver Output Resistance—
Pulling Up
R
ON-P
V+ = +4.5V,
I
P-OUT
= 50mA
T
A
= +125°C 3.10 4.70
?
Output Leakage Current I
LK-P
P_OUT = 0 0.001 10 μA
Peak Output Current (Sourcing) I
PK-P
C
L
= 10,000pF 1.3 A
LOGIC INPUT
MAX5048A 0.67 x V+
Logic 1 Input Voltage V
IH
MAX5048B 2.4
V
MAX5048A 0.33 x V+
Logic 0 Input Voltage V
IL
MAX5048B 0.8
V
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V+ = +12V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
MAX5048A 1.6
Logic Input Hysteresis V
HYS
MAX5048B 0.68
V
Logic Input Current V
IN_
= V+ or 0 0.001 10 μA
Input Capacitance C
IN
2.5 pF
SWITCHING CHARACTERISTICS FOR V+ = +10V
C
L
= 1000pF 8
C
L
= 5000pF 45Rise Time t
R
C
L
= 10,000pF 82
ns
C
L
= 1000pF 3.2
C
L
= 5000pF 7.5Fall Time t
F
C
L
= 10,000pF 12.5
ns
Turn-On Propagation Delay Time t
D-ON
Figure 1, C
L
= 1000pF (Note 3) 7 12 25 ns
Turn-Off Propagation Delay Time t
D-OFF
Figure 1, C
L
= 1000pF (Note 3) 7 12 25 ns
Break-Before-Make Time 2.5 ns
SWITCHING CHARACTERISTICS FOR V+ = +4.5V
C
L
= 1000pF 12
C
L
= 5000pF 41Rise Time tR
C
L
= 10,000pF 74
ns
C
L
= 1000pF 3.0
C
L
= 5000pF 7.0Fall Time t
F
C
L
= 10,000pF 11.3
ns
Turn-On Propagation Delay Time t
D-ON
Figure 1, C
L
= 1000pF (Note 3) 8 14 27 ns
Turn-Off Propagation Delay Time t
D-OFF
Figure 1, C
L
= 1000pF (Note 3) 8 14 27 ns
Break-Before-Make Time 4.2 ns
Note 2: All DC specifications are 100% tested at T
A
= +25°C. Specifications over -40°C to +125°C are guaranteed by design.
Note 3: Guaranteed by design, not production tested.
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
4 _______________________________________________________________________________________
Typical Operating Characteristics
(C
L
= 1000pF, T
A
= +25°C, unless otherwise noted.)
RISE TIME vs. SUPPLY VOLTAGE
MAX5048 toc01
SUPPLY VOLTAGE (V)
RISE TIME (ns)
1086
8
11
14
17
20
5
412
T
A
= +125°C
T
A
= 0°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
FALL TIME vs. SUPPLY VOLTAGE
MAX5048 toc02
SUPPLY VOLTAGE (V)
FALL TIME (ns)
1086
2.5
3.5
4.5
5.0
6.0
2.0
412
T
A
= +125°C
T
A
= -40°CT
A
= 0°C
T
A
= +85°C
T
A
= +25°C
3.0
5.5
4.0
MAX5048 toc03
SUPPLY VOLTAGE (V)
PROPAGATION DELAY (ns)
1086
12
14
16
18
20
10
412
T
A
= +125°C
T
A
= -40°C
T
A
= 0°C
T
A
= +85°C
T
A
= +25°C
PROPAGATION DELAY TIME, LOW-TO-HIGH
vs. SUPPLY VOLTAGE
MAX5048 toc04
SUPPLY VOLTAGE (V)
PROPAGATION DELAY (ns)
1086
12
14
16
18
20
10
412
T
A
= +125°C
T
A
= -40°CT
A
= 0°C
T
A
= +85°C
T
A
= +25°C
PROPAGATION DELAY TIME, HIGH-TO-LOW
vs. SUPPLY VOLTAGE SUPPLY CURRENT vs. SUPPLY VOLTAGE
MAX5048 toc05
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
1086
2
4
6
8
10
12
0
412
DUTY CYCLE = 50%
V+ = +10V, C
L
= 0
1MHz
500kHz
40kHz75kHz100kHz
SUPPLY CURRENT vs. LOAD CAPACITANCE
MAX5048 toc06
LOAD CAPACITANCE (pF)
SUPPLY CURRENT (mA)
16001200400 800
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0 2000
V+ = +10V
f = 100kHz
DUTY CYCLE = 50%
SUPPLY CURRENT vs. TEMPERATURE
MAX5048 toc07
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
1007550250-25
1.3
1.4
1.5
1.6
1.7
1.8
1.2
-50 125
V+ = +10V
f = 100kHz, C
L
= 0
DUTY CYCLE = 50%
MAX5048A
INPUT THRESHOLD VOLTAGE
vs. SUPPLY VOLTAGE
MAX5048 toc08
SUPPLY VOLTAGE (V)
INPUT THRESHOLD VOLTAGE (V)
1086
1
2
3
4
5
6
7
8
0
412
RISING
FALLING
MAX5048A
SUPPLY CURRENT vs. INPUT VOLTAGE
MAX5048 toc09
INPUT VOLTAGE (V)
SUPPLY CURRENT (mA)
108642
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0.8
012
INPUT
HIGH-TO-LOW
INPUT
LOW-TO-HIGH
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
_______________________________________________________________________________________ 5
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C
L
= 5000pF)
MAX5048 toc10
IN+
2V/div
OUTPUT
2V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C
L
= 10,000pF)
MAX5048 toc11
IN+
2V/div
OUTPUT
2V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C
L
= 5000pF)
MAX5048 toc12
IN+
2V/div
OUTPUT
2V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C
L
= 10,000pF)
MAX5048 toc13
IN+
2V/div
OUTPUT
2V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +12V, C
L
= 5000pF)
MAX5048 toc14
IN+
5V/div
OUTPUT
5V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +12V, C
L
= 10,000pF)
MAX5048 toc15
IN+
5V/div
OUTPUT
5V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +12V, C
L
= 5000pF)
MAX5048 toc16
IN+
5V/div
OUTPUT
5V/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +12V, C
L
= 10,000pF)
MAX5048 toc17
IN+
5V/div
OUTPUT
5V/div
20ns/div
Typical Operating Characteristics (continued)
(C
L
= 1000pF, T
A
= +25°C, unless otherwise noted.)
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
6 _______________________________________________________________________________________
Detailed Description
Logic Inputs
The MAX5048A/MAX5048Bs’ logic inputs are protected
against voltage spikes up to +14V, regardless of the V+
voltage. The low 2.5pF input capacitance of the inputs
reduces loading and increases switching speed. These
devices have two inputs that give the user greater flexi-
bility in controlling the MOSFET. Table 1 shows all pos-
sible input combinations.
The difference between the MAX5048A and the
MAX5048B is the input threshold voltage. The
MAX5048A has V
CC
/2 CMOS logic-level thresholds,
while the MAX5048B has TTL logic-level thresholds (see
the Electrical Characteristics). For V+ above 5.5V, V
IH
(typ) = 0.5x(V+) + 0.8V and V
IL
(typ) = 0.5x(V+) - 0.8V.
As V+ is reduced from 5.5V to 4V, V
IH
and V
IL
gradually
approach V
IH
(typ) = 0.5x(V+) + 0.65V and V
IL
(typ) =
0.5x(V+) - 0.65V. Connect IN+ to V+ or IN- to GND
when not used. Alternatively, the unused input can be
used as an ON/OFF pin (see Table 1).
Undervoltage Lockout (UVLO)
When V+ is below the UVLO threshold, the N-channel
is ON and the P-channel is OFF, independent of the
state of the inputs. The UVLO is typically 3.6V with
400mV typical hysteresis to avoid chattering.
Driver Outputs
The MAX5048A/MAX5048B provide two separate out-
puts. One is an open-drain P-channel, the other an
open-drain N-channel. They have distinct current sourc-
ing/sinking capabilities to independently control the rise
and fall times of the MOSFET gate. Add a resistor in
series with P_OUT/N_OUT to slow the corresponding
rise/fall time of the MOSFET gate.
Applications Information
Supply Bypassing, Device Grounding,
and Placement
Ample supply bypassing and device grounding are
extremely important because when large external
capacitive loads are driven, the peak current at the V+
pin can approach 1.3A, while at the GND pin the peak
current can approach 7.6A. V
CC
drops and ground
shifts are forms of negative feedback for inverters and, if
excessive, can cause multiple switching when the IN-
input is used and the input slew rate is low. The device
driving the input should be referenced to the
MAX5048A/MAX5048B GND pin especially when the IN-
input is used. Ground shifts due to insufficient device
grounding may disturb other circuits sharing the same
AC ground return path. Any series inductance in the V+,
P_OUT, N_OUT and/or GND paths can cause oscilla-
tions due to the very high di/dt that results when the
MAX5048A/MAX5048B are switched with any capacitive
load. A 0.1μF or larger value ceramic capacitor is rec-
ommended bypassing V+ to GND and placed as close
to the pins as possible. When driving very large loads
(e.g., 10nF) at minimum rise time, 10μF or more of paral-
lel storage capacitance is recommended. A ground
plane is highly recommended to minimize ground return
resistance and series inductance. Care should be taken
to place the MAX5048A/MAX5048B as close as possi-
ble to the external MOSFET being driven to further mini-
mize board inductance and AC path resistance.
Power Dissipation
Power dissipation of the MAX5048A/MAX5048B con-
sists of three components, caused by the quiescent
current, capacitive charge and discharge of internal
nodes, and the output current (either capacitive or
resistive load). The sum of these components must be
kept below the maximum power-dissipation limit.
Pin Description
PIN NAME FUNCTION
1V+
Power Supply. Bypass to GND with a
0.1μF ceramic capacitor.
2 P_OUT
P-Channel Open-Drain Output. Sources
current for MOSFET turn on.
3 N_OUT
N-Channel Open-Drain Output. Sinks
current for MOSFET turn off.
4 GND Ground
5 IN-
Inverting Logic Input Terminal. Connect
to GND when not used.
6 IN+
Noninverting Logic Input Terminal.
Connect to V+ when not used.
IN+ IN- P-CHANNEL N-CHANNEL
L L OFF ON
L H OFF ON
H L ON OFF
H H OFF ON
Table 1. Truth Table
L = Logic low
H = Logic high
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
_______________________________________________________________________________________ 7
The quiescent current is 0.95mA typical. The current
required to charge and discharge the internal nodes is
frequency dependent (see the Typical Operating
Characteristics). The MAX5048A/MAX5048B power dis-
sipation when driving a ground referenced resistive
load is:
P = D x R
ON(MAX)
x I
LOAD
2
where D is the fraction of the period the MAX5048A/
MAX5048Bs’ output pulls high, R
ON (MAX)
is the maxi-
mum on-resistance of the device with the output high
(P-channel), and I
LOAD
is the output load current of the
MAX5048A/MAX5048B.
For capacitive loads, the power dissipation is:
P = C
LOAD
x (V+)
2
x FREQ
where C
LOAD
is the capacitive load, V+ is the supply
voltage, and FREQ is the switching frequency.
Layout Information
The MOSFET drivers MAX5048A/MAX5048B source-
and-sink large currents to create very fast rise and fall
edges at the gate of the switching MOSFET. The high
di/dt can cause unacceptable ringing if the trace
lengths and impedances are not well controlled. The
following PC board layout guidelines are recommended
when designing with the MAX5048A/MAX5048B:
? Place one or more 0.1μF decoupling ceramic capaci-
tor(s) from V+ to GND as close to the device as possi-
ble. At least one storage capacitor of 10μF (min)
should be located on the PC board with a low resis-
tance path to the V+ pin of the MAX5048A/MAX5048B.
? There are two AC current loops formed between the
device and the gate of the MOSFET being driven.
The MOSFET looks like a large capacitance from
gate to source when the gate is being pulled low.
The active current loop is from N_OUT of the
MAX5048A/MAX5048B to the MOSFET gate to the
MOSFET source and to GND of the MAX5048A/
MAX5048B. When the gate of the MOSFET is being
pulled high, the active current loop is from P_OUT of
the MAX5048A/MAX5048B to the MOSFET gate to
the MOSFET source to the GND terminal of the
decoupling capacitor to the V+ terminal of the
decoupling capacitor and to the V+ terminal of the
MAX5048A/MAX5048B. While the charging current
loop is important, the discharging current loop is crit-
ical. It is important to minimize the physical distance
and the impedance in these AC current paths.
IN+
V
IL
90%
10%
t
D–OFF
P_OUT AND
N_OUT
TIED
TOGETHER
t
D–ON
t
F
t
R
IN+
IN-
V+V+
C
L
N_OUT
GND
P_OUT
TEST CIRCUIT
TIMING DIAGRAM
MAX5048A
MAX5048B
INPUT
OUTPUT
V
IH
Figure 1. Timing Diagram and Test Circuit
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
8 _______________________________________________________________________________________
? In a multilayer PC board, the component surface
layer surrounding the MAX5048A/MAX5048B should
consist of a GND plane containing the discharging
and charging current loops.
Chip Information
TRANSISTOR COUNT: 676
PROCESS: BiCMOS
BREAK-
BEFORE-
MAKE
CONTROL
P
N
N_OUT
GND
IN-
IN+
P_OUT
V+
MAX5048A
MAX5048B
Figure 2. MAX5048A/MAX5048B Functional Diagram
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
V
S
V+
(4V TO 12.6V)
Figure 3. Noninverting Application
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
V
S
V
OUT
FROM PWM
CONTROLLER
(BOOST)
V+
(4V TO 12.6V)
Figure 4. Boost Converter
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
MAX5048A/
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
FROM PWM
CONTROLLER
(BUCK)
V
OUT
4V TO 12V
P
N
Figure 5. MAX5048A/MAX5048B in High-Power Synchronous
Buck Converter
MAX5048
7.6A, 12ns, SOT23 MOSFET Driver
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 _____________________ 9
? 2003 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
6LSOT.EPS
F
1
1
21-0058
PACKAGE OUTLINE, SOT-23, 6L
|
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