Datasheet Please read the Important Notice and Warnings at the end of this document
www.infineon.com page 1 of 15 2020-04-27
IMBF170R1K0M1
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
? Revolutionary semiconductor material - Silicon Carbide
? Optimized for fly-back topologies
? 12V/0V gate-source voltage compatible with most fly-back controllers
? Very low switching losses
? Benchmark gate threshold voltage, VGS(th) = 4.5V
? Fully controllable dV/dt for EMI optimization
Benefits
? Reduction of system complexity
? Directly drive from fly-back controller
? Efficiency improvement and cooling effort reduction
? Enabling higher frequency
Potential applications
? Energy generation
o Solar string inverter
o Solar Central inverter
? Industrial power supplies
o Industrial UPS
o Industrial SMPS
? Infrastructure – Charger
o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction
recommended for forward operation mode only
Table 1 Key Performance and Package Parameters
Type VDS ID
TC = 25°C, Rth(j-c,max)
RDS(on)
Tvj = 25°C, ID = 1A, VGS = 12V
Tvj,max Marking Package
IMBF170R1K0M1 1700V 5.2A 1000mΩ 175°C 170M11K0 PG-TO263-7
Dr a in
S o u rc e
p i n 3 ~ 7
Ga te
p i n 1
Se n s e
p i n 2
Datasheet 2 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
1700V SiC Trench MOSFET
Table of contents
Table of contents
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1 Maximum ratings ................................................................................................................... 3
2 Thermal resistances ............................................................................................................... 4
3 Electrical Characteristics ........................................................................................................ 5
3.1 Static characteristics ............................................................................................................................... 5
3.2 Dynamic characteristics .......................................................................................................................... 6
3.3 Switching characteristics ........................................................................................................................ 7
4 Electrical characteristic diagrams ............................................................................................ 8
5 Package drawing ................................................................................................................... 12
6 Test conditions ..................................................................................................................... 13
Revision history............................................................................................................................. 14
Datasheet 3 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Maximum ratings
1 Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2 Maximum ratings
Parameter Symbol Value Unit
Drain-source voltage, Tvj ≥ 25°C VDSS 1700 V
DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 12V,
TC = 25°C
TC = 100°C
ID
5.2
3.7
A
Pulsed drain current, tp limited by Tvjmax, VGS = 12V ID,pulse1 13.3 A
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
VGS
VGS,on
VGS,off
-10… 20
12… 15
0
V
Power dissipation, limited by Tvjmax
TC = 25°C
TC = 100°C
Ptot 68
34
W
Virtual junction temperature Tvj -55… 175 °C
Storage temperature Tstg -55… 150 °C
Soldering temperature
Reflow soldering (MSL1 according to JEDEC J-STD-020) Tsold 260 °C
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet 4 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Thermal resistances
2 Thermal resistances
Table 3
Parameter Symbol Conditions Value Unit min. typ. max.
MOSFET thermal
resistance, junction –
case
Rth(j-c)
- 1.7 2.2 K/W
Thermal resistance,
junction – ambient Rth(j-a) leaded - - 62 K/W
Datasheet 5 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical Characteristics
3 Electrical Characteristics
3.1 Static characteristics
Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter Symbol Conditions Value Unit
min. typ. max.
Drain-source on-state
resistance
RDS(on) VGS = 12V, ID = 1A,
Tvj = 25°C
Tvj = 100°C
Tvj = 175°C
VGS = 15V, ID = 1A,
Tvj = 25°C
-
-
-
-
1000
1416
2037
809
-
-
-
880
mΩ
Gate-source threshold
voltage
VGS(th) (tested after 1 ms pulse at
VGS = 20V)
ID = 1.1mA, VDS = VGS
Tvj = 25°C
Tvj =175°C
3.5
-
4.5
3.6
5.7
-
V
Zero gate voltage drain
current
IDSS VGS = 0V, VDS = 1700V
Tvj = 25°C
Tvj = 175°C
-
-
0.4
6
11
-
μA
Gate-source leakage
current
IGSS VGS = 20V, VDS = 0V - - 100 nA
VGS = -10V, VDS = 0V - - -100 nA
Transconductance gfs VDS = 20V, ID = 1A - 0.42 - S
Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 35 - Ω
Datasheet 6 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical Characteristics
3.2 Dynamic characteristics
Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified)
Parameter Symbol Conditions Value Unit min. typ. max.
Input capacitance Ciss
VDD = 1000V, VGS = 0V,
f = 1MHz, VAC = 25mV
- 275 -
pF Output capacitance Coss - 7.2 -
Reverse capacitance Crss - 0.7 -
Coss stored energy Eoss - 1.3 - μJ
Total gate charge QG V
DD = 1000V, ID = 1A,
VGS = 0/12V, turn-on pulse
- 5 -
nC Gate to source charge QGS,pl - 1.5 -
Gate to drain charge QGD - 1.6 -
Datasheet 7 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical Characteristics
3.3 Switching characteristics
Table 6 Switching characteristics, Inductive load 3
Parameter Symbol Conditions Value Unit
min. typ. max.
MOSFET Characteristics, Tvj = 25°C
Turn-on delay time td(on) VDD = 1000V, ID = 1A,
VGS = 0/12V, RG,ext = 22Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
- 19 -
ns Rise time tr - 14 - Turn-off delay time t
d(off) - 20 -
Fall time tf - 22 -
Turn-on energy Eon - 31 -
μJ Turn-off energy Eoff - 7 -
Total switching energy Etot - 37 -
MOSFET Characteristics, Tvj = 175°C
Turn-on delay time td(on) VDD = 1000V, ID = 1A,
VGS = 0/12V, RG,ext = 22Ω,
Lσ = 40nH,
diode:
body diode at VGS = 0V
see Fig. E
- 16 -
ns Rise time tr - 11 - Turn-off delay time t
d(off) - 23 -
Fall time tf - 23 -
Turn-on energy Eon - 33 -
μJ Turn-off energy Eoff - 8 -
Total switching energy Etot - 41 -
3 The chip technology was characterized up to 200 kV/μs. The measured dV/dt was limited by measurement test
setup and package. In applications, e.g. fly-back topology, the switching behavior highly depends on the
circuitry (transformer, snubber…), the switching loss in the application will be different from the datasheet
value.
Datasheet 8 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical characteristic diagrams
4 Electrical characteristic diagrams
Figure 1 Safe operating area (SOA)
(VGS = 0/12V, Tc = 25°C, Tj ≤ 175°C)
Figure 2 Power dissipation as a function of case
temperature limited by bond wire
(Ptot = f(TC))
Figure 3 Maximum DC drain to source current
as a function of case temperature
limited by bond wire (IDS = f(TC))
Figure 4 Typical transfer characteristic
(IDS = f(VGS), VDS = 20V, tP = 20μs)
0
5
10
15
0 500 1 0 0 0 1 5 0 0 2 0 0 0
I DS
[
A
]
V
DS
[ V ]
n o t f o r l i n e a r u s e
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175
P
t
o
t
[
W
]
T
C
[ C]
R
t h ( j- c , m a x )
R
t h ( j- c , t y p )
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175
I DS
[
A
]
T
C
[ C]
R
t h ( j- c , m a x )
R
t h ( j- c , t y p )
0
5
10
15
20
0 5 10 15 20
I DS
[
A
]
V
GS
[ V ]
T v j = 2 5 ° C
T v j = 1 7 5 ° C
Datasheet 9 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 5 Typical gate-source threshold voltage
as a function of junction temperature
(VGS(th) = f(Tvj), IDS = 1.1mA, VGS = VDS)
Figure 6 Typical on-resistance as a function of
junction temperature
(RDS(on) = f(Tvj), IDS = 1A)
Figure 7 Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=25°C, tP = 20μs)
Figure 8 Typical output characteristic, VGS as
parameter
(IDS = f(VDS), Tvj=175°C, tP = 20μs)
0
1
2
3
4
5
6
- 5 0 -2 5 0 25 50 75 100 125 150 175
V
GS
(
t
h
)
[
V
]
T
vj
[ C]
0
250
500
750
1 0 0 0
1 2 5 0
1 5 0 0
1 7 5 0
2 0 0 0
-5 0 - 2 5 0 25 50 75 100 125 150 175
R
D
S
(
O
N
)
[
mO
h
m]
T
vj
[ C]
V G S = 1 2 V
V G S = 1 5 V
0
5
10
15
0 5 10 15 20
I DS
[
A
]
V
DS
[ V ]
15V
12V
9V
6V
0
2
4
6
8
10
0 5 10 15 20
I DS
[
A
]
V
DS
[ V ]
15V
12V
9V
6V
Datasheet 10 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 9 Typical capacitance as a function of
drain-source voltage
(C = f(VDS), VGS = 0V, f = 1MHz)
Figure 10 Typical gate charge
(VGS = f(QG), IDS = 1A, VDS = 1000V, turn-on
pulse)
Figure 11 Typical switching energy losses as a
function of gate resistance
(E = f(RG,ext), VDD = 1000V, VGS = 0V/12V,
ID = 1A, Tvj = 175°C, ind. load, test circuit
in Fig. E, diode: body diode at VGS =
0V)
Figure 12 Typical switching energy losses as a
function of junction temperature
(E = f(Tvj), VDD = 1000V, VGS = 0V/12V,
RG,ext = 22Ω, ID = 1A, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
1
10
100
1 0 0 0
1 10 100 1 0 0 0
C
[
p
F
]
V
DS
[ V ]
C is s
C o s s
C r s s
0
5
10
15
0 2 4 6
V
GS
[
V
]
Q
G
[ n C ]
0
25
50
75
100
10 30 50 70 90 110
E
[
μJ
]
R
G
[ O h m]
E t o t
E o n
E o ff
0
10
20
30
40
50
25 75 125 175
E
(μJ
)
T
vj
( ° C)
E t o t
E o n
E o f f
Datasheet 11 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Electrical characteristic diagrams
Figure 13 Typical switching energy losses as a
function of drain-source current
(E = f(IDS), VDD = 1000V, VGS = 0V/12V,
RG,ext = 22Ω, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
Figure 14 Typical switching times as a
function of gate resistor
(t = f(RG,ext), VDD = 1000V, VGS = 0V/12V,
ID = 1A, Tvj = 175°C, ind. load, test
circuit in Fig. E, diode: body diode at
VGS = 0V)
Figure 15 Max. transient thermal resistance (MOSFET)
(Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D)
0
25
50
75
100
125
150
175
200
1 2 3 4 5
E
(μJ
)
I
D
(A )
E t o t
E o n
E o f f
0
10
20
30
40
50
10 30 50 70 90 110
T
ime
[
n
s
]
R
G
[ O h m]
t d ( o n )
tr
t d ( o f f )
tf
1 E -2
1 E -1
1 E 0
1 E -6 1 E -5 1 E -4 1 E -3 1 E -2 1 E -1 1 E 0
Z
T
H
j
c
[
K
/
W
]
t
p
[ s ]
0 . 5
0 . 2
0 . 1
0 . 0 5
0 . 0 2
0 . 0 1
S i n g l e p u l s e
Datasheet 12 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Package drawing
5 Package drawing
PG-TO263-7-13
Figure 16 Package drawing
Datasheet 13 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Test conditions
6 Test conditions
Figure 17 Test conditions
Datasheet 14 of 15 2.1
2020-04-27
IMBF170R1K0M1
CoolSiC? 1700V SiC Trench MOSFET
Revision history
Revision history
Document
version
Date of release Description of changes
2.1 2020-04-27 Final Datasheet
Published by
Infineon Technologies AG
81726 München, Germany
? Infineon Technologies AG 2020.
All Rights Reserved.
Important notice
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(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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