ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
0.640(16.25) 0.199(5.05)
0.620(15.75)
0.175(4.45)
0.142(3.60)
0.125(3.20)
FEATURES
R =0.24 ? @ V =10V
DS (ON) GS
High Switching Speed
100% Avalanche Tested
0.095(2.40)
0.087(2.20)
0.070(1.80)
0.126(3.20)
SYMBOL
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.030(0.75)
0.017(0.45)
0.225(5.70) 0.225(5.70)
0.204(5.20) 0.204(5.20)
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
24N50L-T47-T 24N50G-T47-T TO-247 G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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6-1
2022.3 Rev.2.0
0.600(15.25)
0.170(4.30)
0.145(3.70) 0.580(14.75)
0.798(20.25) 0.839(21.30)
0.777(19.75) 0.819(20.80)
ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
ABSOLUTE MAXIMUM RATINGS (T =25°C, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V 500 V
DSS
Gate-Source Voltage V ±30 V
GSS
Continuous (T=25°C) I 24(Note 2) A
C D
Drain Current
Pulsed (Note 3) I 96 (Note 2) A
DM
Avalanche Current (Note 3) I 24 A
AR
Single Pulsed (Note 4) E 1100 mJ
AS
Avalanche Energy
Repetitive (Note 5) E 29 mJ
AR
Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns
Power Dissipation 290 W
P
D
Derate above 25°C 2.33 W/°C
Junction Temperature T +150 °C
J
Storage Temperature T -55~+150 °C
STG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =3.4mH, I = 24A, V = 50V, R = 25 ?, Starting T = 25°C
AS DD G J
5. I ≤ 24A, di/dt ≤ 200A/μs, V ≤ BV , Starting T = 25°C
SD DD DSS J
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θ 40 °C/W
JA
Junction to Case θ 0.43 °C/W
JC
ELECTRICAL CHARACTERISTICS (T =25°C, unless otherwise specified)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV I =250μA, V=0V 500 V
DSS D GS
Drain-Source Leakage Current I V =500V, V=0V 50μA
DSS DS GS
Forward V =+30V, V=0V +100nA
GS DS
Gate- Source Leakage Current I
GSS
Reverse V =-30V, V=0V -100nA
GS DS
ON CHARACTERISTICS
Gate Threshold Voltage V V =V , I=250μA 2.0 4.0 V
GS(TH) DS GS D
Static Drain-Source On-State Resistance R V =10V, I=12A 0.15 0.24 ?
DS(ON) GS D
DYNAMIC PARAMETERS
Input Capacitance C 3500 4500 pF
ISS
Output Capacitance C V =0V, V =25V, f=1.0MHz 520 670 pF
OSS GS DS
Reverse Transfer Capacitance C 55 70pF
RSS
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6-2
2022.3 Rev.2.0
ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge Q 90 120 nC
G
V =10V, V =400V, I =24A
GS DS D
Gate to Source Charge Q 23 nC
GS
(Note 1, 2)
Gate to Drain Charge Q 52 nC
GD
Turn-ON Delay Time t 80 170 ns
D(ON)
Rise Time t 250 500 ns
R V =250V, I =24A, R =25 ?
DD D G
Turn-OFF Delay Time t (Note 1, 2) 200 400 ns
D(OFF )
Fall-Time t 155 320 ns
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current I 24 A
S
Maximum Body-Diode Pulsed Current I 96 A
SM
Drain-Source Diode Forward Voltage V I =24A, V=0V 1.4V
SD S GS
Body Diode Reverse Recovery Time t 250 ns
rr I =24A, V =0V,
S GS
Body Diode Reverse Recovery Charge Q dI /dt=100A/μs (Note 1) 1.1 μC
RR F
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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6-3
2022.3 Rev.2.0ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
Gate Charge Test Circuit Gate Charge Waveforms
V
GS
Same Type
as DUT
Q
G
12V
10V
200nF
V Q
DS GS Q
GD
50k ?
300nF
V
GS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
V 1 BV
2 DSS
DS
E =
AS LI
AS
2
BV -V
DSS DD
BV
R DSS
G
I
D
I
L AS
10V
I (t)
D
t DUT
P
V
DD V
DD V (t)
DS
Time
t
P
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6-4
2022.3 Rev.2.0ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
R DS
G
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I controlled by pulse period
SD
Gate Pulse Width
V D=
GS
Gate Pulse Period
10V
(Driver)
I , Body Diode Forward Current
FM
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
DD
V
SD
Body Diode Forward
Voltage Drop
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6-5
2022.3 Rev.2.0ASEMI MOSFET
CURRENT 24 Ampere
ASE24N50
VOLTAGE RANG 500 Volts
Drain-Source On-State Resistance
Characteristics
14
V =10V, I =12A
GS D
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5
Drain to Source Voltage, V (V)
DS
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6-6
2022.3 Rev.2.0
Drain Current, I (μA)
D
Drain Current, I (μA)
D |
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