ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? FEATURES
R ≤ 5.0 ? @ V = 10V, I =1.0A
DS(ON) GS D
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
? DESCRIPTION
The 2N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient AC to DC
converters a nd bridge circuits.
? ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3 4 5 6 7 8
2N60L-TA3-T 2N60G-TA3-T TO-220 GDS--- - - Tube
2N60L-TF1-T 2N60G-TF1-T TO-220F1 GDS--- - - Tube
2N60L-TF2-T 2N60G-TF2-T TO-220F2 GDS--- - - Tube
2N60L-TF3-T 2N60G-TF3-T TO-220F GDS--- - - Tube
2N60L-TF3T-T 2N60G-TF3T-T TO-220F3 GDS--- - - Tube
2N60L-TM3-T 2N60G-TM3-T TO-251 GDS--- - - Tube
2N60L-TMA-T 2N60G-TMA-T TO-251L GDS--- - - Tube
2N60L-TMS-T 2N60G-TMS-T TO-251S GDS--- - - Tube
2N60L-TMS2-T 2N60G-TMS2-T TO-251S2GDS--- - - Tube
2N60L-TMS4-T 2N60G-TMS4-T TO-251S4GDS--- - - Tube
2N60L-TN3-R 2N60G-TN3-R TO-252 GDS--- - - Tape Reel
2N60L-TND-R 2N60G-TND-R TO-252D GDS--- - - Tape Reel
2N60L-T2Q-T 2N60G-T2Q-T TO-262 GDS--- - - Tube
2N60L-T60-K 2N60G-T60-K TO-126 GDS--- - - Bulk
2N60L-T6C-K 2N60G-T6C-K TO-126C GDS--- - - Bulk
2N60L-T6S-K 2N60G-T6S-K TO-126S GDS--- - - Tube
2N60L-P5060-R 2N60G-P5060-R PDFN5×6 SSSGDD D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
(1) T: Tube, R: Tape Reel, K:Bulk
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
2N60G-TA3-T
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
(1)Packing Type
TMA: TO-251L, TMS: TO-251S, TMS2: TO-251S2,
TMS4: TO-251S4, TN3: TO-252, TND: TO-252D,
(2)Package Type
T2Q: TO-262, T60: TO-126, T6C:TO-126C,
(3)Green Package
T6S:TO-126S, P5060: PDFN5×6
(3) G: Halogen Free and Lead Free, L: Lead Free
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6-1
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? ABSOLUTE MAXIMUM RATINGS (T = 25° С, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V 600 V
DSS
Gate-Source Voltage V ±30 V
GSS
Avalanche Current (Note 2) I 2.0 A
AR
Continuous I 2.0 A
D
Drain Current
Pulsed (Note 2) I 8.0 A
DM
Single Pulsed (Note 3) E 140 mJ
AS
Avalanche Energy
Repetitive (Note 2) E 4.5 mJ
AR
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220/ TO-262 54 W
TO-220F/TO-220F1
23 W
TO-220F3
TO-220F2 24 W
TO-251/TO-251L
Power Dissipation
P
TO-251S/TO-251S2 D
(T = 25° С)
C 44 W
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
40 W
TO-126S
PDFN5×6 22 W
Junction Temperature T +150 ° С
J
Operating Temperature T -55 ~ +150 ° С
OPR
Storage Temperature T -55 ~ +150 ° С
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T .
J
3. L=64mH, I =2.0A, V =50V, R =25 ?, Starting T = 25°C
AS DD G J
4. I ≤2.4A, di/dt ≤200A/ μs, V ≤ BV , Starting T = 25°C
SD DD DSS J
? THERMAL DATA
PARAMETER PACKAGE SYMBOL RATINGS UNIT
TO-220/TO-220F
TO-220F1/TO-220F2 62.5 ° С/W
TO-220F3/TO-262
TO-251/TO-251L
TO-251S/TO-251S2
100 ° С/W
Junction to Ambient θ
JA
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
89 ° С/W
TO-126S
PDFN5×6 75 (Note) ° С/W
TO-220/TO-262 2.32 ° С/W
TO-220F/TO-220F1
5.5 ° С/W
TO-220F3
TO-220F2 5.43 ° С/W
TO-251/TO-251L
Junction to Case θ
TO-251S/TO-251S2
JC
2.87 ° С/W
TO-251S4/TO-252
TO-252D
TO-126/TO-126C
3.12 ° С/W
TO-126S
PDFN5×6 5.6 (Note) ° С/W
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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6-2
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? ELECTRICAL CHARACTERISTICS (T =25° С, unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV V = 0V, I = 250 μA 600 V
DSS GS D
V = 600V, V = 0V 10 μA
DS GS
Drain-Source Leakage Current I
DSS
V = 480V, T = 125° С 100 μA
DS C
Forward V = 30V, V = 0V 100 nA
GS DS
Gate-Source Leakage Current I
GSS
Reverse V = -30V, V = 0V -100 nA
GS DS
Breakdown Voltage Temperature Coefficient △BV /T △ I =250 μA, Referenced to 25°C 0.4 V/° С
DSS J D
ON CHARACTERISTICS
Gate Threshold Voltage V V = V , I = 250 μA 2.0 4.0V
GS(TH) DS GS D
Static Drain-Source On-State Resistance R V = 10V, I =1.0A 3.6 5 ?
DS(ON) GS D
DYNAMIC CHARACTERISTICS
Input Capacitance C 300 350 pF
ISS
V =25V, V =0V,
DS GS
Output Capacitance C 45 50pF
OSS
f =1MHz
Reverse Transfer Capacitance C 10 13pF
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge Q 40 50 nC
G
V =480V, V =10V,
DS GS
Gate-Source Charge Q 4.2 nC
GS
I =2.4A (Note 1, 2)
D
Gate-Drain Charge Q 8.4 nC
GD
Turn-On Delay Time t 40 60 ns
D (ON)
Turn-On Rise Time t 35 55ns
V =300V, I =2.4A,
R DD D
Turn-Off Delay Time t R =25 ? (Note 1, 2) 90 120ns
D(OFF) G
Turn-Off Fall Time t 50 60ns
F
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current I 2.0 A
S
Pulsed Drain-Source Current I 8.0 A
SM
Drain-Source Diode Forward Voltage V V = 0 V, I = 2.0A 1.4 V
SD GS SD
Reverse Recovery Time t V = 0 V, I = 2.4A, 180 ns
rr GS SD
Reverse Recovery Charge Q di/dt = 100 A/ μs (Note 1) 0.72 μC
rr
Notes: 1. Pulse Test: Pulse width ≤ 300 μs, Duty cycle ≤2%.
2. Essentially independent of operating temperature.
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6-3
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
-
+
I
SD
-
L
R
G
Driver
V
DD
dv/dt controlled by R
G
I controlled by pulse period
Same Type SD
V
GS
D.U.T.-Device Under Test
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
P. W.
V Period
GS
D=
P.W.
(Driver) Period
10V
V =
GS
I , Body Diode Forward Current
FM
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
(D.U.T.) DD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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6-4
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? TEST CIRCUITS AND WAVEFORMS
V
DS
90%
10%
V
GS
t
D(ON) t
D(OFF)
t t
R F
Switching Test Circuit Switching Waveforms
V
GS
Q
G
10V
Q Q
GS GD
Charge
Gate Charge Test Circuit Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
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6-5
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 2 Ampere
2N60
VOLTAGE RANG 600 Volts
? TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Drain Current vs. Gate Threshold Voltage
Breakdown Voltage
300 300
250 250
200 200
150 150
100 100
50 50
0 0
0 200 400 600 800 1000 0 0.513 1.5 2 2.5 3.5 4
Drain-Source Breakdown Voltage, BV (V) Gate Threshold Voltage, V (V)
TH
DSS
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6-6
2018.11 Rev.3.1
Drain Current, I (μA)
D
Drain Current, I (A)
D
Drain Current, I (μA)
D
Continuous Drain-Source Current, I (A)
SD |
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