ASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
? DESCRIPTION
The 3N60 is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
? FEATURES
V = 600V, I = 3A
DS D
R < 3.6 ? @V = 10 V
DS(ON) GS
Ultra low gate charge ( typical 18 nC )
Low reverse transfer capacitance ( C = typical 5.5 pF )
RSS
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
? ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
C
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V 600 V
DSS
Gate-Source Voltage V ±30 V
GSS
Avalanche Current (Note 2) I 3.0 A
AR
Continuous Drain Current I 3.0 A
D
Pulsed Drain Current (Note 2) I 12 A
DM
Single Pulsed (Note 3) E 200 mJ
AS
Avalanche Energy
Repetitive (Note 2) E 7.5 mJ
AR
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 75
TO-220F/TO-220F1
Power Dissipation P 34 W
D
TO-220F3
TO-251/TO-252 50
Junction Temperature T +150 °C
J
Operating Temperature T -55 ~ +150 °C
OPR
Storage Temperature T -55 ~ +150 °C
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T .
J
3. L=44.4mH, I =3A, V =50V, R =25 ?, Starting T = 25°C
AS DD G J
4. I ≤3.0A, di/dt ≤200A/ μs, V ≤ BV , Starting T = 25°C
SD DD DSS J
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6-1
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
? ELECTRICAL CHARACTERISTICS (T =25℃, unless otherwise specified)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAXUNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV V =0 V, I =250 μA 600 V
DSS GS D
Drain-Source Leakage Current I V =600 V, V =0 V 10 μA
DSS DS GS
Forward V =30 V, V =0 V 100 nA
GS DS
Gate-Source Leakage Current I
GSS
Reverse V =-30 V, V =0 V -100 nA
GS DS
Breakdown Voltage Temperature
△BV /△T
DSS J I =250 μA, Referenced to 25°C 0.6 V/ ℃
D
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage V V =V , I =250 μA 2.0 4.0V
GS(TH) DS GS D
Static Drain-Source On-State Resistance R V =10 V, I=1.5A 2.8 3.6 ?
DS(ON) GS D
DYNAMIC CHARACTERISTICS
Input Capacitance C 350 450 pF
ISS
Output Capacitance C V =25V, V =0V, f=1MHz 50 65pF
OSS DS GS
Reverse Transfer Capacitance C 5.5 7.5pF
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time t 35 50 ns
D(ON)
Turn-On Rise Time t 60 70ns
V =30V, I =0.5A, R =25 ?
R DD D G
Turn-Off Delay Time t (Note 1, 2) 100 150ns
D(OFF)
Turn-Off Fall Time t 65 75ns
F
Total Gate Charge Q 18.5 23 nC
G
V =50V, I =1.3A, I =100 μA
DS D G
Gate-Source Charge Q 5.2 nC
GS
V =10V (Note 1, 2)
GS
Gate-Drain Charge Q 4.9 nC
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage V V =0 V, I=3.0A 1.4V
SD GS S
Maximum Continuous Drain-Source Diode
I 3.0 A
S
Forward Current
Maximum Pulsed Drain-Source Diode
I 12 A
SM
Forward Current
Reverse Recovery Time t V =0V, I =3.0A, 210 ns
RR GS S
dI /dt = 100 A/ μs (Note 1)
Reverse Recovery Charge Q F 1.2 μC
RR
Notes: 1. Pulse Test: Pulse width ≤ 300 μs, Duty cycle ≤2%.
2. Essentially independent of operating temperature.
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6-2
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
? TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
V
DS
-
+
-
L
R
G
Driver
V
DD
dv/dt controlled by R
G
I controlled by pulse period
Same Type SD
V
GS
D.U.T.-Device Under Test
as D.U.T.
P. W.
V Period
GS
D=
P.W. Period
(Driver)
10V
V =
GS
I , Body Diode Forward Current
FM
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
(D.U.T.)
DD
Body Diode Forward Voltage Drop
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6-3
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
Peak Diode Recovery dv/dt Waveforms
? TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit Switching Waveforms
Same Type
as D.U.T.
50kΩ
Q
G
12V
10V
0.2μF 0.3μF
V
DS
Q Q
GS GD
V
GS
DUT
V
GS
3mA
Charge
Gate Charge Test Circuit Gate Charge Waveform
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
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6-4
2018.11 Rev.3.1ASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
? TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
On State Current vs.
Drain Current and Gate Voltage
Allowable Case Temperature
6
10
5
V =20V
4 GS
V =10V
GS
3
1
2
Notes:
1
1. V =0V
GS
Note: T =25℃
J 2. 250μs Test
0.1
0
0 246 8 10 12 0.2 0.4 0.6
0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, V (V)
Drain Current, I (A) SD
D
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6-5
2018.11 Rev.3.1
Drain-Source On-Resistance,
R ( ?)
DS(ON)
Reverse Drain Current, I (A)
DRASEMI MOSFET
CURRENT 3 Ampere
3N60
VOLTAGE RANG 600 Volts
? TYPICAL CHARACTERISTICS(Cont.)
Maximum Drain Current vs. Case
Transient Thermal Response Curve
Temperature
3.0
1
2.5
D=0.5
2.0
0.2
0.1
1.5
0.1
0.05
0.02
1.0
0.01
Notes:
1. θ (t) = 1.18 /W Max.
JC
0.5
Single Pulse
2. Duty Factor, D=t1/t2
0.01 3. T -T =P × θ (t)
JM C DM JC
0
-5
-4 -3 -2 -1 0 1
10
10 10 10 10 10 10 25 50 75 100 125 150
Square Wave Pulse Duration, t (sec) Case Temperature, T (°C)
1 C
Safe Operating Area – 600V
Operation in This Area is Limited by R
DS(on)
1
10
100μs
1ms
10ms
0
10
DC
Notes:
-1
1. T =25
10 J
2. T =150
J
3. Single Pulse
-2
10
600
0 1 2 3
10 10 10 10
Drain-Source Voltage, V (V)
DS
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6-6
2018.11 Rev.3.1
Drain-Source Breakdown Voltage, BV
DSS
(Normalized)
Drain-Source On-Resistance, R
DS(ON)
(Normalized) |
|
