ASE4N60
600V N-Channel MOSFET
TO-220F
ASE4N60
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
D(2)
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=14nC (Typ.).
□ BVDSS=600 V,I =4A
D
1.Gate (G)
□ R (on) : 2.50? (Max) @V =10V
DS G
2.Drain (D)
G(1)
□ 100% Avalanche Tested
3.Source (S)
S(3)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Sy mbol Parameter Value Unit
V Drain-Source Voltage 600 V
DSS
T =25℃ 4.0
j
I Drain Current A
D
T =100℃ 2.7
j
V 30 V
GSS Gate - Source voltage
E Single Pulse Avalanche Energy (note1) 120 mJ
AS
I Avalanche Current (note2) 4.0 A
AR
P Power Dissipation (Tj=25 ℃ ) 50 W
D
T Junction T 150 ℃
emperature(Max)
j
℃
T Storage Temperature -55~+150
stg
Maximum lead temperature for soldering purpose,1/8’from
TL 300 ℃
case for 5 seconds
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
2.4
R Thermal Resistance,Junction to Case -
θJC ℃/W
R Thermal Resistance,Junction to Ambient 62.5
θJA ℃/W
www.asemi99.com
1-7
2022.3 Rev.2.0ASE4N60
600V N-Channel MOSFET
Electrical Characteristics (Ta=25℃ unless otherwise noted)
Symbol Parameter Test Condition Min. Typ. Max. Unit
Off Chara cteristics
BV Drain-Source Breakdown Voltage I =250 μA，V =0 600 - - V
DSS D GS
Breakdown Voltage Temperature I =250 μ A ,Reference
D
△ △
BVDSS/ TJ - 0.67 - V/ ℃
Coef?cient to 25 ℃
V =650V, V =0V - - 10
DS GS
I Zero Gate Voltage Drain Current μA
DSS
V =520V, Tj=125℃ 100
DS
Gate-body leakage Current,
I V =+30V, V =0V - - 100
GSSF GS DS
Forward
nA
Gate-body leakage Current,
I V =-30V, V =0V - - -100
GSSR GS DS
Reverse
On Characteristics
V Date Threshold Voltage I =250 μA,V =V 2 - 4 V
GS(TH) D DS GS
Static Drain-Source
R I =2.0A,V =10V - 2.5 ?
DS(ON) D GS
On-Resistance
Dynamic Characteristics
Ciss Input Capacitance - 560 -
V =25V，V =0，
DS GS
Coss Output Capacitance - 48 - pF
f=1.0MHz
Crss Reverse Transfer Capacitance - 5.4 -
Sw itching Characteristics
Td(on) - 25
Tu rn-On Delay Time
Tr - 45
T u r n - O n Ri s e T i m e
V =325V，I =4A
DD D
nS
R =25? (Note 3,4)
Td(off) Turn-Off Delay Time G - 25
Tf Turn-Off Rise Time - 35
Qg Total Gate Charge - 14 . 3
V =520V,V =10V，
DS GS
Qgs Gate-Source Charge - 2.8 - nC
I =4A (Note 3,4)
D
Qgd Gate-Drain Charge - 4.5 -
Drain-Source Diode Characteristics and Maximum Ratings
Is Max. Diode Forward Current - - - 4
A
I Max. Pulsed Forward Current - - - 16
SM
V Diode Forward Voltage I =4A - - 1.4 V
SD D
I =4A,V =0V
S GS
Trr Reverse Recovery Time - 393 - nS
μ s
diF/dt=100A/
Qrr Reverse Recovery Charge - 1.5 - μC
(Note3)
Notes : 1, L=0.5mH, IAS= 4A, VDD=50V, RG=25? , Starting TJ =25℃
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
www.asemi99.com
2-7
2022.3 Rev.2.0ASE4N60
600V N-Channel MOSFET
Typical Characteristics
Breakdown Voltage Variation
On-Resistance Junction
VS. Temperayure Temperature
3.0
1.2
2.5
1.1
2.0
1.5
1.0
1.0
0.9
0.5
0.8
0.0
-100 -50 0 50 100 150 200 250
-100 -50 0 50 100 150 200
Junction Temperture,Tj(℃)
Junction Temperature,Tj(℃)
Maximum Drain Current
Maximum Safe Operating Area
VS.Case Temperature
2
10
5
4
1
10
μs
100
1ms
3
10ms
2
0
DC
10
1
-1
10
0
0
1 2 3
25 50 75 100 125 150 10 10 10 10
Drain-Source Voltage,VDS(V)
Case Temperature,TC(℃)
On-State Characteristics Transfer Characteristics
10
10
1
150℃ 25℃
1
0.1
0.1
2 4 8 10
1 100 6
0.1 10
www.asemi99.com
3-7
2022.3 Rev.2.0
Drain-Source On-Resistance
RDS(ON),(Normalized)( )
Drain Current,ID (A)
Drain-Source Breakdown Voltage,
BVDSS(Normalized) (V)
Drain Current,ID(A)
Ω
Drain Current,ID(A)
Drain Current,ID(A)ASE4N60
600V N-Channel MOSFET
Typical Characteristics (Continued)
On-Resistance Variation vs. Capacitance Characteristics
Drain Currentand Gate Voltage (Non-Repetitive)
6
1200
5
CISS
1000
VGS=10V
4
800
3
600
VGS=20V
COSS
2
400
1
200
CRSS
0
0
10
0.1 1
0 2 4 6 8 10 12
Drain-Source Voltage,VDS(V)
Drain Current, ID(A)
Body Diode Forward Voltage Variation
With Source Current and Temperature
Gate Charge Characteristics
12
10
10
VDS=300V
8
VDS=480V
150℃
25℃
6 1
VDS=120V
4
2
0
0.1
0 5 10 15 20 25
0.6 0.8 1.0
0.2 0.4
Total Gate Charge ,Qg(nC)
Source-Drain Voltage,VSD(V)
Transient Thermal Response Curve
0
10
-1
10
-2
10
-4 -1 0
-5 -3 -2 1
10 10 10 10 10 10 10
www.asemi99.com
4-7
2022.3 Rev.2.0
( )
Ω
Gate-Source Voltage ,VGS( V )
Capacitance(pF)
Reverse Drain Current,IDR(A)
nse ,
Thermal Respo θ jc( t )
Drain-Source On-Resistance
, RDS(ON)ASE4N60
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
RD
VDD
VGS
90%
VGS
RG
10%
VDD
10V
VGS
D.U.T.
tR
tF
to(ON) to(OFF)
Switching Test Circuit Switching Waveforms
Same Type
as D.U.T.
50KΩ
VGS
12V
QG
0.2μF 0.3μF
VDS
10V
QGS QGS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
L
BVDSS
VDS
IAS
RD
VDD
10V
VDS(t)
VDD
D.U.T.
tp
tp Time
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
www.asemi99.com
5-7
2022.3 Rev.2.0ASE4N60
600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveform
D.U.T
+
VDS
_
+
L
_
RG
Driver
VDD
dv/dt controlled by RG
Same Type
ISD controlled pulse period
VGS
as D.U.T
D.U.T.-Device Under Test
Peak Diode Recovery Test Circuit
Period
P.W.
VGS
D=
(Driver) Period
P.W.
VGS=10V
IFM,Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
VDS
(D.U.T.)
Body Diode Recovery dv/dt
VDD
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
www.asemi99.com
6-7
2022.3 Rev.2.0ASE4N60
600V N-Channel MOSFET
Package Dimension
TO-220F
Unit: mm
www.asemi99.com
7-7
2022.3 Rev.2.0 |
|
