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关于NAND flash的几个缩写

                                      

SLC:Single-Level Cell

MLC:Multi-Level Cell

SB:Small Block=(512+16)Bytes/page

LB:Large Block=(2048+64)Bytes/page

DDP:Double Die Package

QDP:Quadruple Die Package

DSP:Double Stack Package

1P,2P,4P:Plane Plane 与CE无关

for example:SAMSUNG MLC---K9G4G08U0M为Normal MLC,K9L8G08U0M(DDP) is composed of two K9G4G08U0Ms,即DDP,有4Plane,1个CE,1个R/B,每个Plane由1024个Block和(2048+64)Byte page registers组成,一个Block有128个Page,每个Page有(2048+64)Byte,所以总容量为4*[1024*128*(2048+64)Byte+(2048+64)Byte]=8Gbit+256Mbit,MLC按page read & write(program),按block erase,Page寄存器大小与每个page的大小相同便于同步program.

  K9L8G08U0M虽然由2个K9G4G08U0M die封装而成,但仅有一个CE和一个R/B,其控制chip #1 or #2读写是由内部的R/B(#1),R/B(#2)信号来实现,Interleaving(交叉存取)过程中,Host通过发送F1h来询问chip #1的状态,发送F2h来询问chip #2的状态.

K9L8G08U0M(DDP) is composed of two K9G4G08U0Ms chips

K9HAG08U1M(QDP) is composed of two  K9L8G08U0M chips which are selected separately by each ~CE1 and ~CE2,R/B1 and R/B2

K9MBG08U5M (DSP) is composed of four  K9L8G08U0M chips which are selected separately by each ~CE1 ~CE2  ~CE3 ~CE4 ,R/B1 R/B2 R/B3 R/B4