代理
Fairchild 5N12OBND HGTG5N120BND HGTP5N120BND 21A 1200V NPT系列超高速N沟道IGBT反并联二极管
HGTG5N12OBND和HGTP5N120BND是NPT系列IGBT的设计。IGBT 5N120BND结合MOSFET和双极型晶体管的最佳功能。5N12OBND含一个MOSFET的高输入阻抗和一个低通态传导损耗双极型晶体管。使用该IGBT是开发型TA49308。所使用的二极管是开发型TA49058（编号RHRD6120）。
IGBT 5N12OBND非常适合在中等频率在低传导损耗是必不可少的，如经营许多高电压开关应用：AC和DC马达控制，电源和螺线管驱动器，继电器和接触。
HGTG5N120BND HGTP5N120BND IGBT单管参数说明：（绝对最大额定值）：
|
Parameter |
Symbol |
5N120BND
HGTG5N120BND
HGTP5N120BND |
Units |
|
Collector to Emitter Voltage |
BVCES |
1200 |
V |
|
Collector Current Continuous
At TC = 25oC
At TC = 110oC |
IC25
IC110 |
21
10 |
A
A |
|
Collector Current Pulsed |
ICM |
40 |
A |
|
Gate to Emitter Voltage Continuous |
VGES |
±20 |
V |
|
Gate to Emitter Voltage Pulsed |
VGEM |
±30 |
V |
|
Switching Safe Operating Area at TJ = 150oC |
SSOA |
30A at 1200V |
V |
|
Power Dissipation Total at TC = 25oC |
PD |
167 |
W |
|
Power Dissipation Derating TC > 25oC |
|
1.33 |
W/oC |
|
Operating and Storage Junction Temperature Range |
TJ, TSTG |
-55 to 150 |
oC |
|
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s.
Package Body for 10s, see Tech Brief 334 |
TL
Tpkg |
300 |
oC |
|
Short Circuit Withstand Time at VGE= 15V |
tSC |
8 |
US |
|
Short Circuit Withstand Time at VGE= 12V |
tSC |
15 |
US |
HGTG5N120BND HGTP5N120BND产品特点：
·21A，1200V，TC=250℃
·1200V开关SOA能力
·下降时间(Tj=1500C):175ns
·短路额定值
·低传导损耗
·5N120BND封装：
HGTG5N120BND封装：TO-247
HGTP5N120BND封装：TO-220AB
5N120BND引脚说明：
