NCE40P13S Datasheet(数据表)(1/7 Pages) NCEPOWER | NCE...

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NCE40P13S

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NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE40P13S uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

VDS =-40V,ID =-13A

RDS(ON) <15mΩ @ VGS=-10V

RDS(ON) <18mΩ @ VGS=-4.5V

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Excellent package for good heat dissipation

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

DC-DC converter

Schematic diagram

Marking and pin assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

40P13

NCE40P13S

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-40

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-13

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

-9

A

Pulsed Drain Current

IDM

50

A

Maximum Power Dissipation

PD

2.5

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance ,Junction-to-Ambient(Note 2)

RθJA

50

/W

℃

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Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-40

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-40V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.3

-2

-2.5

V

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-12A

-

12

15

mΩ

Forward Transconductance

gFS

VDS=-15V,ID=-10A

35

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

-

2800

-

PF

Output Capacitance

Coss

-

320

-

PF

Reverse Transfer Capacitance

Crss

VDS=-20V,VGS=0V,

F=1.0MHz

-

220

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

-

11

-

nS

Turn-on Rise Time

tr

-

75

-

nS

Turn-Off Delay Time

td(off)

-

89

-

nS

Turn-Off Fall Time

tf

VDD=-20V, ,RL=2Ω

VGS=-10V,RGEN=6Ω

-

35

-

nS

Total Gate Charge

Qg

-

40

-

nC

Gate-Source Charge

Qgs

-

6

-

nC

Gate-Drain Charge

Qgd

VDS=-20V,ID=-12A,

VGS=-10V

-

12

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-12A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

-13

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production

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Test Circuit

1) EAS Test Circuit

2) Gate Charge Test Circuit

3) Switch Time Test Circuit

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Typical Electrical and Thermal Characteristics (Curves)

-Vds Drain-Source Voltage (V)

Figure 1 Output Characteristics

-Vgs Gate-Source Voltage (V)

Figure 2 Transfer Characteristics

.

-ID- Drain Current (A)

Figure 3 Rdson- Drain Current

TJ-Junction Temperature(℃)

Figure 4 Rdson-Junction Temperature

Qg Gate Charge (nC)

Figure 5 Gate Charge

Vsd Source-Drain Voltage (V)

Figure 6 Source- Drain Diode Forward

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Vds Drain-Source Voltage (V)

Figure 7 Capacitance vs Vds

Vds Drain-Source Voltage (V)

Figure 8 Safe Operation Area

TJ-Junction Temperature (℃)

Figure 9 BVDSS vs Junction Temperature

TJ-Junction Temperature(℃)

Figure 10 VGS(th) vs Junction Temperature

Square Wave Pluse Duration(sec)

Figure 11 Normalized Maximum Transient Thermal Impedance