9、Common CMOS flow summary（FEOL）

1、Shallow Trench Formation

1.1 Grow initial Ox, deposit Nit；

1.2 Litho, etch Nit and Ox, PR removal, Si etch, liner-Ox；

1.3 HDP fill, RTA, CMP, Nit and Ox removal, Sac-OX.

Figure 1.1

Figure 1.2

Figure 1.3

2、N-well and P-well formation

2.1 Litho（P-well）, P-well implant, PR removal;

2.1 Litho（N-well）, N-well implant, PR removal, RTA.

Figure 2.1

Figure 2.2

3、Gate stack formation

3.1 pre-ox clean, Gate-ox-1;

3.2 Mask （Core open）, HF dip, PR clean;

3.3 Gate-ox-2;

3.4 Poly depositon, doping, SiON, PEOX;

3.5 Mask（poly）, HM etch, PR removal, Poly etch;

3.6 SiON removal; poly ReOX.

Figure 3.1

Figure 3.2

4、Offset spacer formation

4.1 Spacer （SiN）deposition and etch.

Figure 4.1

5、nLDD and pLDD

5.1 Litho（nLDD）, implants（nLDD）;

5.2 Litho （pLDD）, implants（pLDD）,spike.

Figure 5.1

Figure 5.2

6、Spacer formation

6.1 TEOS, SiN, composite, spacer etch.

Figure 6.1

7、Source/Drain formation

7.1 Litho（n ）, n implant;

7.2 Litho（p ）, p implant, spike.

Figure 7.1

Figure 7.2